IRFD12 Search Results

Power MOSFET in a HEXDIP package

Abstract: TA17401 IRFD120 TB334
Contextual Info: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS ON = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

385H

Abstract: IRFD120 dual mosfet marking 506
Contextual Info: International S Rectifier PD-9.385H IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS on =

IRF0110

Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123

IRFD120PBF

Abstract: IRFD120
Contextual Info: PD- 95928 IRFD120PbF • Lead-Free www.irf.com 1 10/27/04 IRFD120PbF 2 www.irf.com IRFD120PbF www.irf.com 3 IRFD120PbF 4 www.irf.com IRFD120PbF www.irf.com 5 IRFD120PbF 6 www.irf.com IRFD120PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: IRFD122 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ

SiHFD123

Contextual Info: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable

IRFD120

Abstract: irfd123 IRF0123
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 TMOS Field Effect Transistor Dual In-Line Package IR F D 1 2 3 N-Channel Enhancement Mode TM O S FET TR A N S IS TO R S FE T DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline

IRFD120

Contextual Info: PD- 95927 IRFD110PbF • Lead-Free 1 IRFD110PbF 2 IRFD110PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*

Contextual Info: IRFD123_RC, SiHFD123_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFD123 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ

IRFD120

Contextual Info: IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable

F7101

Abstract: international rectifier code 807D1 IRF530S IRF7101 IRF7807D1 IRFD120 MS-012AA 8024 digit 263A
Contextual Info: HD-1 HEXDIP THIS IS AN IRFD120 INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFD120 XXXX LAST FOUR DIGITS OF ASSEMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW = WEEK D 2 Pak (TO-263A) THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"

IRFD120

Abstract: HexDIP Package HEXDIP
Contextual Info: PD- 95920 IRFD014PbF • Lead-Free 1 IRFD014PbF 2 IRFD014PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE

90161

Contextual Info: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable

SiHFD123

Contextual Info: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable

IRFD120

Contextual Info: PD- 95919 IRFD9120PbF • Lead-Free 1 IRFD9120PbF 2 IRFD9120PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE

irfd120

Contextual Info: IRFD120 Data Sheet Title FD 0 bt 3A, 0V, 00 m, an- 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

1RFD120

Abstract: TRANSISTOR IRFD120
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 IRFD123 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline TMOS FET TRANSISTORS

IRFD123

Abstract: D120 IRFD120 if1070 IRFD 120 IRFD 123
Contextual Info: Tem ic IRFD120/123 Siliconix N-Channel Enhancement-Mode Transistors Product Summary Part Num ber V BR DSS 00 rDS(on) (Ö ) I d (A) IRFD120 100 0.3 1.3 IRFD123 60 0.4 1.1 D D Top View 6 s N-Channel M OSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)

IRF0123

Abstract: IRFD122 IRFD123
Contextual Info: [F FIELD EFFECT POWER TRANSISTOR ]CZ T h is series of N -C h a n n e i E n h a n ce m e n t-m o d e Pow er M O S F E T s utilizes G E 's advanced Power D M O S technology to achieve low on-reslstance with excellent device rugged­ ness and reliability. IRFD122.123

IRFD123

Abstract: IRF0123 100MS IRFD122 transistor 123 DL
Contextual Info: r a ? M ^ D lM ! S @ F IE F IRFD122.123 RELD EFFECT POWER TRANSISTOR 1.1 AMPERES 100,60 VOLTS RPS ON = 0-4 A This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

irf0014

Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
Contextual Info: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123

Contextual Info: 4 0 5 5 4 5 2 0015GB2 1Ô4 » I N R International SËr]Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • PD-9.385H INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature