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    IXFN 60N80P Search Results

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    IXFN 60N80P Price and Stock

    Littelfuse Inc IXFN60N80P

    MOSFET N-CH 800V 53A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN60N80P Tube 371 1
    • 1 $45.07
    • 10 $33.873
    • 100 $45.07
    • 1000 $45.07
    • 10000 $45.07
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    RS IXFN60N80P Bulk 8 Weeks 10
    • 1 -
    • 10 $48.53
    • 100 $48.53
    • 1000 $48.53
    • 10000 $48.53
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    IXYS Corporation IXFN60N80P

    MOSFET Modules DIODE Id54 BVdass800
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN60N80P 1,168
    • 1 $43.12
    • 10 $37.24
    • 100 $35.22
    • 1000 $33.69
    • 10000 $33.69
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    Verical IXFN60N80P 281 1
    • 1 $76.7794
    • 10 $56.8904
    • 100 $56.8904
    • 1000 $56.8904
    • 10000 $56.8904
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    Newark IXFN60N80P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $32.89
    • 10000 $32.89
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    TTI IXFN60N80P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $31.74
    • 10000 $31.74
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    TME IXFN60N80P 294 1
    • 1 $58.17
    • 10 $46.27
    • 100 $46.27
    • 1000 $46.27
    • 10000 $46.27
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    New Advantage Corporation IXFN60N80P 10 1
    • 1 -
    • 10 $71.78
    • 100 $71.78
    • 1000 $71.78
    • 10000 $71.78
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    IXFN 60N80P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN60N80P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 800V 53A SOT-227B Original PDF

    IXFN 60N80P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXFN 60N80P

    Abstract: ixfn60n80p 60N80 60N80P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		60N80P IXFN 60N80P ixfn60n80p 60N80 60N80P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		60N80P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF