ISS 3 Search Results

PF0002

Abstract: 15m0
Contextual Info: ISS 11 DATE ISS CHANGE ' CN11808 CHANGE DATE ISS. Jl/o/w CHANGE DATE THIRD ANGLE PROJECTION DO NOT SCALE DRAWING 1 36.00 CRS FIXING DETAIL O o CNÌiï < W T List No. DIM A P F 0002/28 27.0 P F 00 02 /4 8 26.5 PF 0002/63 27.6 : fglBULGIN Lhm J BULON COhPOrCNTS PLC.

Contextual Info: MOSFET Transistors IC SMD Type Product specification 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2

smd transistor ISS

Abstract: 2SK3900
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2 +0.2

smd transistor ISS

Abstract: mosfet 20v 30A 2SK3901 SMD Transistor MU
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3901 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low On-state resistance 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1950 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS on 2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A)

smd transistor ISS

Abstract: smd transistor 26 2SK3902 TRANSISTOR SMD 15a 30A90
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1 2.54

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2

smd transistor ISS

Abstract: 2SK3899 2SK38
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2

Contextual Info: 1 I 2 I 3 I 4 I 5 I 6 I 7 I 8 R E V IS IO N S ISS ZONE DES0 RlRTIC JN \PER REO U EST\D ATE REF, 5-01.3 J T U - 5 .0 8 - J RGB MOUNTING HOLE ISS: 7.5 -CONNECTOR ACCORDING TO: NRC 9 3 - 5 7 0 , DIN 4 7 - 2 95, CEI1 6 9 - 1 3 , UT EC 9 3 - 5 7 0 D IM E N S IO N S A R E IN M IL L IM E T E R 5

Stag P301

Abstract: Stag Programmer P301 p301 stag manual p301 stag user manual p301 stag P301 graphical LCD screen 20 pin with sound ic moving message display
Contextual Info: Operating Manual for the P301 Programmer Stag International Ltd Silver Court, Watchmead Welwyn Garden City Hertfordshire AL7 1LT United Kingdom Tel: +44 1707 332148 Fax: +44 1707 371503 sales@stag.co.uk www.stag.co.uk Stag International Ltd. 2002 803 1171 Iss. 4

727A

Abstract: dpcm band width dpcm Pulse Code Modulation XC4000 V150BG352-4
Contextual Info: 32-Channel Duplex ADPCM Transcoder for Virtex FPGAs Digital signal processing without the complicated DSP chip— that's the power of Xilinx DSP solutions in Virtex FPGAs. by David Mann, Marketing Communications, Integrated Silicon Systems Ltd, dmann@iss-dsp.com

Contextual Info: ISS REVISIONS DESCRIPTION\DATE - in ’S CO « 12.7 APRD: CHKD: TITLE: INSULATED BNC JACK DR: RS Stock No. 5265915 DRAWING NO: UNLESS OTHERWISE SPECIFIED TOLERANCES 0.5-6 = ±0.2 >6-3 0 - ±0.4 >30-120 - ±0.6 >120-315 = ±1 >315-1000 = ±1.6

irf360lc

Abstract: ID 9302 IRFP360LC IRFPE30
Contextual Info: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω

TIP-29C

Abstract: UP10-T0127-2CB
Contextual Info: UP Dual Mount Series UP-T0127-2CB w/ 2 TIP-29C (T0-220) T R A N SIST O R S D E S C R IP T IO N OF CURVES A. N.C. O n ly B. N.C. W ith H oriz. D e vice M o u n t e d to G-10. H o riz. & Vert. D issip a to r. C. 2 0 0 F P M w / D iss. D. 5 0 0 F P M w / D iss.

Contextual Info: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω

Contextual Info: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω

IRF450L

Contextual Info: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω

IRF450LC

Abstract: IRFP450LC IRFPE30
Contextual Info: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω

irf460lc

Abstract: IRFP460LC IRFPE30 irf46
Contextual Info: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω

mosfet 600V 16A

Abstract: IRFPC60LC IRFPE30
Contextual Info: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω

Contextual Info: ADV MICRO PLA /PLE/A RRAY S PRELIM IN ARY b4E » □ SS752b □Ü337flcl ISS IAMDS IND: -25 PALLV22V10Z-25 Low-Voltage, Zero-Power 24-Pin EE CMOS Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3 V JEDEC

IRF360LC

Contextual Info: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω

Contextual Info: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω

IRF350LC

Abstract: IRFP350LC IRFPE30
Contextual Info: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω