ITR08386 Search Results

2SC536E

Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

Contextual Info: 2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage

Contextual Info: 2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage

2SC536E

Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

Contextual Info: Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE sat , NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage

2SD808

Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter