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    IRFZ48 MOSFET DRIVER Search Results

    IRFZ48 MOSFET DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK421G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    IRFZ48 MOSFET DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF530S

    Abstract: IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL
    Text: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET


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    IRFZ48 IRFZ48RSPbF IRFZ48RLPbF EIA-418. IRF530S IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL PDF

    IRFZ48

    Abstract: IRFZ48R
    Text: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications


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    IRFZ48R IRFZ48 12-Mar-07 IRFZ48 IRFZ48R PDF

    IRFZ48

    Abstract: IRF530S IRFZ48RS IRL3103L IRFZ48RL
    Text: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET


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    IRFZ48 IRFZ48RSPbF IRFZ48RLPbF 12-Mar-07 IRFZ48 IRF530S IRFZ48RS IRL3103L IRFZ48RL PDF

    IRFZ48RL

    Abstract: No abstract text available
    Text: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET


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    IRFZ48 IRFZ48RSPbF IRFZ48RLPbF 08-Mar-07 IRFZ48RL PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications


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    IRFZ48R IRFZ48 08-Mar-07 PDF

    IRFZ48

    Abstract: IRFZ48R
    Text: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications


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    IRFZ48R IRFZ48 Th252-7105 IRFZ48 IRFZ48R PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFZ48RL

    Abstract: No abstract text available
    Text: PD - 94074 IRFZ48RS IRFZ48RL HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D VDSS = 60V RDS on = 0.018Ω


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    IRFZ48RS IRFZ48RL IRFZ48 08-Mar-07 IRFZ48RL PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRFZ48

    Abstract: SiHFZ48 SiHFZ48-E3 IRFZ48 MOSFETs
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 O-220 O-220 18-Jul-08 IRFZ48 SiHFZ48-E3 IRFZ48 MOSFETs PDF

    IRFZ48

    Abstract: IRFZ48RL IRFZ48RS IRFZ44RL
    Text: PD - 94074 IRFZ48RS IRFZ48RL HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D VDSS = 60V RDS on = 0.018Ω


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    IRFZ48RS IRFZ48RL IRFZ48 IRFZ48 IRFZ48RL IRFZ48RS IRFZ44RL PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 O-220 O-220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRFZ48

    Abstract: SiHFZ48 SiHFZ48-E3
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 O-220 O-220 18-Jul-08 IRFZ48 SiHFZ48-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IEC 269-5

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 0.018 110 29 36 Single D DESCRIPTION S Third generation Power MOSFETs from Vishay utilize


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    IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 18-Jul-08 IEC 269-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT


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    IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L IRFZ48S/SiHFZ48S) IRFZ48L/SiHFZ48L) 12-Mar-07 PDF

    IRFZ48

    Abstract: IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G G D S Available RoHS*


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    IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 18-Jul-08 IRFZ48 IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S-E3 SiHFZ48STL PDF

    IRFZ48L

    Abstract: IRFZ48S IRFZ48STRL SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT


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    IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 18-Jul-08 IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48L-E3 SiHFZ48S-E3 SiHFZ48STL PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)


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    IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 2002/95/EC. PDF