ITH23C06 Search Results

Contextual Info: ITH23C06 MITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5046-1.1 October 1998 T h e IT H 2 3 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r

ITH23C06P

Abstract: T0247
Contextual Info: ITH23C06 MITEL SEM ICON D UCTOR High Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes O ctober 1998, version DS5046-1.1 DS5046-2.0 April 1999 The ITH23C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for