IRFY9130 Search Results

IRFY9130 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFY9130	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY9130	Semelab	P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS	Original	PDF
IRFY9130	International Rectifier	HEXFET Transistors	Scan	PDF
IRFY9130	International Rectifier	Government / Space Products - High Reliability Power MOSFETS	Scan	PDF
IRFY9130C	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY9130C	Semelab	P-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package	Original	PDF
IRFY9130C	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFY9130CM	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY9130CM	International Rectifier	Power MOSFET	Original	PDF
IRFY9130CM	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY9130CM	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFY9130M	International Rectifier	100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY	Original	PDF
IRFY9130M	Semelab	P-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package	Original	PDF
IRFY9130M	International Rectifier	Government / Space Products - High Reliability Power MOSFETS	Scan	PDF

IRFY9130M	International Rectifier	HEXFET Transistors	Scan	PDF

IRFY9130 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFY9130 Abstract: IRFY9130C IRFY9130CM IRFY9130M Text: PD - 94195 POWER MOSFET THRU-HOLE TO-257AA IRFY9130,IRFY9130M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130 0.3 Ω -11.2A Glass IRFY9130M 0.3 Ω -11.2A Glass HEXFET® MOSFET technology is the key to International	Original	PDF	O-257AA) IRFY9130 IRFY9130M IRFY9130 IRFY9130, -140A/ -100V, O-257AA IRFY9130C IRFY9130CM IRFY9130M
SHDC226309 Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD226309 TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • 100 Volt, 0.31 Ohm, -9.3 A MOSFET • • • • Fast Switching Low RDS on Equivalent to IRFY9130 Series Add a “C” to the part number for ceramic seals, SHDC226309	Original	PDF	SHD226309 IRFY9130 SHDC226309 SHD226309 O-257
IRFY9130M Abstract: No abstract text available Text: IRFY9130M Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 11.2A RDS(ON) = 0.3Ω Ω 1.0 (0.039)	Original	PDF	IRFY9130M O257AB O257AB O220M) 13-Sep-02 IRFY9130M
Untitled Abstract: No abstract text available Text: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International	Original	PDF	PD-91293C IRFY9130C, IRFY9130CM O-257AA) IRFY9130C O-257AA 5M-1994. O-257AA.
IRFY9130C Abstract: No abstract text available Text: IRFY9130C Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 11.2A RDS(ON) = 0.3Ω Ω 1.0 (0.039)	Original	PDF	IRFY9130C O257AB O257AB O220M) 13-Sep-02 IRFY9130C
Untitled Abstract: No abstract text available Text: IRFY9130 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)9.3 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)100# IDM Max (@25øC Amb)37 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)-55	Original	PDF	IRFY9130
SHDC226309 Abstract: IRFY9130 SHD226309 Text: SENSITRON SEMICONDUCTOR SHD226309 TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • 100 Volt, 0.31 Ohm, -9.3 A MOSFET • • • • Fast Switching Low RDS on Equivalent to IRFY9130 Series Add a “C” to the part number for ceramic seals, SHDC226309	Original	PDF	SHD226309 IRFY9130 SHDC226309 SHDC226309 SHD226309
HEXFET Power MOSFET P-Channel Abstract: IRFY9130C IRFY9130CM Text: Provisional Data Sheet No. PD 9.1293A IRFY9130CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.3Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.	Original	PDF	IRFY9130CM HEXFET Power MOSFET P-Channel IRFY9130C IRFY9130CM
Untitled Abstract: No abstract text available Text: IRFY9130M Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)9.3 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)37.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC)	Original	PDF	IRFY9130M
Untitled Abstract: No abstract text available Text: IRFY9130C Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11.2 I(DM) Max. (A) Pulsed I(D)7.1 @Temp (øC)100# IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55	Original	PDF	IRFY9130C
q 1363 Abstract: No abstract text available Text: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International	Original	PDF	PD-91293C IRFY9130C, IRFY9130CM O-257AA) IRFY9130C IRFY9130CM inverte16 5M-1994. O-257AA. q 1363
TRANSISTOR 112a Abstract: IRFY9130C IRFY9130CM Text: PD - 91293B POWER MOSFET THRU-HOLE TO-257AA IRFY9130C,IRFY9130CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International	Original	PDF	91293B O-257AA) IRFY9130C IRFY9130CM IRFY9130C IRFY9130C, -140A/ -100V, TRANSISTOR 112a IRFY9130CM
IRFY9130 Abstract: No abstract text available Text: IRFY9130 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 -100V -9.3A Ω 0.31Ω FEATURES	Original	PDF	IRFY9130 -100V IRFY9130
IRFY9130C Abstract: IRFY9130CM P-channel MOSFET 100V, 10 Amps Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1293A IRFY9130CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.3Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.	Original	PDF	IRFY9130CM IRFY9130C IRFY9130CM P-channel MOSFET 100V, 10 Amps

IRFM9034 Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number	Original	PDF	IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
irf5n5210sc Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)	Original	PDF	4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
10RIA10 Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy	Original	PDF	DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
IRHNA57064SCS Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5	Original	PDF	94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Untitled Abstract: No abstract text available Text: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi	OCR Scan	PDF	IRFY9130CM
Untitled Abstract: No abstract text available Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17	OCR Scan	PDF	IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460
irfm9034 Abstract: No abstract text available Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel	OCR Scan	PDF	IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034
2N7334 Abstract: irfg9110 H24 SMD Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130	OCR Scan	PDF	IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD
JANTX2N7334 Abstract: irfy430 Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6	OCR Scan	PDF	irfg110 M0-036AB 2n7334 jantx2n7334 jantxv2n7334 irfg5110 irfg6110 2n7336 irfy430
MO-D36AB Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542 Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for	OCR Scan	PDF	MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542

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IRFY9130 Search Results

IRFY9130 Datasheets (15)

IRFY9130 Datasheets Context Search

IRFY9130

SHDC226309

IRFY9130M

Untitled

IRFY9130C

Untitled

SHDC226309

HEXFET Power MOSFET P-Channel

Untitled

Untitled

q 1363

TRANSISTOR 112a

IRFY9130

IRFY9130C

IRFM9034

irf5n5210sc

10RIA10

IRHNA57064SCS

Untitled

Untitled

irfm9034

2N7334

JANTX2N7334

MO-D36AB