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    Infineon Technologies AG IRG7PH37K10DPBF

    IGBT 1200V 45A TO-247AC
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    International Rectifier IRG7PH37K10DPBF

    Discrete IGBT with Anti-Parallel Diode
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    Rochester Electronics IRG7PH37K10DPBF 2,437 1
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    ComSIT USA IRG7PH37K10DPBF 75
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    IRG7PH37K10DPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH37K10DPBF
    		International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 45A 216W TO247AC Original PDF

    IRG7PH37K10DPBF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E


    Original     		IRG7PH37K10DPbF IRG7PH37K10D-EPbF IRG7PH37K10DPbFÂ 247ACÂ IRG7PH37K10Dâ 247ADÂ O-247AC O-247AD PDF

    Contextual Info: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E


    Original     		IRG7PH37K10DPbF IRG7PH37K10D-EPbF IRG7PH37K10DPbFÂ 247ACÂ IRG7PH37K10Dâ 247ADÂ O-247AC O-247AD PDF