Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFY9130CM Search Results

    SF Impression Pixel

    IRFY9130CM Price and Stock

    Infineon Technologies AG IRFY9130CM

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IRFY9130CM 100
    • 1 -
    • 10 -
    • 100 $250.8
    • 1000 $250.8
    • 10000 $250.8
    Buy Now

    IRFY9130CM Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY9130CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9130CM International Rectifier Power MOSFET Original PDF
    IRFY9130CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9130CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRFY9130CM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International


    Original
    PDF PD-91293C IRFY9130C, IRFY9130CM O-257AA) IRFY9130C O-257AA 5M-1994. O-257AA.

    HEXFET Power MOSFET P-Channel

    Abstract: IRFY9130C IRFY9130CM
    Text: Provisional Data Sheet No. PD 9.1293A IRFY9130CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.3Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original
    PDF IRFY9130CM HEXFET Power MOSFET P-Channel IRFY9130C IRFY9130CM

    q 1363

    Abstract: No abstract text available
    Text: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International


    Original
    PDF PD-91293C IRFY9130C, IRFY9130CM O-257AA) IRFY9130C IRFY9130CM inverte16 5M-1994. O-257AA. q 1363

    TRANSISTOR 112a

    Abstract: IRFY9130C IRFY9130CM
    Text: PD - 91293B POWER MOSFET THRU-HOLE TO-257AA IRFY9130C,IRFY9130CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International


    Original
    PDF 91293B O-257AA) IRFY9130C IRFY9130CM IRFY9130C IRFY9130C, -140A/ -100V, TRANSISTOR 112a IRFY9130CM

    IRFY9130C

    Abstract: IRFY9130CM P-channel MOSFET 100V, 10 Amps
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1293A IRFY9130CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.3Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original
    PDF IRFY9130CM IRFY9130C IRFY9130CM P-channel MOSFET 100V, 10 Amps

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original
    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRFY9130

    Abstract: IRFY9130C IRFY9130CM IRFY9130M
    Text: PD - 94195 POWER MOSFET THRU-HOLE TO-257AA IRFY9130,IRFY9130M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130 0.3 Ω -11.2A Glass IRFY9130M 0.3 Ω -11.2A Glass HEXFET® MOSFET technology is the key to International


    Original
    PDF O-257AA) IRFY9130 IRFY9130M IRFY9130 IRFY9130, -140A/ -100V, O-257AA IRFY9130C IRFY9130CM IRFY9130M

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original
    PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original
    PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


    Original
    PDF

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


    Original
    PDF IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


    Original
    PDF IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi­


    OCR Scan
    PDF IRFY9130CM

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan
    PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034