IRFP35 Search Results

u400

Abstract: u320 IRFP350 U200
Contextual Info: Транзисторы для силовой электроники ПОЛЕВЫЕ ТРАНЗИСТОРЫ КП350 IRFP350 N-канальный МОП ПТ Uси=400 В; Rси=0.3 Ом; Iс=14 А z Высокие динамические характеристики

IRFP350LC

Contextual Info: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247

IRF350LC

Abstract: IRFP350LC IRFPE30
Contextual Info: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω

Contextual Info: IRFP350 Data Sheet Title FP3 bt A, 0V, 00 m, 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFP350A Advanced Power MOSFET FEATURES B ^ dss - 400 V ^ D S o n = 0 .3 Q ♦ A va la n ch e Rugged T e ch n o lo g y ♦ Rugged G ate O xide T e ch n o lo g y ♦ Lo w e r Input C a pa citance lD = ♦ Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a

C528 transistors

Abstract: C528 DIODE
Contextual Info: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353

IRFP350

Abstract: SiHFP350 IRFP350PBF
Contextual Info: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: International PD'9-1229 [jogRectifier_ IRFP350LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, C0Ss, ^rss Isolated Central Mounting Hole Dynamic dv/dt Rated

035H

Abstract: IRFPE30
Contextual Info: PD - 94877 IRFP350PbF • Lead-Free Document Number: 91225 12/9/03 www.vishay.com 1 IRFP350PbF Document Number: 91225 www.vishay.com 2 IRFP350PbF Document Number: 91225 www.vishay.com 3 IRFP350PbF Document Number: 91225 www.vishay.com 4 IRFP350PbF Document Number: 91225

IRFP350A

Contextual Info: IRFP350A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -3 £ 2 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

TO-247AC Package

Abstract: 035H IRFPE30 PE30 irfp350lcpbf TO247AC
Contextual Info: PD- 95714 IRFP350LCPbF • Lead-Free 1 IRFP350LCPbF 2 IRFP350LCPbF TO-247AC Package Outline Dimensions are shown in millimeters inches TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRF PE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H"

035H

Abstract: IRFPE30
Contextual Info: PD - 94877 IRFP350PbF • Lead-Free www.irf.com 1 12/9/03 IRFP350PbF 2 www.irf.com IRFP350PbF www.irf.com 3 IRFP350PbF 4 www.irf.com IRFP350PbF www.irf.com 5 IRFP350PbF 6 www.irf.com IRFP350PbF TO-247AC Package Outline Dimensions are shown in millimeters inches

Contextual Info: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFP350FI

Abstract: SC-02U
Contextual Info: r Z 7 S G S - T H O M S O N HD g»lllLi(gTnEi iD(gi IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS IRFP350FI 400 V ^D S(on 0.3 fi 10 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • HIGH CURRENT - FOR SMPS UPTO 350W • ULTRA FAST SWITCHING - FOR OPERATION

IRFP350

Contextual Info: PD-9.445C International S Rectifier IRFP350 HEXFET Power MOSFET • • • • • • Dynamic dv/di Rating Repetitive Avalanche Rated Isolated Centra! Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 400V ^ D S o n = 0 - 3 0 Q

IRFP350

Abstract: IRFP350FI Transistor IRFP350 THOMSON
Contextual Info: 7^237 *57 0QMS73T TS? SGTH SGS-mOMSON IRFP350 IRFP350FI R Æ O œ o & tlû ïïm r e S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F P 3 5 0 IR F P 3 5 0 F I V dss 40 0 V 40 0 V R dS oii Id < 0 .3 £2 < 0 .3 a 16 A 10 A TYPICAL FtDS(on) = 0.21 £2

IRFP350

Contextual Info: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

T0247AC

Abstract: IRFP450LC irfp9240
Contextual Info: HEXFET International Power MOSFETs liôR R ectifier TO-247AC Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-247AC N-Channel “Low Charge” Part Number IRFP350LC IRFP360LC IRFP450LC IRFP460LC

Contextual Info: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: IRFP350 S e m iconductor July 1999 Data Sheet 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET • 16A ,400V Ordering Information IRFP350 TO-247 • r DS ON = 0.300i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFP350LC

Contextual Info: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247

IRFP350

Abstract: SiHFP350
Contextual Info: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFP350LCPBF

Abstract: 035H IRFPE30 PE30
Contextual Info: PD- 95714 IRFP350LCPbF • Lead-Free Document Number: 91224 08/03/04 www.vishay.com 1 IRFP350LCPbF Document Number: 91224 www.vishay.com 2 IRFP350LCPbF Document Number: 91224 www.vishay.com 3 IRFP350LCPbF Document Number: 91224 www.vishay.com 4 IRFP350LCPbF