Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRG7PH46UDPBF Search Results

    SF Impression Pixel

    IRG7PH46UDPBF Price and Stock

    Infineon Technologies AG IRG7PH46UDPBF

    IGBT 1200V 40A 390W TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG7PH46UDPBF Tube 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.28338
    • 10000 $6.28338
    		Buy Now
    Rochester Electronics IRG7PH46UDPBF 36 1
    • 1 $5.93
    • 10 $5.93
    • 100 $5.57
    • 1000 $5.04
    • 10000 $5.04
    		Buy Now

    International Rectifier IRG7PH46UDPBF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRG7PH46UDPBF 8
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    ComSIT USA IRG7PH46UDPBF 187
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IRG7PH46UDPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH46UDPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 40A 390W TO247AC Original PDF

    IRG7PH46UDPBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH46UDPbF IRG7PH46UD-EP O-247AD

    IRG7PH46UDPBF

    Abstract: 028005
    Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF 7498A IRG7PH46UDPbF IRG7PH46UD-EP O-247AD 028005

    CECA

    Abstract: MS-2758
    Text: 技术文章 MS-2758 利用数字隔离器技术增强工业电 机控制性能 作者：Dara O'Sullivan 系统工程师 和Maurice Moroney (技术营销经理)，ADI公司 隔离类型简介 隔离用户及敏感电子部件是电机控制系统的重要考虑事


    Original     		PDF MS-2758 MS-2576æ NGTB15N60S1EGï TA12881sc-0-11/14 CECA MS-2758

    IRG7PH46UDPBF

    Abstract: 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150
    Text: PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH46UDPbF IRG7PH46UD-EP O-247AD IRG7PH46UDPBF 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150

    irg7ph46

    Abstract: 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A IRG7PH46UPBF 8200 T igbt driver applications
    Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 6305A IRG7PH46UPbF IRG7PH46U-EP O-247AC O-247AD IRG7PH46NE irg7ph46 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A 8200 T igbt driver applications

    Untitled

    Abstract: No abstract text available
    Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF 7498A IRG7PH46UDPbF IRG7PH46UD-EP O-247AD

    IRG7PH46UPBF

    Abstract: 600v 20a IGBT driver ir igbt 1200V 40A 96305 igbt 40A 600V C-150 9630
    Text: PD - 96305 IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH46UPbF IRG7PH46U-EP O-247AD IRG7PH46UPBF 600v 20a IGBT driver ir igbt 1200V 40A 96305 igbt 40A 600V C-150 9630

    Untitled

    Abstract: No abstract text available
    Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 6305A IRG7PH46UPbF IRG7PH46U-EP O-247AD