ISD-9200
Abstract: ISD-9201
Text: ISD-9200 Series SPDT Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough
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ISD-9200
ISD-9200
ISD-9201
ISD-9201
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isd 2100
Abstract: No abstract text available
Text: ISD-9900 Series SPST Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough
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ISD-9900
ISD-9901
ISD-9902
isd 2100
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ISD-9110
Abstract: ISD-9111 ISD-9112
Text: ISD-9110 Series SPST Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough
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ISD-9110
ISD-9110
ISD-9111
ISD-9112
Isol00
ISD-9111
ISD-9112
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LTC1619
Abstract: becker automotive ltc1680 LT1945 LTC1867 str 6753 data sheet str 6753 LTC1871 LTC3703 LT1786F
Text: 04.2006 オートモーティブ・エレクトロニクス・ソリューション ハイパフォーマンス・アナログ IC 昨今のオートモーティブ車載環境は高い入力電圧を受ける能力、広い動作温度範囲、効率の高
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ISO9001
QS9000
ISO14001
TS16949
ISO9001
HVAC5737
D-59387
D-70567
I-20156
S-191
LTC1619
becker automotive
ltc1680
LT1945
LTC1867
str 6753
data sheet str 6753
LTC1871
LTC3703
LT1786F
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Untitled
Abstract: No abstract text available
Text: PD - 94213A IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A
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4213A
IRFP254N
O-247
O-247AC
IRFPE30
IRFPE30
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STR 6753
Abstract: data sheet str 6753 RF3103 7805 12v to 5v 3a High Current Voltage Regulator mosfet 7805 TM 1628 driver display inverter STR 6753 LTC1964 7805 12v to 5v 1a 7805 IC
Text: Power Management & Wireless Solutions Power Management & Wireless Solutions ▼ Introduction Today’s handheld products require extremely small and low profile power management solutions. Consumers expect long battery life, so maximum efficiency is essential. And sensitive wireless receivers in close proximity to switching regulators pose potential
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I-20156
SE-164
STR 6753
data sheet str 6753
RF3103
7805 12v to 5v 3a
High Current Voltage Regulator mosfet 7805
TM 1628 driver display
inverter STR 6753
LTC1964
7805 12v to 5v 1a
7805 IC
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LTC1619
Abstract: STR 6753 LT3406 data sheet str 6753 LT1172 boost converter 60v 7805 LDO LT1170 boost converter 12v dc LT3406B-2 LT3406B LTC2602
Text: 03.2005 Automotive Electronics Solutions High Performance Analog ICs Linear Technology Automotive Awards Today’s automotive environment demands high input voltage capability, wide operating temperature ranges and efficient thermal management. Consumer expectations and
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D-59387
D-73230
I-20156
SE-164
LTC1619
STR 6753
LT3406
data sheet str 6753
LT1172 boost converter 60v
7805 LDO
LT1170 boost converter 12v dc
LT3406B-2
LT3406B
LTC2602
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035H
Abstract: IRFPE30
Text: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ
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IRFP254NPbF
O-247
O-247AC
IRFPE30
035H
IRFPE30
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IRFP254N
Abstract: 035H IRFPE30
Text: PD - 94213 IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A
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IRFP254N
O-247
O-247AC
IRFPE30
IRFP254N
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 94213A IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A
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4213A
IRFP254N
O-247
08-Mar-07
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IRFP254N
Abstract: No abstract text available
Text: IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating
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IRFP254N,
SiHFP254N
O-247
18-Jul-08
IRFP254N
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IRFP254N
Abstract: 035H IRFPE30
Text: PD - 94213A IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A
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4213A
IRFP254N
O-247
12-Mar-07
IRFP254N
035H
IRFPE30
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IRF (10A) 55V
Abstract: AN-994 IRFR2405 IRFU120 IRFU2405 R120 U120 IRFU2405PBF
Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω
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5369A
IRFR2405PbF
IRFU2405PbF
IRFR2405)
IRFU2405)
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRF (10A) 55V
AN-994
IRFR2405
IRFU120
IRFU2405
R120
U120
IRFU2405PBF
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IRFP254N
Abstract: No abstract text available
Text: IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating
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IRFP254N,
SiHFP254N
O-247
18-Jul-08
IRFP254N
|
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Untitled
Abstract: No abstract text available
Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω
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5369A
IRFR2405PbF
IRFU2405PbF
IRFR2405)
IRFU2405)
EIA-481
EIA-541.
EIA-481.
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IRF 260 N
Abstract: rectifier diode assembly diode 1600 rectifier HEXFET Power MOSFET IRF (10A) 55V IRF (10A) 55V P IRF N-Channel Power MOSFETs AN-994 IRFR2405 IRFU120
Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω
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5369A
IRFR2405PbF
IRFU2405PbF
IRFR2405)
IRFU2405)
EIA-481
EIA-541.
EIA-481.
IRF 260 N
rectifier diode assembly
diode 1600 rectifier
HEXFET Power MOSFET
IRF (10A) 55V
IRF (10A) 55V P
IRF N-Channel Power MOSFETs
AN-994
IRFR2405
IRFU120
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Untitled
Abstract: No abstract text available
Text: IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating
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IRFP254N,
SiHFP254N
O-247
12-Mar-07
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035H
Abstract: IRFPE30
Text: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ
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IRFP254NPbF
O-247
12-Mar-07
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 95369 IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω
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IRFR2405PbF
IRFU2405PbF
IRFR2405)
IRFU2405)
IRFR/U2405OPbF
O-252AA)
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: PD - 97688 AUTOMOTIVE GRADE AUIRFR2405 HEXFET Power MOSFET Features l ● l l l l l l l Advanced Planar Technology Dynamic dV/dT Rating Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax
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AUIRFR2405
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Untitled
Abstract: No abstract text available
Text: IRFR2405 IRFU2405 D-Pak IRFR2405 l l l l l l I-Pak IRFU2405 Surface Mount IRFR2405 Straight Lead (IRFU2405) Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D Description VDSS = 55V The D-Pak is designed for surface mounting using
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IRFR2405
IRFU2405
IRFR2405)
IRFU2405)
O-251AA)
IRFR/U2405
O-252AA)
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N65Z-Q Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high
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10N65Z-Q
10N65Z-Q
QW-R502-980.
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10N60K
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: IRFR2405 IRFU2405 l l l l l l D-Pak IRFR2405 Surface Mount IRFR2405 Straight Lead (IRFU2405) Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated I-Pak IRFU2405 Description The D-Pak is designed for surface mounting using
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IRFR2405
IRFU2405
IRFR2405)
IRFU2405)
O-251AA)
IRFR/U2405
O-252AA)
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