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IRG7PH42UDPBF Price and Stock

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Infineon Technologies AG IRG7PH42UDPBF IGBT TRENCH 1200V 85A TO247AC
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DigiKey	IRG7PH42UDPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	IRG7PH42UDPBF			53 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRG7PH42UDPBF Electronic Component
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ComSIT USA	IRG7PH42UDPBF		38			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRG7PH42UDPBF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG7PH42UDPBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 85A 320W TO247AC		Original	PDF
IRG7PH42UDPBF		International Rectifier	1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package		Original	PDF

IRG7PH42UDPBF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IPM PLASMA Abstract: 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B Text: IRAM \| Selection Guide Product Line Overview IRAM Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and	Original	PDF	SIP-05 O-247AC IRG7PH30K10D IRGP20B120U-EP IRG4PH50KDPBF O-220AB; O-220 IPM PLASMA 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B
IRG7PH42UPBF Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U Text: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	6233A IRG7PH42UPbF IRG7PH42U-EP O-247AD IRG7PH42UPBF IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
Untitled Abstract: No abstract text available Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	PDF	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
ci 4946 Abstract: IRG7PH42UDPBF 4946 irg7ph42ud C-150 IRG7PH42UD-EP irg7ph42ud-e Text: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	97391B IRG7PH42UDPbF IRG7PH42UD-EP O-247AD ci 4946 IRG7PH42UDPBF 4946 irg7ph42ud C-150 IRG7PH42UD-EP irg7ph42ud-e
ci 4946 Abstract: IRG7PH42UD-EP irg7ph42ud-e IRG7PH42UDPBF Text: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	97391B IRG7PH42UDPbF IRG7PH42UD-EP O-247AD ci 4946 IRG7PH42UD-EP irg7ph42ud-e
IRG7PH42U-EP Abstract: 124 transistor Text: PD - 96233 IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	IRG7PH42UPbF IRG7PH42U-EP O-247AD IRG7PH42U-EP 124 transistor
ci 4946 Abstract: CT4-200 irg7ph42udpbf C-150 IRG7PH42UD-EP Text: PD - 97391A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	7391A IRG7PH42UDPbF IRG7PH42UD-EP O-247AD ci 4946 CT4-200 irg7ph42udpbf C-150 IRG7PH42UD-EP
Untitled Abstract: No abstract text available Text: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	97391B IRG7PH42UDPbF IRG7PH42UD-EP O-247AD
irg7ph42upbf Abstract: marking code 5339 Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD marking code 5339