IXFR24N50Q Search Results

IXFR24N50Q Price and Stock

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IXYS Corporation IXFR24N50Q MOSFET N-CH 500V 22A ISOPLUS247
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DigiKey	IXFR24N50Q	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Integrated Circuits Division IXFR24N50Q MOSFET DIS.22A 500V N-CH ISOPLUS247 HIPERFET THT
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Ozdisan Elektronik	IXFR24N50Q					1 $7.91582 10 $7.91582 100 $7.1962 1000 $7.1962 10000 $7.1962	Get Quote

IXFR24N50Q Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR24N50Q		IXYS	500V HiPerFET power MOSFET		Original	PDF
IXFR24N50Q		IXYS	HiPerFET Power MOSFETs ISOPLUS247		Scan	PDF

IXFR24N50Q Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
26N50Q Abstract: IXFH26N50Q 24N50Q Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol	Original	PDF	ISOPLUS247TM 26N50Q 24N50Q 24N50Q IXFR26N50Q IXFH26N50Q
26N50Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM VDSS ID25 RDS on 0.20 W 0.23 W 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol	Original	PDF	26N50Q ISOPLUS247TM 24N50Q 24N50Q IXFR26N50Q
26n50q Abstract: ixfh26n50q IXFR26N50Q IXFR24N50Q 24n50q Text: HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q Electrically Isolated Back Surface VDSS ID25 500 V 24 A 500 V 22 A trr ≤ 250 ns RDS(on) 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions	Original	PDF	26N50Q ISOPLUS247TM 24N50Q 247TM E153432 IXFR26N50Q IXFR24N50Q IXFH26N50Q 26n50q IXFR26N50Q IXFR24N50Q 24n50q
24n50 Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250 Text: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family	OCR Scan	PDF	ISOPLUS247â 26N50Q 24N50Q 26N50 24N50 IXFR26N50Q IXFH26N50Q A24N50 .24n50 ISOPLUS247 IXFR24N50Q SST250
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	PDF	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50