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    ISS 9 Search Results

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    ISS 9 Price and Stock

    Vishay Siliconix SISS98DN-T1-GE3

    MOSFET N-CH 200V 14.1A PPAK
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    SISS98DN-T1-GE3 Cut Tape 4,350 1
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    SISS98DN-T1-GE3 Reel 3,000 3,000
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    Vishay Siliconix SISS92DN-T1-GE3

    MOSFET N-CH 250V 3.4A/12.3A PPAK
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    DigiKey SISS92DN-T1-GE3 Cut Tape 2,978 1
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    SISS92DN-T1-GE3 Digi-Reel 2,978 1
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    SISS92DN-T1-GE3 Reel 3,000
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    Vishay Siliconix SISS94DN-T1-GE3

    MOSFET N-CH 200V 5.4A/19.5A PPAK
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    SISS94DN-T1-GE3 Reel 3,000
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    LeaderTech 7-19PCI-SS-9.0

    RFI FINGERSTOCK BECU ADH
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    DigiKey 7-19PCI-SS-9.0 Bulk 20
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    LeaderTech 7-19PCI-SS-9.2

    RFI FINGERSTOCK BECU ADH
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    DigiKey 7-19PCI-SS-9.2 Bulk 500
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    ISS 9 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ISS92 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ISS93 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ISS94 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    ISS 9 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    phase detector AD8302

    Abstract: ad8307
    Text: RF/IF: Log/RF Power/RF Detector /Contollers Funvtion Model AD8313 Detector/Contoller AD8314 Detector MODEL AD8361 Detector/Contoller AD8361 Detector/Contoller Vss Iss Iss S’down Rin Frequency Ragne +V mA uA ohms Mhz 3 3 15.5 5.7 150 95 900 3000 1>2500 100>2500


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    AD8313 AD8314 100MHz 100MHz 100nsec 400nsec 150nsec AD8302 Page-50 phase detector AD8302 ad8307 PDF

    pt 8538

    Abstract: No abstract text available
    Text: RF/IF: IF Receivers, Transmitters Transceivers IF SUBSYSTEMS: RECEIVERS <<<<<<<<<< Mixer Input >>>>>>>> RF 1dB Range I3P Comp NF MHz dBm dBm dB Model Vss +V Iss mA AD608 2.7 7.3 Model Vss +V Iss mA AD607 2.7 8.5 500 AD6432 2.7 8 350 AD6121 2.7 10 NA AD6459


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    AD608 AD6432 AD6122 AD6411 940Mhz 2820Mhz -10dBc -20dBc Page-71 pt 8538 PDF

    ARM1136J

    Abstract: ARM1136J-S arm processor ARM processor based Circuit Diagram ARM1136 ARM1156T2F-S arm8 ARM10 ARM11 ARM1136JF-S
    Text: RealView ARMulator ISS ® Version 1.4.3 User Guide Copyright 2002-2007 ARM Limited. All rights reserved. ARM DUI 0207D RealView ARMulator ISS User Guide Copyright © 2002-2007 ARM Limited. All rights reserved. Release Information The following changes have been made to this book.


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    0207D ARM1136J ARM1136J-S arm processor ARM processor based Circuit Diagram ARM1136 ARM1156T2F-S arm8 ARM10 ARM11 ARM1136JF-S PDF

    AD8316

    Abstract: to-12dB AD8313 AD8314 AD8315 AD8361 CF controller
    Text: RF/IF: True Power Power Detector/Contollers Model Vss Iss +V mA Iss S’down uA Rin ohms Frequency Ragne Mhz Dynamic Range dB @ 100MHz Controller Mode Log Slope mV/dB Log Intercept dBV Response Time nsec Log Amp Bandwidth MHz Slew Rate V/usec # of Outputs


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    100MHz) AD8313 AD8314 AD8361 100MHz Page-164 AD8316 to-12dB AD8313 AD8314 AD8315 AD8361 CF controller PDF

    smd transistor ISS

    Abstract: smd transistor 26 2SK3902 TRANSISTOR SMD 15a 30A90
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1 2.54


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    2SK3902 O-263 smd transistor ISS smd transistor 26 2SK3902 TRANSISTOR SMD 15a 30A90 PDF

    stc TUBE

    Abstract: Arm610 ARM10 ARM11 ARM926EJ-S CP15 arm8 ARM925 ARM925T
    Text: RealView ARMulator ISS ® Version 1.4 User Guide Copyright 2002-2004 ARM Limited. All rights reserved. ARM DUI 0207C RealView ARMulator ISS User Guide Copyright © 2002-2004 ARM Limited. All rights reserved. Release Information The following changes have been made to this book.


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    0207C stc TUBE Arm610 ARM10 ARM11 ARM926EJ-S CP15 arm8 ARM925 ARM925T PDF

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog VDE-ISS 6 Order No.: 1201934 The illustration shows version VDE-ISS 8 Allen wrench, fully insulated, safety tool in accordance with EN 60900, length: 150 mm, handle width: 110 mm, for all terminal blocks with 8


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    CL-2007) PDF

    smd diodes s4 1.5w

    Abstract: PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a
    Text: Semelab Limited High Reliability and Screening Options DOC 2624 ISS 8 Contents 1. Introduction. 1 2. Quality Approvals . 2


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    QR209 BS9300 QR216 QR204 MIL-PRF-19500 smd diodes s4 1.5w PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors MOSFET IC SMD Type Product specification 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1


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    2SK3902 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2


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    2SK3899 O-263 PDF

    smd transistor ISS

    Abstract: 2SK3899 2SK38
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2


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    2SK3899 O-263 smd transistor ISS 2SK3899 2SK38 PDF

    5SII

    Abstract: 3H4 Photocoupler ED-96
    Text: ED-96027 SPEC, No. SHARP ‘ Iss~;~* 27, 1996 PAGE’ ELECTROMC COMPONENTS GROUP SHARP CORPORATION ‘ “ 11 Page% ?$ ~~ ,-. REPRESENTATIVE DMSION OPTO-ELECTRONIC DEVICES DW. SPECIFICATION DEVICE SPECIFICATION FOR PHOTOCOUPLER MODEL No. PC3H4 Business dealing name : PC3H4


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    ED-96027 designe96 5SII 3H4 Photocoupler ED-96 PDF

    schematic APC

    Abstract: ISS201 11CT2
    Text: APC14107 ISDN s interface hybrid ISS 2 01/99 electrical specifications @ 25 c Operating Temperature 0 c to 70 c Turns Ratio (+/- 5%) Primary Inductance (mH min) Leakage Inductance (uH max) Primary DCR (OHMS +/-20%) Secondary DCR (OHMS +/-20%) 1CT:1&1CT:2


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    APC14107 1500Vrms 16TXPIN 75mmMAX. schematic APC ISS201 11CT2 PDF

    irf360lc

    Abstract: ID 9302 IRFP360LC IRFPE30
    Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω


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    IRFP360LC IRFPE30 irf360lc ID 9302 IRFP360LC IRFPE30 PDF

    irf460lc

    Abstract: IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


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    IRFP460LC stanFPE30 irf460lc IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L PDF

    IRFPC60LC

    Abstract: IRFPE30
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


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    IRFPC60LC stanFPE30 IRFPC60LC IRFPE30 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω


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    IRFP350LC 08-Mar-07 PDF

    IRFP360LC

    Abstract: IRFPE30
    Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω


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    IRFP360LC 12-Mar-07 IRFP360LC IRFPE30 PDF

    IRF350LC

    Abstract: IRFP350LC IRFPE30
    Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω


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    IRFP350LC 12-Mar-07 IRF350LC IRFP350LC IRFPE30 PDF

    PF0002

    Abstract: 15m0
    Text: ISS 11 DATE ISS CHANGE ' CN11808 CHANGE DATE ISS. Jl/o/w CHANGE DATE THIRD ANGLE PROJECTION DO NOT SCALE DRAWING 1 36.00 CRS FIXING DETAIL O o CNÌiï < W T List No. DIM A P F 0002/28 27.0 P F 00 02 /4 8 26.5 PF 0002/63 27.6 : fglBULGIN Lhm J BULON COhPOrCNTS PLC.


    OCR Scan
    CN11808 0002/T BS4491 103MQ PF0002 15m0 PDF

    Untitled

    Abstract: No abstract text available
    Text: CS8920 B Buffer Configuration (BufCFG) (C) Buffer Event (BufEvent) (D) Advance Interrupt Control and Status (ADVintCTL/ST) (10) Receive M iss C ounter (RxM ISS (12) Trans. Collision Count (TxCOL) (13) Line Control (LineCTL) . (14) Line Status (LineST) .


    OCR Scan
    CS8920 10BASE-T DS174PP1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 I 2 I 3 I 4 I 5 I 6 I 7 I 8 R E V IS IO N S ISS ZONE DES0 RlRTIC JN \PER REO U EST\D ATE REF, 5-01.3 J T U - 5 .0 8 - J RGB MOUNTING HOLE ISS: 7.5 -CONNECTOR ACCORDING TO: NRC 9 3 - 5 7 0 , DIN 4 7 - 2 95, CEI1 6 9 - 1 3 , UT EC 9 3 - 5 7 0 D IM E N S IO N S A R E IN M IL L IM E T E R 5


    OCR Scan
    1566252AF-ER1 5B-335-RTIC 5B-335-05L, PDF

    TIP-29C

    Abstract: UP10-T0127-2CB
    Text: UP Dual Mount Series UP-T0127-2CB w/ 2 TIP-29C (T0-220) T R A N SIST O R S D E S C R IP T IO N OF CURVES A. N.C. O n ly B. N.C. W ith H oriz. D e vice M o u n t e d to G-10. H o riz. & Vert. D issip a to r. C. 2 0 0 F P M w / D iss. D. 5 0 0 F P M w / D iss.


    OCR Scan
    UP-T0127-2CB TIP-29C T0-220) 09part e28Pf UP10-000-CB P10-000-B UP10-000 UP10-T0127-2U UP10-T0127-2CB TIP-29C PDF

    outgoing material inspection format

    Abstract: GL521 GP1UM101XP GP1UM10XP PD49PI M10XP
    Text: ISS CUADD mm—ma OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION f DEVICE SPECIFICATION FOR Infrared Detecting unit for Remote Control MODEL No. GP1UM10XP series V_ ;_ J Specified for


    OCR Scan
    GP1UM10XP ED-02227 500pcs. 000pcs. RUD2404 outgoing material inspection format GL521 GP1UM101XP PD49PI M10XP PDF