IS65 Search Results

IS658A

Abstract: IS659B ISTS658A ISTS659B
Contextual Info: IS658A IS659B SIDE LOOK MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 0.8 C 0.5 1.6 2.8 0.75 1.15 1.5 R 0.5 0.3 max 2.15 4.0 R 0.8 3.0 1 2 2 1 1.7 2.54 1 60° 0.15 0.8 1.4 0.5 min 0.45 0.4 0.8 2 ISTS658A ISTS659B DESCRIPTION

IS62WV6416DBLL-45TLI

Abstract: IS62WV6416DALL-55BLI IS62WV6416DBLL-45BLI 45TLA
Contextual Info: IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 15 mW typical operating 1.5 µW (typical) CMOS standby • TTL compatible interface levels

IS62C10248AL-55TLI

Abstract: IS62C10248AL-55MLI IS65C10248AL-55MLA3 MO-207 IS62C10248AL
Contextual Info: IS62C10248AL IS65C10248AL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES PRELIMINARY INFORMATION OCTOBER 2009 DESCRIPTION The ISSI IS62C10248AL/IS65C10248AL are high- • High-speed access time: 45ns, 55ns speed, 8M bit static RAMs organized as 1M words by

sd 0451 55

Abstract: IS65WV25616ALL IS65WV25616BLL IS65WV25616BLL-70TA3
Contextual Info: IS65WV25616ALL IS65WV25616BLL ISSI 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION JUNE 2006 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW typical operating 9 µW (typical) CMOS standby

IS62C25616BL

Contextual Info: IS62C25616BL, IS65C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM MARCH 2013 FEATURES • High-speed access time: 45 ns • Low Active Power: 50 mW typical • Low Standby Power: 10 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply

IS62WV102416BLL-25TI

Contextual Info: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL ISSI 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater

Contextual Info: ISSI IS65C1024AL PRELIMINARY INFORMATION AUGUST 2002 128K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70 ns • Low active power: 50 mW typical • Low standby power: 100 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: IS65WV12816ALL IS65WV12816BLL ISSI 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM SEPTEMBER 2006 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW typical operating 9 µW (typical) CMOS standby • TTL compatible interface levels

62wv1024

Contextual Info: IS62WV10248DALL/BLL IS65WV10248DALL/BLL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES PRELIMINARY INFORMATION MARCH 2009 DESCRIPTION The ISSI IS62WV10248DALL/ IS62WV10248DBLL are • High-speed access time: 45ns, 55ns high-speed, 8M bit static RAMs organized as 1M words

Contextual Info: IS650A IS651A MATCHED EMITTER DETECTOR PAIR PHOTO TRANSISTOR OUTPUT PACKAGES CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS650A IS651A 2.84 0.45 DESCRIPTION The IS650A Gallium Arsenide Infrared Emitting Diode and the IS651A(NPN Silicon Photo Transistor) are

Contextual Info: 1 of 2 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Emitter / Detector Pairs IS650A IS651A: Transistor Output IS652A IS653A: Darlington Output

Contextual Info: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MAY 2007 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW typical operating 9 µW (typical) CMOS standby • TTL compatible interface levels

55BA

Abstract: IS65WV12816BLL-55B2A2 65WV12816ALL
Contextual Info: IS65WV12816ALL IS65WV12816BLL ISSI 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION JULY 2002 FEATURES Option A2: 40 to +105oC • High-speed access time: 55ns, 70ns Option A3: 40 to +125oC • CMOS low power operation –36 mW typical operating

IS62LV256AL-20T

Abstract: IS62LV256AL-20TL IS62LV256AL-45T IS62LV256AL-45TL IS65LV256AL IS62LV256AL IS62LV256AL-20J IS62LV256AL-20JL
Contextual Info: IS65LV256AL IS62LV256AL ISSI 32K x 8 LOW VOLTAGE CMOS STATIC RAM OCTOBER 2006 FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 µW typical CMOS standby — 50 mW (typical) operating

Contextual Info: IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES •฀ High-speed฀access฀time:฀35ns,฀45ns,฀55ns •฀ CMOS฀low฀power฀operation: ฀ 15฀mW฀ typical ฀operating ฀ 1.5฀µW฀(typical)฀CMOS฀standby

Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES SEPTEMBER 2008 DESCRIPTION The฀ISSI฀IS65WV25616ALL/IS65WV25616BLL฀฀are฀฀high- •฀ High-speed฀access฀time:฀55ns,฀70ns •฀ CMOS฀low฀power฀operation

IS62C10248AL

Contextual Info: IS62C10248AL IS65C10248AL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES PRELIMINARY INFORMATION DECEMBER 2010 DESCRIPTION The ISSI IS62C10248AL/IS65C10248AL are high- • High-speed access time: 45ns, 55ns speed, 8M bit static RAMs organized as 1M words by

Contextual Info: IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns DECEMBER 2010 DESCRIPTION The ISSI IS62/65WV1288DALL and IS62/65WV1288DBLL are high-speed, 1M bit static RAMs organized as

Contextual Info: IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBRUARY 2012 DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are FEATURES • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words

Contextual Info: IS62C5128BL, IS65C5128BL 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 45ns • Low Active Power: 50 mW typical • Low Standby Power: 10 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply

Contextual Info: IS62WV10248EALL/BLL IS65WV10248EALL/BLL PRELIMINARY INFORMATION JULY 2014 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •       High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW typical operating – 12 µW (typical) CMOS standby

IS65C256

Abstract: IS65C256-20TA1 IS65C256-20TA2 IS65C256-20TA3 IS65C256-20UA1 IS65C256-20UA2 IS65C256-20UA3
Contextual Info: ISSI IS65C256 PRELIMINARY INFORMATION SEPTEMBER 2002 32K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION FEATURES • High-speed access time: 20 ns • Low active power: 200 mW typical • Low standby power: 250 µW (typical) CMOS standby • Fully static operation: no clock or refresh

65WV12816ALL

Abstract: IS65WV12816ALL IS65WV12816BLL 55BA
Contextual Info: IS65WV12816ALL IS65WV12816BLL ISSI 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION JUNE 2006 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW typical operating 9 µW (typical) CMOS standby