IT00235 Search Results

Contextual Info: 3LN02M Ordering number : EN6128A N-Channel Silicon MOSFET 3LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

70306

Abstract: MCH6615 IT0251
Contextual Info: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low

MCH6608

Contextual Info: MCH6608 Ordering number : EN7040A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6608 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

en6128

Abstract: 3LN02M D1099 marking YD
Contextual Info: 3LN02M Ordering number : EN6128A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 3LN02C Ordering number : EN6362A N-Channel Silicon MOSFET 3LN02C General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

Contextual Info: MCH6608 Ordering number : EN7040A N-Channel Silicon MOSFET MCH6608 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: MCH6615 Ordering number : EN6796A MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.

TA-2952

Abstract: marking YD TA-295
Contextual Info: Ordering number : ENN6549 3LN02N N-Channel Silicon MOSFET 3LN02N Ultrahigh-Speed Switching Applications Features • • Low ON resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2178 [3LN02N] 5.0 4.0 4.0 5.0 • Package Dimensions 0.6 2.0 0.45 0.5

MCH6608

Abstract: 70-402
Contextual Info: MCH6608 注文コード No. N 7 0 4 0 A 三洋半導体データシート 半導体ニューズ No.N7040 とさしかえてください。 MCH6608 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

en6128

Contextual Info: 3LN02M Ordering number : EN6128A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

IT0251

Abstract: MCH6615
Contextual Info: Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs,

marking YD

Contextual Info: Ordering number:ENN6128 N-Channel Silicon MOSFET 3LN02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [3LN02M] 0.15 3 0.425 2.1 1.250 0 to 0.1

CPH6605

Contextual Info: 注文コード No. N 7 1 8 3 CPH6605 三洋半導体データシート N CPH6605 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ ロードスイッチング用 ・低オン抵抗超高速スイッチングの P チャネルおよび P チャネル MOS ドライブ用の小信号 N チャネル

IT0251

Abstract: MCH6615 TA2910
Contextual Info: MCH6615 注文コード No. N 6 7 9 6 A 三洋半導体データシート 半導体ニューズ No.N6796 をさしかえてください。 MCH6615 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

MCH6608

Contextual Info: Ordering number : ENN7040 MCH6608 N-Channel Silicon MOSFET MCH6608 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single

marking YD

Contextual Info: Ordering number:ENN6362 N-Channel Silicon MOSFET 3LN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [3LN02C] 0.5 0.4 0.16 0 to 0.1 1 : Gate 2 : Source 3 : Drain

6550-3

Contextual Info: Ordering number : ENN6550 3LN02SP N-Channel Silicon MOSFET 3LN02SP Ultrahigh-Speed Switching Applications Features • • Low ON resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2180 [3LN02SP] 4.0 2.2 3.0 • Package Dimensions 15.0 0.6 1.8 0.4

IT0251

Abstract: MCH6615 Diode catalog
Contextual Info: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low

MCH6608

Contextual Info: MCH6608 Ordering number : EN7040A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6608 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

3LN02C

Abstract: TA-2848 marking yd en6362a
Contextual Info: 3LN02C Ordering number : EN6362A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN02C General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C