IT02383 Search Results

6bd11

Abstract: E12-70 general electric
Contextual Info: 6BD11 Page 1 •es 12-63 6BD11 COMPACTRON DISSIMILAR-DOUBLE-TRIODE PENTODE — DESCRIPTION A N D R A T IN G — — The 6BD11 is a compactron containing a high-mu triode, a medium-mu triode, and a sharpcutoff pentode. The high-mu triode is intended for general-purpose use, the medium-mu triode

Contextual Info: Ordering number : ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2178 [5LP01N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5

TA-2004

Abstract: ta 2004
Contextual Info: Ordering number : ENN6646 3LP01N P-Channel Silicon MOSFET 3LP01N Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2178 5.0 4.0 [3LP01N] 4.0 5.0 • Package Dimensions 0.6 2.0 0.45 0.5

5HP01N

Contextual Info: Ordering number : ENN6642 5HP01N P-Channel Silicon MOSFET 5HP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2178 [5HP01N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5

5HN01N

Abstract: IT00048 IT00049
Contextual Info: 注文コード No. N 6 6 3 8 5HN01N No. N 6 6 3 8 82200 新 5HN01N 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

66382

Contextual Info: Ordering number : ENN6638 5HN01N N-Channel Silicon MOSFET 5HN01N Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2178 5.0 4.0 [5HN01N] 4.0 5.0 • Package Dimensions 0.6 2.0 0.45 0.5