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    ITS35C12

    Abstract: ITS35C12T T0264
    Text: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF ITS35C12 DS4754 ITS35C12 ITS35C12T T0264

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4754-2.1 ITS35C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4754-2 ITS35C12 ITS35C12

    T0-264

    Abstract: ITS35C12T
    Text: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS35C12 DS4754 ITS35C12 T0-264 ITS35C12T