ecg semiconductors master replacement guide
Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei
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matsua resistor network
Abstract: matsushita resistor network matsushita RESISTOR 7483 resistor network matsua matsua RESISTOR
Text: No.191 July 1999 Chip resistor network Chip attenuator Minimum size in the market Industry/Field: Mobile communication, Automobilenavigation, Set top box, RF-module Smaller π-Pad attenuator in 0404 size • Development Target: Market : Equipment which needs attenuation, level-adjustment,
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gd 09
Abstract: sk 753 Semikron sK1 04 SK 09 D 08 3S1E T-03-1 3GD10 SK3GD08 SK3GD06 28N04
Text: S1E D ai3t.b71 OGüB'lül T37 ISEK G SEMIKRDN SEUIKRON INC V rsm Ifr m s V rrm 3A If a v Fast Recovery Rectifier Diodes maximum values for continuous operation 3A 10 A (sin. 180; Tref= 120 °C, L = 10 mm; f < 1 kHz) SK 09 D SK 1 GD SK3GD 1,1 A 1,15 A 2,7 A
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SK3GD06
13bb71
gd 09
sk 753
Semikron sK1 04
SK 09 D 08
3S1E
T-03-1
3GD10
SK3GD08
SK3GD06
28N04
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EY81
Abstract: diode V6 81 PY81 philips tubes max 5000 TELEVISION BOOSTER
Text: PHILIPS E Y 81 BOOSTER DIODE for time base circuits in television re ceivers DIODE SURVOLTEUSE pour les circuits base de temps de récepteurs de télévision SPANNUNGSERHÖHERDIODE BOOSTER f.ür Zeitbasisstromkreise in Fernsehempfängern Heating : indirect; parallel supply
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ECL85
Abstract: pentode ecl85 philips oszillator philips B TR10DE equivalente
Text: PHILIPS ÎËCL85 TRIODE-PENTODE for use as frame output tube and frame oscillator or pulse amplifier in television receivers. TRIODE PENTODE pour utilisation comme tube de sortie pour le balayage image et oscillatrice pour le balayage image ou amplificatrice d'impulsions dans les récepteurs de
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ECL85
ECL85
pentode ecl85
philips oszillator
philips B
TR10DE
equivalente
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semikron SK 50 DB 100 D
Abstract: No abstract text available
Text: SIE D Ö13bb71 GÜG3ÖDD 11T S EM IK R O N SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = - 2 V Values > CM I II III m > VcEV Units 1200 V 1200 V V VCBO Ie = 0 1200 V ebo lc = 0 7 V lc D. C. 50 A tp = 1 ms 100 A D. C. 50 A ICM If = - l c
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13bb71
11iti;
fll3bb71
T-33-35
semikron SK 50 DB 100 D
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Untitled
Abstract: No abstract text available
Text: S1E D • Û 1 3 tib71 Q D D 3 4 0 ^ 713 M S E K C SEMIKRDN S E M I K R O N INC Thyr istor Vrsm Vdrm Vrrm V V Diode Vrsm Vrrm V 1500 1400 2000 1700 1600 2500 2300 2200 3000 = 90 °<2 R.M.S. motor current pe phase) IMRMS 320 A (T e a s e | 410 A 360 A SKKH 131/14 E 20 SKKH 161/14 E 20 SKKH 210/14 E 20
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tib71
SKKH131
SKKL131
SKKH161
SKKL161
SKKH210
SKKL210
SKKT131,
SKKT161,
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Untitled
Abstract: No abstract text available
Text: 51E D Ô13bb71 DDD371Ô M7T se MIKRDN SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Ptot Tj, Tslg Visol hum idity climate C onditions 1 • SEK G Values . 102 D 122 D 1000 I 1200 1000 1 1200 400/300 800/600 ±20 2500 - 5 5 . . .+150
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13bb71
DDD371Ã
013bb71
G037E5
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Semikron SK 3 G
Abstract: Semikron sk 1/08
Text: S1E D fllBbL.71 0003032 S1Û se MIKRD n SEMIKRON INC Ifrm s maximum values for continuous operation V rsm V rrm 3A | 6,7 A 1,9 A V 200 400 600 800 1000 1200 Symbol Conditions Ifav 4,3 A SK 1 G 01 S K 1 G 02 SK 1 G 04 SK 1 G 06 SK 1 G 08 SK1 G 10 SK 1 G 12 *
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13bb71
Semikron SK 3 G
Semikron sk 1/08
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E17A
Abstract: SKR 870 diode skn 170 semikron semikron skn 320/02 Semikron SKR320 skn diodes B832 DIN41814 semikron skr 100 DO-200
Text: S1E D • B13fc.fc.71 0003670 533 « S E K G SEMIKRDN SENIKRON INC V rsm Ifrms maximum values for continuous operation V rrm 700 A SKN 320 SKR 320 SKN 400_ IfaV (sin. 180; Tease = 100 °C) 420 A V 200 400 800 1200 1600 1800 2400 2700 3000 SKR 320/02
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fll3bb71
B8-33
T-01-23
M24x1
DO-200
E17A
SKR 870
diode skn 170 semikron
semikron skn 320/02
Semikron SKR320
skn diodes
B832
DIN41814
semikron skr 100
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diode skmd 40 f 10 semikron
Abstract: IR 421F SKMD42F10 SKKD42F15 SKKD42F10 SKKD42F SKKD42F12 SKKD42F14 SKMD42F SKND42F
Text: S IE D • Ö13bb71 00D3421 BID « I S E K G SEMIKRON SËÎÏIIKRON INC V rsm V rrm Ifrms maximum value for continuous operation 120 A V Ifav (sin. 180; Tease =85°C;50Hz) 42 A 1000 SKKD42F 10 SKMD 42 F 10 SKND42F 10 1200 SKKD42 F 12 SKMD 42 F 12 SKND42F 12
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13bb71
00D3421
SKKD42F10
SKND42F10
SKKD42F12
SKND42F12
SKKD42F14
SKKD42F15
SKND42F15
SKKD42F
diode skmd 40 f 10 semikron
IR 421F
SKMD42F10
SKMD42F
SKND42F
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Semikron SKB 7 02
Abstract: DIODE BRIDGE SKB Semikron SKBa SKB 1.2 13 SKB 7 02 SKB 40 SKB 1.2 08 SKB 7 08 SKB 42 SKB1
Text: S1E D Ö13bb71 □GDB'lb'l V rsm Id Tamb = 45 °C 1,2 A VvRMS V V 100 200 400 800 1200 40 80 125 250 500 V(BR) V VvRMS V 1300 500 Types SKB SKB SKB SKB SKB 1,2/01 1,2/02 1,2/04 1,2/08 1,2/12 Cmax [ 5 000 3 300 1 600 800 400 ; ' ! ! ! I Rmin Q 0,5 0,8 1,5
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ai3bb71
Semikron SKB 7 02
DIODE BRIDGE SKB
Semikron SKBa
SKB 1.2 13
SKB 7 02
SKB 40
SKB 1.2 08
SKB 7 08
SKB 42
SKB1
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity
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l3bb71
G0D37G2
10-E1
skm 200 gb 122 d
SKM 200 GB 102 D
SKM 200 GB 12V
Si 122D
SKM 150 GB 12V
SKM 200 GB 102D
skm 150 gal 122d
SEMIKRON SKM 50 GAL 121D
SEMIKRON SKM 22 GAL 121D
semikron skm 150 gb 122
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skm 100 gb 101 d
Abstract: skm 100 gb 121d Si 122D GAL 16 v 8 D DIP skm 100 gb 122 d skm 50 gb 101 d D4252-1 skm 200 gb 122 d skm 75 gb 101 d SEMIKRON SKM 22 GAL 121D
Text: m SIE I Ö13bb?l D[]G3L,7fl TbS » S E K G semikrdn SENIKRON INC Absolute Maximum Ratings Sym bol Values . 101 D I . 121 D . 102.D I . 122 D Conditions 1 1000 VCES Units 1200. 1000 , V 1200 V VCGR R g e = 2 0 kQ Ic Tease = 2 5 /8 0 °C 1 0 0 /7 5 ICM
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13bh71
Woff12
WoH2351
skm 100 gb 101 d
skm 100 gb 121d
Si 122D
GAL 16 v 8 D DIP
skm 100 gb 122 d
skm 50 gb 101 d
D4252-1
skm 200 gb 122 d
skm 75 gb 101 d
SEMIKRON SKM 22 GAL 121D
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skt40
Abstract: SKT40-04C SKT40-08C skt semikron semikron skt 50
Text: ¿IE D • fil3bb?l DD03472 732 « S E K G S EM IK K O N SEMIKRON INC Vrsm Vrrm Vdrm \d-t /c r Itrms (maximum values for continuous operation) 63 A I 78 A lTAv(sin.180;l case ” . °C) 50 A (78 °C) 40A(80°C) V V V /|is 500 400 200 SKT40/04 C 700 600
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13bb71
DD03472
SKT40/04
SKT40/06
SKT40/08
5000A2s
4000A2s
B3-15
l3bb71
GQG3M75
skt40
SKT40-04C
SKT40-08C
skt semikron
semikron skt 50
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PY 81
Abstract: PY tube py81 TELEVISION BOOSTER rs tube
Text: PHILIPS ÎPŸSÏ BOOSTER DIODE for time base circuits in television receivers DIODE SUBVOLTEUSE pour utilisation dans circuits base de temps dans récepteurs de télévision SCHALTERDIODE zur Verwendung ln Zeitbasisschaltungen ln Fernsehempfängern Heating : Indirect by A.C. or D.C.
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7093 magnetron
Abstract: magnetron 2m210-m1 magnetrons Philips TA 2092 N WG22 WR28 L6ss DE diode cepe
Text: PHILIPS Packaged MAGNETRON for use as pulsed oscillator, operating at a fixed frequency within the range 34512-35208 Mc/s, capable of delivering a peak output power of more than 25 kfl at a peak anode current of 12.5 A. It is especially suited for use in high definition short
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magnetrons Philips
Abstract: ABZI magnetrons 2J51 DRUCK GLBT M501 U501 sharp modulateur Scans-0017388
Text: PHILIPS 2J51 F o rc e d - a ir cooled packaged MAQNETRON f o r use as pulsed os c i l l a t o r , tunable over a frequency range from 8500-9600 llc/s cap ab le o f d e liv e r in g a peak o u tp u t power Wop > 40 kW a t Timp_= 1 usee. P u ls e d u ra tio n s o f 0.1 &isec up to 3 .4 usee
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r2J51
7P5J324
7R51377
magnetrons Philips
ABZI
magnetrons
2J51
DRUCK
GLBT
M501
U501
sharp modulateur
Scans-0017388
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Untitled
Abstract: No abstract text available
Text: SIE ]> SEMIKRON V drm V rsm V rrm Irm s1 Volw • ai3bb?l DG03SSfl 2T3 M t S E K G s e M IK R o n INC = 4 l/min., Tw = 40 °C, ED = 50 %, n = 10) V 1600 A 1750 A 1200 SKIW1000/12 SKIW 1200/12 1400 SKIW1000/14 SKIW 1200/14 1600 SKIW 1000/16 SKIW 1200/16 Symbol Conditions
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DG03SSfl
SKIW1000/12
SKIW1000/14
13bt71
13bb71
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Untitled
Abstract: No abstract text available
Text: SIE D Ö13bb71 □□D3ÔPÔ ST1 » S E K G • SEMIKRDN SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, - 2 600 V V II V o V 600 V ebo o 600 o II I m Vbe = Units > II CM UJ CO > VcEV Values 7 V lc D. C. 150 A tp = 1 ms 300 A If = - l c 150
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13bb71
13bb71
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semikron skkt 19 120
Abstract: No abstract text available
Text: m fil3bb?l □DQ33Ô1 ÛOM M S E K G 51E D SEMIKRDN SEMIKRON INC V rsm V rrm dv/ V drm dt cr V Itrm s (m axim um values for continuous operation) 240 A | V/|1S 1 50 A (8 5 °C) V 90 0 800 13 00 1200 50 0 500 1000 1500 1400 1000 1700 1600 1000 19 00 1800 1000
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ai3bb71
00033fib
SKKL131,
SKKL161
semikron skkt 19 120
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Untitled
Abstract: No abstract text available
Text: 51E D fil3hb?l D D G 3 7 Û 4 1M7 SEMIKRON S E M I K R O N INC Maximum Ratings Symbol Conditions VcEVsus lc VcEV CÛ > 1 A, Vbe = - 2V > CM I II LU VcBO = Ie = 0 Values Units 1000 V 1000 V 1000 V V ebo lc = 0 7 V lc D. C. 30 A tp = 1 ms 60 A D. C. 30 A ICM
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fll3bh71
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Untitled
Abstract: No abstract text available
Text: S IE D m Ö1 3 b b 7 1 ÜGQ3 3 7 1 SEniKR0N INC V rsm Vrrm Vdrm dv/ Itrms (maximum value for continuous operation dt)cr 180 A ITAV (sin. 180;Tcase = 80 CC) V 500 400 500 700 600 500 SKKT 105/06 D SKKT 106/06 D 900 800 500 SKKT 105/08 D SKKT 106/08 D1) SKKH 105/08 D SKKH 106/08 D
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fil3bb71
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Untitled
Abstract: No abstract text available
Text: 3bE D SEMIKRON INC ai3bb?l QQQ2fi5M 2 « S E K G • 5EMIKR0N 'T'Vo VoRM I d Tcasa = 89 °C , full conduction V rsm V rrm 28 A 400V SKBT 2 8 /0 4 SKBH 2 8 /0 4 SKBZ 2 8 /0 4 SKCH 2 8 /0 4 600 V SKBT 2 8 /0 6 SKBH 2 8 /0 6 SKBZ 2 8 /0 6 SKCH 2 8 /0 6 800 V
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SKBT28
SKBZ28
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