IRFP4332 MOSFET Search Results

IRFP4332 MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

IRFP4332 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
irfp4332 Abstract: irfp4332 mosfet IRFB4332 Text: PD - 97139 IRFC4332B PDP MOSFET HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film 250V RDS on = 0.033Ω (max.) 6" Wafer G S Key Electrical Characteristics (TO-220 package)d Parameter	Original	IRFC4332B O-220 irfp4332 irfp4332 mosfet IRFB4332	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

irfp4332

Abstract: irfp4332 mosfet IRFB4332
Text: PD - 97139 IRFC4332B PDP MOSFET HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film 250V RDS on = 0.033Ω (max.) 6" Wafer G S Key Electrical Characteristics (TO-220 package)d Parameter

Original

IRFC4332B O-220 irfp4332 irfp4332 mosfet IRFB4332

PDF