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    IRFHM830DTR2PBF

    Abstract: IRFHM830DTRPBF AN-1154 J-STD-020D IRFHM830
    Text: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters


    Original     		PDF -96327A IRFHM830DPbF 409mH, IRFHM830DTR2PBF IRFHM830DTRPBF AN-1154 J-STD-020D IRFHM830

    Untitled

    Abstract: No abstract text available
    Text: IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 4 G 6 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters Features and Benefits


    Original     		PDF IRFHM830DPbF

    Untitled

    Abstract: No abstract text available
    Text: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 30 V 4.3 mΩ 13 1.1 nC D 5 D Qg (typical) RG (typical) ID 40 (@Tc(Bottom) = 25°C) Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters


    Original     		PDF -96327A IRFHM830DPbF 409mH,

    Untitled

    Abstract: No abstract text available
    Text: IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) Ω h A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3mΩ)


    Original     		PDF IRFHM830DPbF