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    IRGP4760PBF Price and Stock

    Infineon Technologies AG IRGP4760PBF

    IGBT 650V TO-247
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    Rochester Electronics LLC IRGP4760PBF

    IGBT 650V 90A TO247AC
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    DigiKey IRGP4760PBF Tube 125
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    International Rectifier IRGP4760PBF

    IRGP4760 - Discrete IGBT without Anti-Parallel Diode '
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    Rochester Electronics IRGP4760PBF 2,875 1
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    IRGP4760PBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGP4760PBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 650V TO-247 Original PDF

    IRGP4760PBF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C n-channel G Gate C Collector Features E Emitter Benefits Low VCE(ON) and Switching Losses


    Original     		PDF IRGP4760PbF IRGP4760-EPbF IRGP4760â 247ADÂ IRGP4760PbFÂ 247ACÂ O-247AC JESD47F) O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C n-channel G Gate C Collector Features E Emitter


    Original     		PDF IRGP4760PbF IRGP4760-EPbF IRGP4760â 247ADÂ IRGP4760PbFÂ 247ACÂ IRGP4760PbF/IRGP4760-EPbF O-247AC JESD47F) O-247AD