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    IRG7PH35UD1M Search Results

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    IRG7PH35UD1M Price and Stock

    Infineon Technologies AG IRG7PH35UD1MPBF

    IGBT 1200V 50A 179W TO247AD
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    DigiKey IRG7PH35UD1MPBF Tube
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    Rochester Electronics LLC IRG7PH35UD1MPBF

    IGBT W/ULTRA-LOW VF DIODE FOR IN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG7PH35UD1MPBF Bulk 101
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    International Rectifier IRG7PH35UD1MPBF

    IRG7PH35 - Discrete IGBT with Anti-Parallel Diode '
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    Rochester Electronics IRG7PH35UD1MPBF 74,704 1
    • 1 $2.86
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    • 100 $2.69
    • 1000 $2.43
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    IRG7PH35UD1M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH35UD1MPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 179W TO247AD Original PDF

    IRG7PH35UD1M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG7PH35UD1MPBF

    Abstract: No abstract text available
    Text: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		PDF IRG7PH35UD1MPbF 1300Vpk O-247AD TD-020Dâ IRG7PH35UD1MPBF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		PDF IRG7PH35UD1M 1300Vpk

    transistor A6A

    Abstract: 76T marking transistor A6A N
    Text: PD - 97794 IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		PDF IRG7PH35UD1M 1300Vpk O-247AC transistor A6A 76T marking transistor A6A N

    irg7ph35u

    Abstract: irg7ph35 ir igbt 1200V 40A 600v 20a IGBT
    Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		PDF IRG7PH35UD1M 1300Vpk TD-020D irg7ph35u irg7ph35 ir igbt 1200V 40A 600v 20a IGBT