Untitled
Abstract: No abstract text available
Text: sam tec I* Features: •* Direct irterfa ce with PC carc End snrooi ■ Accepts 0,79mm .031” or (1,57mm) .062” csrds - (1 2 7 m n ) .050" pitch * 50 to 15:0 contacts • Available Fail 1998 Side shroud id,79m m ) , 0 3 ) * or 1 ’” ' ? 71 card APPLICATIO N SPEC IFIC INTERFACES
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t-800-S
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6b8g
Abstract: Tube 6B7
Text: 2B7, 6B8 g S B ? TUHG-SOL D U O -D IO D E PENTODE A M P L I F I E R COATED UN I PO TENTIAL CATHODE 2B7 - 2 . 5 VOLTS 0 . 8 AMPERE 6B7 - 6 . 3 VOLTS 0 . 3 AMPERE 6B86 - 6 . 3 VOLTS 0 . 3 AMPERE AC OR DC G L A S S BU LB 2 B 7 , 6B 7 SMALL 6B8G METAL SK IRTED
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M8-210
6b8g
Tube 6B7
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mark AT0
Abstract: ERA15 T151 T810 AT-05 general purpose diode marking code -06 general purpose diode marking code -08
Text: ERA15 1 .OA Outline Drawings GENERAL USE RECTIFIER DIODE * Features • f c / J '8 M c fc *> , 5 m e 7 f m 3 T O Ultra small package, possible for 5mm pitch automatic IS iT F • Marking insertion. • Sif&IRte High reliability A 7 - 3- K : Ö Color code : White
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ERA15
19S24
95t/R89)
mark AT0
T151
T810
AT-05
general purpose diode marking code -06
general purpose diode marking code -08
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Untitled
Abstract: No abstract text available
Text: 50 V d c, 603 S eries -irTELEDYNE RELAYS CHARACTERISTIC CURVES 20 30 40 50 20 60 60 LOAD CURRENT VS TEMPERATURE 603-2 FIGURE 1 FIGURE 2 0.60 I CONTROL VOLTAGE (Vdc) SURG E DURATION (ms) - NON-REPETITIVE INPUT CURRENT VS CONTROL VOLTAGE MAXIMUM SURG E A S FUNCTION O F LOAD VOLTAGE
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0000T44
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9761ARS
Abstract: d976
Text: ANALOG DEVICES dial 10-Bt TxDac * with2x Irterpdation Rlters Æ0761 FEATURES Com plete 10-Bit, 40 MSPS Dual Transmit DAC Excellent Gain and Offset Matching Differential N onlinearity Error: 0.5 LSB Signal-to-Noise and Distortion Ratio: 58 dB Spurious-Free Dynamic Range: -6 5 dB
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10-Bit,
28-Lead
10-Bt
AB761
RS-28)
55553ip
9761ARS
d976
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ps3000
Abstract: No abstract text available
Text: 1500 WATTRM SERIES FRONT ENDS FEATURES Like the rest of the RM Series I for t Encs these W ide ac in p u t range 1500 watt supplies are designed ,o support high-availability applications suet, as mission- P ow er fa c to r corre cte d critical computing. An optional irterna' ORing
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PN93-067EPS
DS93-227EPS
PS3000
PN93-066EPS
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Untitled
Abstract: No abstract text available
Text: SOLI» STATE DEVICES INC flBbbon oooas^D t. 3SE J> Rectifiers Continued Solid State Devices, Irte. 14849 Firestone Boulevard • La Mirada, CA 90638 f Phone (213)921-9660 • Fax (714)522-7424 1 25°C Electrical Characteristics mm ISSI Package Style - -• “-3 Square T;ib D
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SHF1306SM
SDR1304SM
SDR1305SM
SDR1306SM
SPD502SM
SPD503SM
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RADIOTRON
Abstract: rca company Rectifier Tubes "Rectifier Tube" RCA tube
Text: HALF-WAVE HIGH-VACUUM RECTIFIER FOR U S E W ITH CATHO PE-RAY T U B E S _ Tungsten 2.5 5.0 Fi 1ament Vo I tage Current a-c v o lt s amp. 7* to 7-5/8" 1-13/16" T-H Medium Metal S k irte d Med i urn 4-Pi n O v e ra l1 Length Maximum Diameter Bui b
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A37 diode
Abstract: ERA15 diode a37 marking code ca MARKING CODE A37 general purpose diode marking code -06 37A37
Text: E R A 1 5 i .oa M JE N 'ii : Outline Drawings G EN ER A L U SE R E C T IF IE R DIODE I Features • jS'J'Sttfctf), 5 m m li7 f S*& ff A * * WAS : Marking Ultra small package, possible for 5mm pitch automatic insertion. • Sf&IRte High reliability A 7 -3 —K : Ö
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ERA15
ERAI5-08
A37 diode
diode a37
marking code ca
MARKING CODE A37
general purpose diode marking code -06
37A37
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Untitled
Abstract: No abstract text available
Text: In-8sr1sa Adaptors • 1&0 QHz ‘£! 8780-Q0BMI ntaft M M M M ML Arnold p l^ otonpi tto Piit Nunbar autHfrem • o tto -o a tat Numb* 3WMWMI r H r M M d a H _ _ _ _ _L _n r. gdd ^iefc change die m i N irter n ib ten 201
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8780-Q0BMI
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Untitled
Abstract: No abstract text available
Text: irteT P K IU M N IM V 82596CA STATION DIAGNOSTICS AND SELF-TEST The 8 2 5 9 6 provides a large set of diagnostic and network m anagem ent functions. Th ese include inter nal and external loopback and time domain reflectometry for locating fault points in the network cable.
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82596CA
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full subtractor circuit using decoder and nand ga
Abstract: full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005
Text: VLSI T e c h n o l o g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • A vaila b le in th irte e n sizes from 960 to 54,000 usable gates The V G T 200 Series is an advanced, high performance C M O S gate array
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VGT200
400-018-A-028
full subtractor circuit using decoder and nand ga
full subtractor circuit using nand gates
PT6001
7474 d-flip flop
PT6011
PT6021
VLSI Technology
Kt 0912
PC6D10
PT6005
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Untitled
Abstract: No abstract text available
Text: |dy Irtegiated. Dev xe TechnoJogy, lie . CMOS Triple Bus SyncFlFO With Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1 , 02 4 x3 6 x 2 PRELIMINARY IDT723626 IDT723636 IDT723646 NOTE: There are two errata notices at the end of this data sheet. The corrections have already been incorporated
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IDT723626
IDT723636
IDT723646
18-bit
18-bits
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Untitled
Abstract: No abstract text available
Text: d r a w in g m ade : in A m e r ic a n .+•1973 BY A M p W S PRO DUCTS C O V irtE D 3*4- 4P-' « • - r r.%-r.4r i « ja r ri . * ^ £ rf* 1 ZONE LTR OESCplPTKOM _. . % A ' ^^Ü^WUTOT^<LOVAfiQ,oRAT\6l4^ : ’ r""T-i B REY-PEPTECM P C '7 t+ iL " ^ T ' ; c r .i? œ ^ :.G - 3 C 4 4 :
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Untitled
Abstract: No abstract text available
Text: irtef 3636 16K 2K x 8 BIPOLAR PROM 3636-1 65 ns M ax. 3636 80 ns Max. • Three-State Outputs ■ Fast Access Time: 50ns Typically ■ Low Power Dissipation: 0.05mW/Bit Typically ■ Three Chip Select Inputs for Easy Memory Expansion ■ ± 1 0 % Power Supply Tolerance
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05mW/Bit
24-Pin
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8L85
Abstract: No abstract text available
Text: v ' DPS128X24V3 - f . Dense-Pac Microsystems. Irte. ^ CERAMIC 128K X 24 CM O S SRAM VERSA-STACK PRELIMINARY DESCRIPTION: The D P S 128X 24V 3 "VERSA-STACK" module is a re v o lu tio n a ry n ew m e m o ry subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless
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DPS128X24V3
DPS128X24V3
30A044-30
8L85
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VN2224
Abstract: VN2222
Text: VN2222 VN2224 Supertex irte. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVdgs ^DS O N I d <ON) (max) (min) 220V 1.250 240V 1.25S2 Order Number / Package TO-92 20-Pin C-Dip 5.0A - VN2222NC - 5.0A VN2224N3 - VN2224ND Die+ r MIL visual screening available
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VN2222
VN2224
VN2224N3
20-Pin
VN2222NC
VN2224ND
VN2222/VN2224
VN2224
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072x18 262,144x18 PRELIMINARY IDT72V295 IDT72V2105 Irtegiated D eviœ Technology, lie . FEATURES: • Choose among the following memory organizations: IDT72V295 131,072x 18 IDT72V2105 262,144x 18 • Pin-compatible with the IDT72V255/72V265 and the
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072x18
144x18
IDT72V295
IDT72V2105
IDT72V2105
IDT72V255/72V265
IDT72V275/72V285
PN64-1)
72V295
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 PRELIMINARY IDT72V261 LA IDT72V271 LA Irtegiated D eviœ Technology, lie . FEATURES: • Choose among the following memory organizations: IDT72V261 LA 1 6 ,3 8 4 x 9 IDT72V271 LA 3 2 ,7 6 8 x 9 • P in -c o m p a tib le w ith th e ID T 7 2 V 2 8 1 /7 2 V 2 9 1 and
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384x9
IDT72V261
IDT72V271
IDT72V2101
IDT72261/72271
60ns2+
150mA
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72V3680
Abstract: No abstract text available
Text: Irtegiated D eviœ Technology, lie . 3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO 4,096 x 36 8,192 x 36 16,384x36 32,768 x 36 65,536 x 36 131,072x36 FEATURES: • Choose among the following memory organizations: IDT72V3660 4,096 x 36 IDT72V3670 8 ,1 9 2x3 6
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36-BIT
384x36
072x36
IDT72V3660
IDT72V3670
IDT72V3680
IDT72V3690
IDT72V36100
IDT72V36110
72V3680
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YG801C06R
Abstract: fuji electric marking fuji lot number
Text: This material and the Informa non herein fs the property Fuji Elee irte Co .Ltd. They shall be neither reproduced, copie o. lent, or disclosed in any way whatsoever for the use of any third psrtynor used for the manufacturing purposes without the express written consent of Fup Electric Co_ Ltd.
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YG801C06R
H04-004-07
YG801C06R
fuji electric marking
fuji lot number
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Untitled
Abstract: No abstract text available
Text: A SFÜ lO Ptlllt Advance information 3.3V 128Kx8 lnTelliwatt'v low pow er CMOS SRAM Features • • • • irtelliw a t t activ e pow e r re d u c tio n c irc u itry 2 ,7V to 3 ,6V o p e ra tin g la n g e O rg a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b it s
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128Kx8
AS7C31024LL
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Matched SP3T RF Switch 20-1500 MHz SW-163 V2.00 Features DI-2 • Iitem aH y Terni jnated • Irte g ra lT T L D riv er • Low L o ss - 0 .9 dB T y p ic a l • M IL-5TD -883 S c ie e n iig A v aih b Je 0.97 2 4 .6 ± 0 .5 " _ £ ( 5 . 1) '
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SW-163
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92C605
Abstract: RADIOTRON triode rca company Scans-0017338
Text: DIODE-TRIODE-POWER AMPLIFIER PENTODE F i 1 ament C o a te d 1 .4 d -c v o lt s V o lt a g e amp. 0.1 C u rre n t Maxim um O v e r a l 1 L e n g t h 3 -5 / 1 6 " 2 -3 / 4 " Maxim um S e a t e d H e ig h t Maxim um D ia m e t e r 1 -5 / 1 6 " B u lb T -9 S k irte d M in ia t u r e - S t y l e C
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92C-6058
92C-6059
92C605
RADIOTRON
triode
rca company
Scans-0017338
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