IXGH 28N120BD1 Search Results

IXGH 28N120BD1 Price and Stock

Filter by Manufacturer


IXYS Corporation IXGH28N120BD1 IGBT PT 1200V 50A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH28N120BD1	Tube			30	1 - 10 - 100 $8.41267 1000 $8.41267 10000 $8.41267	Buy Now

IXGH 28N120BD1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH28N120BD1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 250W TO247		Original	PDF
IXGH 28N120BD1		IXYS	High Voltage IGBT with Diode		Original	PDF
IXGH28N120BD1		IXYS	IGBT Discretes		Original	PDF

IXGH 28N120BD1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGH 28N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1	PDF
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)	PDF
IXGH 28N120BD1 Abstract: igbt induction cooker 28N120 Contextual Info: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES	Original	28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120	PDF
igbt induction cooker Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker	PDF
IXGH 28N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1	PDF
Contextual Info: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	28N120B IC110 O-268 O-247	PDF
28N120 Contextual Info: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	28N120B IC110 O-268 O-247 28N120	PDF