IRGCC50ME
Abstract: IRGPC50M
Text: PD-9.1423 TARGET IRGCC50ME IRGCC50ME IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC50ME
IRGCC50ME
IRGPC50M
IRGPC50M
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IRGPC50M
Abstract: IRGCC50ME
Text: Previous Datasheet Index Next Data Sheet PD-9.1423 TARGET IRGCC50ME IRGCC50ME IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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Original
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IRGCC50ME
IRGCC50ME
IRGPC50M
IRGPC50M
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PDF
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irgpc50m
Abstract: No abstract text available
Text: PD-9.1423 International IQ R Rectifier IRGCC50ME TARGET IRGCC50ME IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5” Wafer Electrical Characteristics Wafer Form Param eter VCE (on) Description Guaranteed (Min/Max) Coliector-to-Emitter Saturation Voltage
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OCR Scan
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PD-9-1423
IRGCC50ME
250pA,
irgpc50m
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PDF
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