IRF9510 SEC Search Results

IRF95

Abstract: IRF9510 p channel mosfet 100v TA17541
Contextual Info: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

IRF9510

Abstract: IRF9513
Contextual Info: P-CHANNEL POWER MOSFETS IRF9510/9511/9512/9513 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

Contextual Info: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of

1RF9510

Abstract: 390D IRF9510 IRF9510S ScansUX102 ls40a w5A marking
Contextual Info: PD-9.390D International lâjll Rectifier IRF9510 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S ~ "1 0 0 V

IRF9510

Abstract: TA17541
Contextual Info: IRF9510 Data Sheet January 2002 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF9511

Abstract: IRF9510 IRF9510 harris irf9512
Contextual Info: IRF9510, IRF9511, IRF9512, IRF9513 HARRIS S E M I C O N D U C T O R -2.5A and -3.0A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -2.5A and -3.0A, -80V and -100V These are P-Channel enhancement mode silicon gate

IRF9510

Abstract: marking lora 390D irf9510 IR
Contextual Info: PD-9.390D International S Rectifier IRF9510 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -1 0 0 V

IRF9511

Abstract: irf9510
Contextual Info: P-CHANNEL POWER MOSFETS IRF9510/9511 FEATURES TO-220 • Lower R o s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

irf 425

Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
Contextual Info: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815

IRF9511

Abstract: IRF9510 IRF9513 IRF9510 harris
Contextual Info: IRF9510, IRF9511, IRF9512, IRF9513 S E M I C O N D U C T O R -2.5A and -3.0A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -2.5A and -3.0A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRF9510 Data Sheet Title F95 bt A, 0V, 00 m, Chanwer OST utho eyrds ter- July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of

IRF9510

Abstract: IRF9513 9511 ISE Electronics IRF9511 IRF9510 Samsung D0122
Contextual Info: SA M S UN G E L E C T R O N I C S INC 7^4142 b4E D IRF9510/9511/9512/9513 FEATURES • • • • • • • D D 1 2 2 4 3 TS3 M S I I G K P-CHANNEL POWER MOSFETS TO-220 Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF9510 harris

Contextual Info: h a r r is s e m ic o n d u c to r I R F 9 5 1 0 , I R F 9 5 1 1, IR F 9 5 1 2 , IR F 9 5 1 3 -2.5A and -3.0A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Description Features -2.5A and -3.0A, -80V and -100V High Input Impedance These are P-Channel enhancem ent mode silicon gate

Contextual Info: International [ï^l Rectifier • 1,1551,55 DGl,H* 013 " INR PD9390D IR F9510 HEXFET Power M O S F E T • • • • • • • INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching

TP2350B

Abstract: J200 mosfet tp2350 TRIPATH TC2001 TK2350 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 2.2 November 2004 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier chipset from

tp2350

Abstract: J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor TK2350
Contextual Info: Tr i path Technol ogy, I nc. - Technical Information RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 1.5 June 2002 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier

INDUCTOR DE 100UH SMD PACKAGE

Abstract: IRF9510 ptc application note STPR120A sm6t39a smd sttb STLC3055Q diode byt 11600
Contextual Info: AN2117 APPLICATION NOTE STLC3055N SINGLE SUPPLY SLIC FOR WLL APPLICATION The STLC3055N is a slic device specially designed for WLL Wireless Local Loop and ISDN Terminal Adapters. It is a feature optimization of the first STLC3055Q generation 1 WIRELESS LOCAL LOOP SYSTEM

AN2118

Abstract: INDUCTOR DE 100UH SMD PACKAGE STLC3055N CV 360 K20 IRF9510 ptc application note diode BYW 79
Contextual Info: AN2118 APPLICATION NOTE STLC3075 SINGLE SUPPLY SLIC FOR WLL APPLICATION IN BUCK-BOOST CONFIGURATION The STLC3075 is a slic device specially designed for WLL Wireless Local Loop and ISDN Terminal Adapters. 1 WIRELESS LOCAL LOOP SYSTEM Figure 1. The main characteristics of this device consist in the possibility to:

byt 78v

Abstract: INDUCTOR DE 100UH SMD PACKAGE STLC3055N STLC3055Q AN2117 IRF9510S 11Apk transistor smd za TYP78 TRANSILS
Contextual Info: AN2117 APPLICATION NOTE STLC3055N SINGLE SUPPLY SLIC FOR WLL APPLICATION The STLC3055N is a slic device specially designed for WLL Wireless Local Loop and ISDN Terminal Adapters. It is a feature optimization of the first STLC3055Q generation 1 WIRELESS LOCAL LOOP SYSTEM

AN2118

Abstract: SM6T39A AN2132 CDRH125 IRF9510S SMBYW01-200 STLC3055N STLC3075 PC00335
Contextual Info: AN2118 Application note STLC3075 single supply SLIC for WLL application in buck-boost configuration Introduction The STLC3075 is a SLIC device specially designed for WLL Wireless Local Loop and ISDN terminal adapters. This document contains a description of the device functions in buck-boost configuration,

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

1000w subwoofer amplifier

Abstract: tp2350 SCHEMATIC 1000w power amplifier stereo EB-TK2350 5.1 speaker with subwoofer circuit diagram 1000w RB-TK2350 TRIPATH TA3020 1000w subwoofer amplifier PCB layout 500 watt subwoofer VN10
Contextual Info: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on TK2350 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information Revision 1.0 – May 2002 GENERAL DESCRIPTION The TK2350 (TC2001/TP2350 chipset) is a two-channel, 300W (4Ω) per channel Amplifier