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    IRFR CROSS Search Results

    IRFR CROSS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    10150535-050HLF Amphenol Communications Solutions Cross-Mate™, Wire to Board connectors 2.0mm Pitch, Cable Connector Visit Amphenol Communications Solutions
    ME3008430701211 Amphenol Communications Solutions Mini cool edge 0.6mm,84pin,orthogonal ,1x1,8.655mm offset,with cross head screw,Gen5 Visit Amphenol Communications Solutions
    ME2008430701211 Amphenol Communications Solutions Mini cool edge 0.6mm,84pin,orthogonal ,1x1,8.655mm offset,with cross head screw,Gen4 Visit Amphenol Communications Solutions
    ME2008430701111 Amphenol Communications Solutions Mini cool edge 0.6mm,84pin,orthogonal ,1x1,7.805mm offset,with cross head screw,Gen4 Visit Amphenol Communications Solutions

    IRFR CROSS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V


    Original     		IRFR/U120A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		IRFR/U220A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V


    Original     		IRFR/U120A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U230A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		IRFR/U230A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V


    Original     		IRFR/U110A PDF

    MOSFET C25 cross-reference

    Abstract: IRFR120ATF
    Text: IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V


    Original     		IRFR/U120A O-251 MOSFET C25 cross-reference IRFR120ATF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U210A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		IRFR/U210A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.11 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V


    Original     		IRFR/U130A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.11 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V


    Original     		IRFR/U130A 13icing* O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U330A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 4.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRFR/U330A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U420A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology = 3.0Q ♦ Rugged Gate Oxide Technology ^DS on ♦ Lower Input Capacitance lD = 2.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current:


    OCR Scan     		IRFR/U420A PDF

    IRFR110A

    Abstract: No abstract text available
    Text: IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V


    Original     		IRFR/U110A O-252 IRFR110A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U430A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.5Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		IRFR/U430A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U224A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.1Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		IRFR/U224A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U034A A d van ced Power MOSFET FEATURES B^dss - ♦ Avalanche Rugged Technology 60 V 0.04Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 23 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 60V


    OCR Scan     		IRFR/U034A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U024A A d van ced Power MOSFET FEATURES B^dss - 60 V ♦ Avalanche Rugged Technology 0.07Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 60V


    OCR Scan     		IRFR/U024A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U420A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		IRFR/U420A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U224A Advanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 1-1 ^ 3.8 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V


    OCR Scan     		IRFR/U224A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U214A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		IRFR/U214A PDF

    U214

    Abstract: No abstract text available
    Text: IRFR/U214A Advanced Power MOSFET FEATURES B V dss = 250 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 2 .0 Q 2 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (M ax.) @ V DS = 250V


    OCR Scan     		IRFR/U214A U214 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U310A Advanced Power MOSFET FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS on = 3.6 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 1.7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V


    Original     		IRFR/U310A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U320A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRFR/U320A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U310A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.6Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 1.7 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRFR/U310A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U034A FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.04Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 23 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V


    Original     		IRFR/U034A PDF