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    IRFY140 Search Results

    IRFY140 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY140 International Rectifier HEXFET Power Mosfet Original PDF
    IRFY140 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY140 International Rectifier HEXFET Transistors Scan PDF
    IRFY140 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY140C International Rectifier HEXFET Power Mosfet Original PDF
    IRFY140C Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY140C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY140CM International Rectifier Power MOSFET Original PDF
    IRFY140CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY140CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY140CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY140M International Rectifier 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY140M International Rectifier HEXFET Transistors Scan PDF
    IRFY140M International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF

    IRFY140 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFY140C

    Abstract: IRFY140CM
    Text: PD - 91287C POWER MOSFET THRU-HOLE TO-257AA IRFY140C,IRFY140CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY140C 0.077 Ω 16*A Ceramic IRFY140CM 0.077 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91287C O-257AA) IRFY140C IRFY140CM IRFY140C IRFY140C, O-257AA IRFY140CM

    IRFY140

    Abstract: No abstract text available
    Text: IRFY140 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 100V 18A Ω 0.092Ω FEATURES 0.89


    Original     		PDF IRFY140 IRFY140

    Untitled

    Abstract: No abstract text available
    Text: IRFY140M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)18.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)73.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)


    Original     		PDF IRFY140M

    Untitled

    Abstract: No abstract text available
    Text: IRFY140-T257 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL


    Original     		PDF IRFY140-T257 O257AA 257AA

    Untitled

    Abstract: No abstract text available
    Text: IRFY140CM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)16 I(DM) Max. (A) Pulsed I(D)16 @Temp (øC)100# IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)-55


    Original     		PDF IRFY140CM

    IRFY140C

    Abstract: IRFY140CM
    Text: Provisional Data Sheet No. PD 9.1287B IRFY140CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.077Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF 1287B IRFY140CM IRFY140C IRFY140CM

    IRFY140

    Abstract: IRFY140C IRFY140CM IRFY140M diode 16A 100V
    Text: PD - 94185 POWER MOSFET THRU-HOLE TO-257AA IRFY140,IRFY140M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY140 0.077 Ω 16*A Glass IRFY140M 0.077 Ω 16*A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY140 IRFY140M IRFY140 IRFY140, O-257AA IRFY140C IRFY140CM IRFY140M diode 16A 100V

    shd2262

    Abstract: shd226402
    Text: SENSITRON SEMICONDUCTOR SHD226402 TECHNICAL DATA DATA SHEET 606, REV. A Formerly DS302, SHD2262 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.092 Ohm, 18A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY140 Series


    Original     		PDF DS302, SHD2262 SHD226402 IRFY140 O-257 shd2262 shd226402

    Untitled

    Abstract: No abstract text available
    Text: IRFY140 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)12 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55


    Original     		PDF IRFY140

    Untitled

    Abstract: No abstract text available
    Text: PD - 94185 POWER MOSFET THRU-HOLE TO-257AA IRFY140,IRFY140M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY140 0.077 Ω 16*A Glass IRFY140M 0.077 Ω 16*A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY140 IRFY140M IRFY140 IRFY140, O-257AA

    Untitled

    Abstract: No abstract text available
    Text: PD - 91287C POWER MOSFET THRU-HOLE TO-257AA IRFY140C,IRFY140CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY140C 0.077 Ω 16*A Ceramic IRFY140CM 0.077 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91287C O-257AA) IRFY140C IRFY140CM IRFY140C IRFY140C, O-257AA

    IRFY140CM

    Abstract: IRFY140C
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1287B IRFY140CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.077Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF 1287B IRFY140CM IRFY140CM IRFY140C

    IRFY140C

    Abstract: No abstract text available
    Text: IRFY140C MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) VDSS ID(cont) RDS(on) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420)


    Original     		PDF IRFY140C 257AA IRFY140C

    DS302

    Abstract: IRFY140 SHD2262 SHD226402
    Text: SENSITRON SEMICONDUCTOR SHD226402 TECHNICAL DATA DATA SHEET 606, REV. A Formerly DS302, SHD2262 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.092 Ohm, 18A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY140 Series


    Original     		PDF SHD226402 DS302, SHD2262 IRFY140 DS302 SHD2262 SHD226402

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    SHD239608

    Abstract: shd239606
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM


    Original     		PDF O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    Untitled

    Abstract: No abstract text available
    Text: nil =Vr= INI SEM E IRFY140C LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 . 8 3 (0 .1 9 0 ) V DSS 100 V 15A ^D(cont) 0.092ft ^D S (on) FEATURES • HERMETICALLY SEALED TO -257AA METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS


    OCR Scan     		PDF IRFY140C 092ft -257AA

    I1092

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PO 9.1287B International I G R Rectifier HEXFET PO W E R M O S F E T IRFY140CM N -C H A N N E L Product Summary 100 Volt, 0.077Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­


    OCR Scan     		PDF 1287B IRFY140CM D0S4S11 I1092

    Untitled

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17


    OCR Scan     		PDF IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD