IT1172
Abstract: No abstract text available
Text: BFL4036 Ordering number : ENA1830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4036 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.4Ω (typ.) Input capacitance Ciss=1000pF (typ.) 10V drive Specifications
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BFL4036
ENA1830
1000pF
A1830-5/5
IT1172
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Untitled
Abstract: No abstract text available
Text: 2SK4124 Ordering number : ENA0746A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.
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2SK4124
ENA0746A
A0746-5/5
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Untitled
Abstract: No abstract text available
Text: 2SK4125 Ordering number : ENA0747A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4125 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.
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2SK4125
ENA0747A
A0747-5/5
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FL4037
Abstract: No abstract text available
Text: BFL4037 Ordering number : ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4037 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications
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BFL4037
ENA1831
1200pF
A1831-5/5
FL4037
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K4089
Abstract: 2SK4089LS
Text: 2SK4089LS Ordering number : ENA0557 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4089LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .
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2SK4089LS
ENA0557
A0557-5/5
K4089
2SK4089LS
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3LP04MH
Abstract: No abstract text available
Text: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
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3LP04MH
ENA0551
900mm2
A0551-4/4
3LP04MH
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K4124
Abstract: 2SK4124 IT12247
Text: 2SK4124 Ordering number : ENA0746 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.
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2SK4124
ENA0746
A0746-5/5
K4124
2SK4124
IT12247
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a1216 transistor
Abstract: a1216 marking xa
Text: MCH6649 Ordering number : ENA1216 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6649 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6649
ENA1216
PW10s,
900mm
A1216-4/4
a1216 transistor
a1216
marking xa
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Untitled
Abstract: No abstract text available
Text: 3LN04CH Ordering number : ENA1193 N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC
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3LN04CH
ENA1193
900mm2â
3LN04CH/D
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a12124
Abstract: 3lp04ch
Text: 3LP04CH Ordering number : ENA1212 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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3LP04CH
ENA1212
PW10s,
900mm20
A1212-4/4
a12124
3lp04ch
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3lp04ss
Abstract: A12144
Text: 3LP04SS Ordering number : ENA1214 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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3LP04SS
ENA1214
PW10s,
145mm80mm1
A1214-4/4
3lp04ss
A12144
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K4124
Abstract: No abstract text available
Text: 2SK4124 Ordering number : ENA0746C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching Adoption of high reliability HVP process
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ENA0746C
2SK4124
PW10s,
A0746-7/7
K4124
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3LN04MH
Abstract: sy 360 diode
Text: 3LN04MH Ordering number : ENA0550 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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3LN04MH
ENA0550
900mm2
A0550-4/4
3LN04MH
sy 360 diode
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1830A BFL4036 N-Channel Power MOSFET http://onsemi.com 500V, 14A, 0.52Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.4Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1830A
BFL4036
O-220F-3FS
1000pF
PW10s,
A1830-6/6
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K4125
Abstract: 2SK4125 IT11755
Text: 2SK4125 注文コード No. N A 0 7 4 7 A 三洋半導体データシート 半導体データシート No.NA0747 をさしかえてください。 2SK4125 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
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2SK4125
NA0747
K4125
IT12416
IT12239
PW10s
IT12240
IT12241
IT10478
K4125
2SK4125
IT11755
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Untitled
Abstract: No abstract text available
Text: 2SK4089LS Ordering number : ENA0557A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4089LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .
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2SK4089LS
ENA0557A
A0557-5/5
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K4124
Abstract: 2SK4124 A0746 A0746-4
Text: 2SK4124 注文コード No. N A 0 7 4 6 A 三洋半導体データシート 半導体データシート No.NA0746 をさしかえてください。 2SK4124 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
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2SK4124
NA0746
K4124
IT12247
PW10s
IT12248
IT12249
IT10478
A0746-4/5
K4124
2SK4124
A0746
A0746-4
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FL4037
Abstract: No abstract text available
Text: Ordering number : ENA1831A BFL4037 N-Channel Power MOSFET http://onsemi.com 500V, 16A, 0.43Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.33Ω (typ.) 10V drive • Input capacitance Ciss=1200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1831A
BFL4037
O-220F-3FS
1200pF
PW10s,
11ere
A1831-6/6
FL4037
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K4087
Abstract: 000-009-30
Text: Ordering number : ENA0555E 2SK4087LS N-Channel Power MOSFET http://onsemi.com 600V, 14A, 610mΩ, TO-220F-3FS Features • • ON-resistance RDS on =0.47Ω (typ.) 10V drive • Input capacitance Ciss=1200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA0555E
2SK4087LS
O-220F-3FS
1200pF
PW10s,
A0555-7/7
K4087
000-009-30
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2SK4126
Abstract: A0748-3
Text: 2SK4126 Ordering number : ENA0748A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4126 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.
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2SK4126
ENA0748A
A0748-5/5
2SK4126
A0748-3
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a1831
Abstract: FL4037 A1831 transistor BFL4037 FL403 ENA1831 BFL4037-S
Text: BFL4037 Ordering number : ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4037 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications
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BFL4037
ENA1831
1200pF
PW10s,
A1831-5/5
a1831
FL4037
A1831 transistor
BFL4037
FL403
ENA1831
BFL4037-S
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K4087
Abstract: 2SK4087LS
Text: 2SK4087LS Ordering number : ENA0555E SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4087LS General-Purpose Switching Device Applications Features • • ON-resistance RDS on =0.47Ω (typ.) 10V drive • Input capacitance Ciss=1200pF (typ.) Specifications
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ENA0555E
2SK4087LS
1200pF
PW10s,
A0555-7/7
K4087
2SK4087LS
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2SJ413
Abstract: tr1007 J413
Text: 2SJ413 Ordering number : EN5366B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ413 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitating mounting.
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2SJ413
EN5366B
2SJ413
tr1007
J413
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VEC2819
Abstract: No abstract text available
Text: VEC2819 Ordering number : ENA0536A SANYO Semiconductors DATA SHEET VEC2819 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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VEC2819
ENA0536A
A0536-6/6
VEC2819
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