IXGH 10V Search Results

IXGH 10V Result Highlights (5)

Part	Manufacturer	Description
TK2R4A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TK2R4E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00244 Ohm@10V, TO-220AB

IXGH 10V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
50n60 Abstract: 50N50B IXGH50N50B IXGH50N60B Contextual Info: a ix Y S HiPerFAST IGBT v IXGH/IXGT 50N50B IXGH/IXGT 50N60B CES ; t C 25 500 V : 75 A 600 V : 75 A V C E sa t i t ii 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol < > Maximum Ratings Test C onditions TO-247 AD (IXGH) 50N50 ¡ 50N60 VCES T, = 25QC to150cC	OCR Scan	50N50B 50N60B 50N50 50N60 O-247 to150cC O-268 50n60 IXGH50N50B IXGH50N60B	PDF
IXGH 32N90B2D1 Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2 Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES	Original	32N90B2D1 O-247 IC110 IXGH 32N90B2D1 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2	PDF
Contextual Info: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200	Original	40N120A2 IC110	PDF
IXGH12N100AU1 Abstract: IXGH12N100U1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1 IXGH12N100AU1 IXGH12N100U1	PDF
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1	PDF
Contextual Info: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	16N170A 16N170AH1 W1700	PDF
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1	PDF
40N120A Abstract: IXGT 40N120A2 a 3150 40n120 40N120A2 Contextual Info: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200	Original	40N120A2 IC110 O-247 40N120A IXGT 40N120A2 a 3150 40n120 40N120A2	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	32N60B 32N60BD1 O-247 O-268	PDF
Contextual Info: v Low VCE sst High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A « Symbol Test Conditions vCES Tj = 25°C to 150°C 1000 V V cG R ^ 1000 V V GES Maximum Ratings = 25°C to 150°C; RGE = 1 Mi2 v Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C 50 A ^C90	OCR Scan	N100A O-247 T0-204 4bflb22b 25N100 25N100A	PDF
32N60BU1 Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C	OCR Scan	32N60BU1 32N60BU1S O-247 B2-77 B2-78	PDF
16N170AH1 Abstract: 16N170A IXGT16N170A IXGH16N170AH1 Contextual Info: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	16N170A 16N170AH1 16N170AH1 16N170A IXGT16N170A IXGH16N170AH1	PDF
50n60b Abstract: 50n60 50N6 IXGH50N60B Contextual Info: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50N60B O-247 O-247AD 728B1 50n60b 50n60 50N6 IXGH50N60B	PDF
32N60B Abstract: 32n60 32N60BD1 D25VF IXGH32N60B Contextual Info: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	32N60B 32N60BD1 O-247 O-268 32N60B 32n60 32N60BD1 D25VF IXGH32N60B	PDF

Contextual Info: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50N60B O-247 728B1	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	32N60B 32N60BD1 O-247 O-268	PDF
transistor ixgh 25N100 Abstract: .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550 Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25	Original	N100A O-204 O-247 25N100g2 transistor ixgh 25N100 .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550	PDF
50n50c Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60 Contextual Info: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60	PDF
G20N60 Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247 Contextual Info: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48	Original	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247	PDF
IXGH17N100 Abstract: C5250 Contextual Info: DIXYS IGBT L0W CES IXGH 17N100 IXGH 17N100A V CE sat, High speed Symbol Test Conditions V *C E S Tj = 25°Cto 150°C VCGR T,J = 25°C to 150°C; VGES 1000 V 1000 V Maximum Ratings 1000 V 1000 V Continuous ±20 V VGEM Transient ±30 V ^C25 Tc =25°C 34 A C90	OCR Scan	17N100 17N100A O-247AD 17N100A 17N100U1 IXGH17N100 C5250	PDF
50N60 Abstract: G 50N60 IXGH50N50B Contextual Info: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n	OCR Scan	50N50B 50N60B 50N50 50N60 O-247 G 50N60 IXGH50N50B	PDF
IXGH32N60B Contextual Info: HiPerFAST IGBT IXGH 32N60B IXGH 32N60BS vCES ^C25 v* CE sat = = = = 600 V 60 A 2.5 V 80 ns ÒE Maximum Ratings Symbol Test Conditions VCEs T j = 2 5 °C to 1 5 0 °C 600 V VCOR v GES T, = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V v GEM Transient	OCR Scan	32N60B 32N60BS B2-73 IXGH32N60B	PDF
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	N100U1 N100AU1 17N100U1 17N100AU1	PDF
10N100U1 Abstract: RG150 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	N100U1 N100AU1 10N100U1 10N100AU1 10N100U1 RG150	PDF

IXGH 10V Search Results

IXGH 10V Result Highlights (5)

IXGH 10V Datasheets Context Search

50n60

IXGH 32N90B2D1

IXGH12N100AU1

40N120A

32N60BU1

16N170AH1

50n60b

32N60B

transistor ixgh 25N100

50n50c

G20N60

IXGH17N100

50N60

IXGH32N60B

10N100U1