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    ISD 2055 Search Results

    ISD 2055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS2055D
    		Texas Instruments 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 Visit Texas Instruments Buy
    TPS2055AD
    		Texas Instruments 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85 Visit Texas Instruments Buy
    TPS2055ADR
    		Texas Instruments 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85 Visit Texas Instruments
    TPS7A2055PDBVR
    		Texas Instruments 300-mA ultra-low-noise low-IQ low-dropout (LDO) linear regulator with high PSRR 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    TPS922055MDMTR
    		Texas Instruments 65-V, 4-A buck LED driver with inductive fast dimming and spread spectrum 14-VSON -55 to 125 Visit Texas Instruments

    ISD 2055 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    13N50

    Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and


    Original     		13N50 13N50 QW-R502-362 utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T PDF

    13N50

    Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can


    Original     		13N50 13N50 O-220 O-220F QW-R502-362 13N50 equivalent 13n50g 13N50G-TF1-T 362 MOSFET PDF

    Diode S4 55a

    Abstract: 11n50 ISD 2055 11N-50
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		11N50 11N50 O-220F1 QW-R502-462 Diode S4 55a ISD 2055 11N-50 PDF

    TO-220 DIODE 11A

    Abstract: VDS-500V 11n50
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		11N50 O-220 11N50 O-220F O-220F1 O-262 QW-R502-462 TO-220 DIODE 11A VDS-500V PDF

    11N50

    Abstract: 11N-50
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		11N50 11N50 QW-R502-462 11N-50 PDF

    11N-50

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		11N50 O-220 11N50 O-220F1 QW-R502-462 11N-50 PDF

    Contextual Info: AON6454A 150V N-Channel MOSFET General Description Product Summary The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AON6454A AON6454A PDF

    Contextual Info: AON6454A 150V N-Channel MOSFET General Description Product Summary The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AON6454A AON6454A PDF

    Contextual Info: KSM11N50CF/KSMF11N50CF 500V N-Channel MOSFET TO-220 TO-220F Features • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns)


    Original     		KSM11N50CF/KSMF11N50CF O-220 O-220F PDF

    Contextual Info: KSM13N50C/KSMF13N50C 500V N-Channel MOSFET TO-220 Features • • • • • • TO-220F 13A, 500V, RDS on = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


    Original     		KSM13N50C/KSMF13N50C O-220 O-220F PDF

    IRHF53Z30

    Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
    Contextual Info: PD - 93793A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)


    Original     		3793A IRHF57Z30 IRHF53Z30 IRHF54Z30 IRHF58Z30 1000K MIL-STD-750, MlL-STD-750, O-205AF IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30 PDF

    24v 12v 10A regulator

    Abstract: IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30
    Contextual Info: PD - 93793 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)


    Original     		IRHF57Z30 IRHF53Z30 IRHF54Z30 IRHF58Z30 1000K 24v 12v 10A regulator IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30 PDF

    Contextual Info: PD - 93793C IRHF57Z30 JANSR2N7491T2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary Part Number IRHF57Z30 IRHF53Z30 TECHNOLOGY ™ Radiation Level RDS(on) 100K Rads (Si) 0.045Ω 300K Rads (Si) 0.045Ω


    Original     		93793C IRHF57Z30 JANSR2N7491T2 MIL-PRF-19500/701 IRHF53Z30 JANSF2N7491T2 IRHF54Z30 JANSG2N7491T2 PDF

    Contextual Info: PD - 93793E IRHF57Z30 JANSR2N7491T2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary Part Number IRHF57Z30 IRHF53Z30 TECHNOLOGY ™ Radiation Level RDS(on) 100K Rads (Si) 0.045Ω 300K Rads (Si) 0.045Ω


    Original     		93793E IRHF57Z30 JANSR2N7491T2 MIL-PRF-19500/701 IRHF53Z30 JANSF2N7491T2 IRHF54Z30 JANSG2N7491T2 PDF

    IRHF53Z30

    Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
    Contextual Info: PD - 93793B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)


    Original     		93793B IRHF57Z30 IRHF53Z30 IRHF54Z30 IRHF58Z30 1000K MIL-STD-750, MlL-STD-750, O-205AF IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30 PDF

    FDB44N25

    Abstract: n-channel 250V power mosfet FDB44N25TM
    Contextual Info: UniFET TM FDB44N25 250V N-Channel MOSFET Features Description • 44A, 250V, RDS on = 0.069Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 47 nC)


    Original     		FDB44N25 FDB44N25 n-channel 250V power mosfet FDB44N25TM PDF

    FQA13N50C

    Contextual Info: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA13N50C FQA13N50C PDF

    FQA13N50C

    Contextual Info: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA13N50C FQA13N50C PDF

    Contextual Info: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA13N50C PDF

    STK621-051

    Abstract: STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031
    Contextual Info: Ordering number: EP35E Combining Power and Control, Sanyo Inverter Power IC Enables Easy Realization of Power Saving for Equipment To what extent can electrical equipment become environmentally friendly? One of the answers is power-saving and low-consumption power technology. Inverter technology


    Original     		EP35E 15-C2, STK621-051 STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031 PDF

    FQA13N50CF

    Contextual Info: TM FQA13N50CF 500V N-Channel MOSFET Features Description • 15A, 500V, RDS on = 0.48Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 43 nC)


    Original     		FQA13N50CF FQA13N50CF PDF

    FQB13N50C

    Abstract: FQI13N50C 13A500V
    Contextual Info: TM FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB13N50C/FQI13N50C FQB13N50C FQI13N50C 13A500V PDF

    FQPF13N50C

    Abstract: FQP13N50C FQPF Series
    Contextual Info: TM FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP13N50C/FQPF13N50C FQPF13N50C FQP13N50C FQPF Series PDF

    FQPF13N50C

    Abstract: FQP13N50C FQPF Series
    Contextual Info: TM FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP13N50C/FQPF13N50C FQPF13N50C FQP13N50C FQPF Series PDF