BTS 132 SMD
Abstract: No abstract text available
Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package
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PD57002-E
PowerSO-10
BTS 132 SMD
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PD57045S
Abstract: 700B AN1294 PD57045
Text: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,
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PD57045
PD57045S
PD57045
PowerSO-10RF.
PD57045S
700B
AN1294
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AN1294
Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Text: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD57002
PD57002S
PowerSO-10RF
PD57002
PowerSO-10
AN1294
PD57002S
BTS 472 E
0927 TRANSISTOR
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AN1294
Abstract: PD55008 PD55008S 11 0741
Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD55008
PD55008S
PD55008
PowerSO-10RF.
AN1294
PD55008S
11 0741
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transistor C640
Abstract: transistor bf 179 transistor c640 npn START499 START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368
Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that
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START499
42GHz
OT343
START499TR
START499
OT343
transistor C640
transistor bf 179
transistor c640 npn
START499TR
ST 7 L05
RF NPN power transistor 2.5GHz
Ko 368
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J-STD-020B
Abstract: PD55003L
Text: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION
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PD55003L
PD55003L
J-STD-020B
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945 TRANSISTOR
Abstract: 700B AN1294 PD57018 PD57018S
Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE
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PD57018
PD57018S
PowerSO-10RF
PD57018
945 TRANSISTOR
700B
AN1294
PD57018S
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AN0010
Abstract: AN0017 CHA2069-QDG MO-220 RO4003 ro4003 rogers microstrip
Text: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.
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CHA2069-QDG
18-30GHz
CHA2069-QDG
18-30GHz
20dBm
DSCHA2069QDG6332
AN0010
AN0017
MO-220
RO4003
ro4003 rogers microstrip
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PD57002-E
Abstract: BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PD57002
Text: PD57002-E PD57002S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package
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PD57002-E
PD57002S-E
960MHz
PowerSO-10RF
PD57002
PowerSO-10
PD57002-E
BTS 132 SMD
PD57002S
PD57002S-E
AN1294
JESD97
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SOT343 C5
Abstract: SPICE 2G6 START405 START405TR
Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR
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START405
42GHz
OT343
OT343
START405TR
START405
500MHz-5GHz
SOT343 C5
SPICE 2G6
START405TR
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BF295
Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that
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START450
19dBm
42GHz
OT343
OT343
START450TR
START450
500MHz-5GHz
BF295
c785
C785 transistor
BF 295
transistor BF 451
START450TR
transistor C740
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AN1294
Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package
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PD57006-E
PD57006S-E
945MHz
PowerSO-10RF
PD57006
PowerSO-10RF.
PD570and
AN1294
PD57006-E
PD57006S
PD57006S-E
PD57006STR-E
PD57006TR-E
PD57006E
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transistor smd po3
Abstract: PD55003 AN1294 PD55003S
Text: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55003
PD55003S
PD55003
PowerSO-10RF.
transistor smd po3
AN1294
PD55003S
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A2069
Abstract: AN0017 CHA2069-QDG MO-220
Text: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.
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CHA2069-QDG
18-30GHz
CHA2069-QDG
A2069
18-30GHz
20dBm
DSCHA2069QDG9322-
A2069
AN0017
MO-220
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2SC4864
Abstract: sanyo lc 15011 ZS22 ic 3586
Text: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)
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2SC4864
sanyo lc 15011
ZS22
ic 3586
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CQ 817
Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.
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EN4580
2SC4860
CQ 817
cq 0765
TRANSISTOR cq 817
ic 4580
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plate capacitor
Abstract: 8038 block diagram
Text: 4 I9 Ö S E M I C O N D U C T O R I N C TOSÌÌ I R E L E S S C O M M U N I C A T I O N S TQ9111 Block Diagram 0.3 0.1 V D D V D D ID S S ID S S 1 2 1 -8 GHz Amplifier RF GND1 RF RF RF GND2 GND3 GND4 Product Description Features The TQ9111 is a general-purpose cascadable
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TQ9111
TQ9111
3625ASW
plate capacitor
8038 block diagram
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TQ9121F
Abstract: circuit diagram of wireless system
Text: WIRELESS COMMUNICATIONS TQ9121F Block Diagram Low-Noise Amplifier 6 OUT Features Product Description The TQ9121 Low-Noise Amplifier is part of TriQuinfs MMIC Downconverter Building Block family. Intended for use in the first stages of a Low-Noise Receiver front end, the
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TQ9121F
TQ9121
3625ASW
TQ9121F
circuit diagram of wireless system
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SL2128
Abstract: MRF965 MRF961 BFRC96 case 317-01
Text: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro
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BFR96
BFRC96
MRF961
MRF962
MRF965
BFR96,
BFRC96,
MRF961,
SL2128
MRF965
case 317-01
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jis z 0237
Abstract: l 0734 HP11590B
Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz
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MRF5811LT1/D
MRF5811LT1,
2PHX34607Q
jis z 0237
l 0734
HP11590B
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shock vk200
Abstract: marking c7 sot-23 MMBFU310LT1
Text: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET "Transistor N-Channel 2 SOURCE M MBFU310LT1 Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 mAdc
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MMBFU310LT1/D
MBFU310LT1
OT-23
236AB)
MMBFU310LT1
shock vk200
marking c7 sot-23
MMBFU310LT1
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SU 179 transistor
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz
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RF173/D
SU 179 transistor
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Nippon capacitors
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRFIC2401/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC2401 2.4 GHz GaAs D ow nconverter The MRFIC2401 is a GaAs low-noise amplifier and downmixer in a low-cost 16 lead plastic package designed for use in the 2.4 to 2.5 GHz IndustrialScientific-Medical ISM band. The design is optimized for efficiency at 5.0 Volt
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MRFIC2401/D
MRFIC2401
2PHX34801Q-0
22034C
Nippon capacitors
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johanson trim
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m
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RF160/D
johanson trim
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