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IXFH52N30P Price and Stock

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Littelfuse Inc IXFH52N30P MOSFET N-CH 300V 52A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH52N30P	Tube	550		1	1 $7.61 10 $7.61 100 $4.70767 1000 $3.90851 10000 $3.90851	Buy Now
RS	IXFH52N30P	Bulk		8 Weeks	30	1 - 10 - 100 $6.05 1000 $6.05 10000 $6.05	Get Quote
IXYS Corporation IXFH52N30P MOSFETs 52 Amps 300V 0.066 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH52N30P		486			1 $7.62 10 $7.62 100 $6.01 1000 $5.37 10000 $5.37	Buy Now
Newark	IXFH52N30P	Bulk	285		1	1 $7.82 10 $7.29 100 $6.24 1000 $5.58 10000 $5.58	Buy Now
Future Electronics	IXFH52N30P	Tube		40 Weeks	300	1 - 10 - 100 $4.12 1000 $3.84 10000 $3.84	Buy Now
Bristol Electronics	IXFH52N30P		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXFH52N30P		24			1 $13.689 10 $12.168 100 $11.2554 1000 $11.2554 10000 $11.2554	Buy Now

TTI	IXFH52N30P	Tube			300	1 - 10 - 100 - 1000 $3.91 10000 $3.91	Buy Now
TME	IXFH52N30P		292		1	1 $6.91 10 $5.84 100 $5.42 1000 $4.39 10000 $4.14	Buy Now
Chip 1 Exchange	IXFH52N30P		1,345			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IXFH52N30P		774		1	1 - 10 - 100 $8.79 1000 $8.2 10000 $8.2	Buy Now
IXYS Integrated Circuits Division IXFH52N30P MOSFET DIS.52A 300V N-CH TO-247AD HIPERFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFH52N30P		974			1 $6.77402 10 $6.77402 100 $6.1582 1000 $6.1582 10000 $6.1582	Buy Now

IXFH52N30P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH52N30P		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS		Original	PDF

IXFH52N30P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = =   RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A  73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 IXFH52N30P 52N30P
52N30P Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30 Text: IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXFH52N30P IXFT52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings	Original	PDF	IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV52N30P IXFV52N30PS IXFH52N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF