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    IXFT26N60P Search Results

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    IXFT26N60P Price and Stock

    Littelfuse Inc IXFT26N60P

    MOSFET N-CH 600V 26A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT26N60P Tube 300
    • 1 -
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    • 1000 $5.44573
    • 10000 $5.44573
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    Newark IXFT26N60P Bulk 300
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    • 100 -
    • 1000 $5.71
    • 10000 $5.71
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    RS IXFT26N60P Bulk 8 Weeks 30
    • 1 -
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    • 100 $8.42
    • 1000 $8.42
    • 10000 $8.42
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    IXYS Corporation IXFT26N60P

    MOSFETs 600V 26A
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    Mouser Electronics IXFT26N60P
    • 1 -
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    • 1000 $7.05
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    Future Electronics IXFT26N60P Tube 26 Weeks 300
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    • 100 $5.8
    • 1000 $5.8
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    TTI IXFT26N60P Tube 300
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    • 1000 $5.65
    • 10000 $5.65
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    TME IXFT26N60P 1
    • 1 $8.34
    • 10 $6.64
    • 100 $5.96
    • 1000 $5.96
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    IXYS Integrated Circuits Division IXFT26N60P

    MOSFET DIS.26A 600V N-CH TO268(D3PAK) HIPERFET SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFT26N60P
    • 1 $9.70794
    • 10 $9.70794
    • 100 $8.8254
    • 1000 $8.8254
    • 10000 $8.8254
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    IXFT26N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT26N60P IXYS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Original PDF

    IXFT26N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFH26N60P

    Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS O-247) 26N60P 26N60P 26N60PS O-247 IXFH26N60P IXFV26N60P 26n60 26N60PS IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS 26N60P 26N60P 26N60PS O-247 PLUS220SMD