eltek rectifier
Abstract: saft rectifier emerson PLC Gaston Battery Dearborn Wire and Cable EMERSON rectifier peco II design ideas eltek GULF
Text: TELECOM POWER: NEW DEVELOPMENTS TO SUPPORT THE LATEST TECHNOLOGIES SEPTEMBER 10 – SEPTEMBER 14, 2006 RICC PROVIDENCE, RHODE ISLAND, U.S.A. www.intelec.org Sponsored by The Power Electronics Society of the Institute of Electrical and Electronics Engineers
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Abstract: No abstract text available
Text: Februar 2012 Sensor Actor Line CONEC erweitert das Portfolio für Buskomponenten M12x1 Steckverbinder mit X-Codierung Moderne Automatisierungslösungen benötigen für die unterschiedlichen Automatisierungsinseln Automation Island Networks eine durchgängige Kommunikationsverkabelung. Im Kreislauf
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M12x1
500MHz/10
SAL-12X-RS8
SAL-12X-FK8
ISO9001
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Untitled
Abstract: No abstract text available
Text: Hauptübersicht | Unternehmen | Index Main Overview | Company | Index PUMA, Deutschland Gebäude-Außenbeleuchtung LED-Modul: LEDLine Flex Outdoor Wikinger-Museum, Island Innenraumbeleuchtung LED-Modul: LEDLine Flex RGB Indoor Hotel Wettringen, Deutschland
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M770
Abstract: P110 ITS-2000
Text: Customer Profile A Lucent Technologies Solution for Women & Infants Hospital Women & Infants Hospital upgrades network performance, preserves reliability for Rhode Island’s premier birthing center Challenge: Upgrading network performance on flat, shared
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10Mbps
E6242
M770
P110
ITS-2000
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TIP31C
Abstract: TIP31c PNP Transistor tip31c application TIP31C1 TIP31CO Part Marking TO-220 STMicroelectronics JESD97 TIP32C tip31c3 tip31c transistor
Text: TIP31C Power transistors General features • New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping 3 Applications ■ 1 Linear and switching industrial application 2 TO-220 Description The TIP31C is a base island technology NPN
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TIP31C
O-220
TIP31C
O-220
TIP32C.
TIP31c PNP Transistor
tip31c application
TIP31C1
TIP31CO
Part Marking TO-220 STMicroelectronics
JESD97
TIP32C
tip31c3
tip31c transistor
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D1805
Abstract: BTD1805FP
Text: CYStech Electronics Corp. Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2005.07.26 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
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C820FP
BTD1805FP
UL94V-0
D1805
BTD1805FP
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2n5191 jan
Abstract: 2N5191
Text: 2N5191 2N5192 NPN power transistors Features • NPN transistors Applications ■ s ct Linear and switching industrial equipment u d o Description r P e The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain
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2N5191
2N5192
2N5192
2N5195.
OT-32
OT-32
2n5191 jan
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Untitled
Abstract: No abstract text available
Text: VNQ600P-E Quad channel high side driver Features Max supply voltage VCC 36V Max On-state resistance RON 35m 1 Current limitation (typ.) ILIM 25A 1. Per each channel. SO-28 (double island) • DC short circuit current: 22A ■ CMOS compatible inputs ■
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VNQ600P-E
SO-28
VNQ600P-E
SO-28
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TIP29C
Abstract: TIP29A TIP-29C JESD97 TIP30A TIP30C
Text: TIP29A TIP29C NPN power transistors Features • . NPN transistors Applications ■ Audio, linear and switching applications Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain
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TIP29A
TIP29C
TIP30A
TIP30C.
O-220
TIP29C
TIP29A
TIP-29C
JESD97
TIP30C
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7390
Abstract: No abstract text available
Text: VNQ830 Quad channel high-side driver Features Type RDS on IOUT VCC VNQ830 65 mΩ(1) 6A 36V 1. Per each channel. SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VNQ830
SO-28
VNQ830
VND830
7390
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ISO7637
Abstract: VND830 VNQ830 VNQ83013TR C1628
Text: VNQ830 Quad channel high-side driver Features Type RDS on IOUT VCC VNQ830 65 mΩ(1) 6A 36V 1. Per each channel. SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VNQ830
SO-28
VNQ830
VND830
ISO7637
VNQ83013TR
C1628
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ISO7637
Abstract: VND920 VND92013TR
Text: VND920 Double channel high-side solid-state relay Features Type RDS on VND920 16 mΩ IOUT (1) 35 A VCC 36 V 1. Per channel with all the output pins connected to the PCB. SO-28 (double island) • CMOS compatible input ■ Proportional load current sense ■
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VND920
SO-28
VND920
ISO7637
VND92013TR
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Untitled
Abstract: No abstract text available
Text: VNQ600 Quad channel high side solid state relay Features Max supply voltage VCC 36V Max On-state resistance RON 35mΩ 1 Current limitation (typ.) ILIM 25A ) s ( ct 1. Per each channel. u d o SO-28 (double island) • DC short circuit current: 25A ■ CMOS compatible inputs
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VNQ600
SO-28
VNQ600
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Abstract: No abstract text available
Text: STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDS RDS on max ID STL8DN10LF3 100 V 35 mΩ 7.8 A • Designed for automotive applications and
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STL8DN10LF3
AEC-Q101
DocID023009
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Untitled
Abstract: No abstract text available
Text: VND920 Double channel high-side solid-state relay Features Type VND920 RDS on IOUT 16 mΩ 35 VCC A(1) ) s ( ct 36 V 1. Per channel with all the output pins connected to the PCB. u d o SO-28 (double island) • CMOS compatible input ■ Proportional load current sense
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VND920
SO-28
VND920
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Untitled
Abstract: No abstract text available
Text: VNQ810 Quad channel high side driver Features Type RDS on IOUT VCC VNQ810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection
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VNQ810
SO-28
VNQ810
VND810
DocID7387
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Untitled
Abstract: No abstract text available
Text: VNQ830M Quad channel high side driver Features Type RDS on IOUT VCC VNQ830M 60mΩ(1) 6A 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection
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VNQ830M
SO-28
VNQ830M
VND830M
DocID7392
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Untitled
Abstract: No abstract text available
Text: STL8DN6LF3 Automotive-grade dual N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDS RDS on max ID STL8DN6LF3 60 V 30 mΩ 7.8 A • Designed for automotive applications and
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AEC-Q101
DocID022261
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7390
Abstract: No abstract text available
Text: VNQ830 Quad channel high-side driver Features Type RDS on IOUT VCC VNQ830 65 mΩ(1) 6A 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VNQ830
SO-28
VNQ830
VND830
7390
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STL8DN10LF3
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: STL8DN10LF3 Dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET III Power MOSFET in PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDSS RDS on max ID STL8DN10LF3 100 V < 35 mΩ 7.8 A (1) 1. The value is rated according to Rthj-pcb
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STL8DN10LF3
STL8DN10LF3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Untitled
Abstract: No abstract text available
Text: STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDS RDS on max ID STL8DN10LF3 100 V 35 mΩ 7.8 A (1) 1. The value is rated according Rthj-pcb
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STL8DN10LF3
AEC-Q101
DocID023009
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2SB1205
Abstract: 2SB1143 2sc4675
Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.
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2SB764/2SD863
2SB892/2SD1207*
2SB927/2SD1247*
2SB985/2SD1347*
2SB1131*
2SD1145
2SA1641/2SC4306*
2SB1201/2SD1801*
2SB1202/2SD1802*
2SB1203/2SD1803*
2SB1205
2SB1143
2sc4675
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NPN POWER TRANSISTOR 2SD1878
Abstract: transistor 2sD1880 D1879 sd1878
Text: SAXYO TRANSISTO RS FOR CRT DISPLAY VIDEO O U TPUT A P PLICATIONS Transistors for High~Definition Monitor TV Applications Transistors for Video Output Applications The use of new technology, FBET Fold-Back Electrode Transistor and MBIT (Multi-Base Island Transistor), that are
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50MHz.
MT921226TR
NPN POWER TRANSISTOR 2SD1878
transistor 2sD1880
D1879
sd1878
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Untitled
Abstract: No abstract text available
Text: • About Cherry Semiconductor Cherry Semiconductor Corporation supplies high quality, high volume standard, semi-custom and custom linear bipolar and power BiCMOS products to automotive, computer, and industrial markets worldwide from its 202,000 sq. ft. design and manufacturing facility in East Greenwich, Rhode Island. Satellite offices are located in Alabama,
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