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IT00258 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MCH6612 Ordering number : EN7078A N-Channel Silicon MOSFET MCH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
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MCH6612 EN7078A | |
Contextual Info: Ordering number:ENN6535 N-Channel Silicon MOSFET 5HN02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2180 [5HN02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3 1.3 |
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ENN6535 5HN02SP 5HN02SP] | |
TA-2939
Abstract: 5HN02N
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5HN02N 100mA 100mA, IT00254 IT00258 IT00259 200mA IT00260 TA-2939 5HN02N | |
MOSFET marking YF
Abstract: D1099 5HN02M
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5HN02M EN6129A MOSFET marking YF D1099 5HN02M | |
Contextual Info: Ordering number:ENN6129 N-Channel Silicon MOSFET 5HN02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2158 0.3 0.2 0.425 [5HN02M] 0.15 3 0.425 2.1 1.250 0 to 0.1 |
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ENN6129 5HN02M 5HN02M] | |
Contextual Info: Ordering number:ENN6534 N-Channel Silicon MOSFET 5HN02N Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2178 [5HN02N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 |
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ENN6534 5HN02N 5HN02N] | |
TA-2701Contextual Info: Ordering number:ENN6363 N-Channel Silicon MOSFET 5HN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2091A [5HN02C] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate |
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ENN6363 5HN02C 5HN02C] TA-2701 | |
MCH6612Contextual Info: Ordering number : ENN7078 MCH6612 N-Channel Silicon MOSFET MCH6612 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive. Composite type with 2 MOSFETs contained in a single |
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ENN7078 MCH6612 MCH6612] MCH6612 | |
Contextual Info: 5HN02M Ordering number : EN6129A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5HN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C |
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EN6129A 5HN02M | |
TA-2701
Abstract: 5HN02C
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5HN02C EN6363A TA-2701 5HN02C | |
MCH6612Contextual Info: MCH6612 注文コード No. N 7 0 7 8 B 三洋半導体データシート 半導体データシート No.N7078A をさしかえてください。 MCH6612 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス |
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MCH6612 N7078A 900mm2 100mA 100mA, IT00258 IT00260 900mm2 MCH6612 | |
EN6129AContextual Info: 5HN02M Ordering number : EN6129A N-Channel Silicon MOSFET 5HN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol |
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5HN02M EN6129A EN6129A | |
MCH6612Contextual Info: MCH6612 Ordering number : EN7078B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
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MCH6612 EN7078B PW10s, MCH6612 | |
5HN02MContextual Info: 注文コード No. N 6 1 2 9 5HN02M No. 6 1 2 9 62299 新 5HN02M 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃ |
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5HN02M 100mA 100mA, IT00258 IT00259 200mA IT00260 IT00261 5HN02M | |
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PMB2312
Abstract: PMB 2312 siemens Prescaler
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OCR Scan |
PMB2312 Q67000-A6039 a23SbGS 23SbOS PMB2312 PMB 2312 siemens Prescaler | |
Contextual Info: 5HN02C Ordering number : EN6363A 5HN02C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol |
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5HN02C EN6363A |