IRF5850
Abstract: No abstract text available
Text: PD - 95506A IRF5850PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International
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5506A
IRF5850PbF
IRF5850
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power MOSFET IRF data
Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Text: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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IRF5850PbF
IRF5850
power MOSFET IRF data
IRF Power MOSFET code marking
IRF5850PBF
mosfet p-channel 10A irf
IRF5800
IRF5801
IRF5852
mosfet irf p-channel
irf 2010
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IRF5820
Abstract: SI3443DV IRF5800 IRF5850
Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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3947A
IRF5850
IRF5850
OT-23
IRF5820
SI3443DV
IRF5800
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SI3443DV
Abstract: IRF5806 IRF5852 MO-193-AA IRF5800 IRF5805 IRF5810 IRF5850 IRF5851 MO-193AA
Text: TSOP6 MO-193AA W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER TOP PART NUMBER CODE REFERENCE: A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 LOT CODE YEAR Y 2001 2002
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MO-193AA)
SI3443DV
IRF5800
IRF5850
IRF5851
IRF5852
IRF5805
IRF5806
IRF5810
SI3443DV
IRF5806
IRF5852
MO-193-AA
IRF5800
IRF5805
IRF5810
IRF5850
IRF5851
MO-193AA
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IRF5850
Abstract: No abstract text available
Text: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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IRF5850
IRF5850
OT-23
i252-7105
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TSOP-6 .54
Abstract: irf5850 TSOP6 Marking Code 17
Text: PD - 95506B IRF5850PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International
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95506B
IRF5850PbF
IRF5850
OT-23RK
TSOP-6 .54
TSOP6 Marking Code 17
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IRF 511 MOSfet
Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier
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IRF5805PbF
OT-23.
IRF 511 MOSfet
IRF5850
IRF5851
IRF5852
IRF5805PBF
mosfet 23 Tsop-6
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mosfet p-channel 300v irf
Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier
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PD-95240
Si3443DVPbF
OT-23.
mosfet p-channel 300v irf
P-Channel 200V MOSFET TSOP6
IRF5850
IRF5851
IRF5852
mosfet 23 Tsop-6
PD-95240
p-channel 250V 30A power mosfet
IRF 100A 500V
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IRF5800
Abstract: IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6
Text: PD-94015 IRF5803 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from
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PD-94015
IRF5803
simila5805
IRF5806
IRF5800
IRF5803
SI3443DV
sot-23 Marking 3D
Switching Diode SOT23 Marking 3D
Switching Diode SOT23 Marking 3J
MARKING CODE 88 TSOP-6
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IRF5820
Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier
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3997A
IRF5806
OT-23.
space252-7105
IRF5820
IRF5806
IRF5800
SI3443DV
3D marking sot23
sot-23 Marking 3D
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IRF5800
Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
Text: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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IRF5802
AN1001)
IRF5800
IRF5802
IRF5805
IRF5850
IRF5851
IRF5852
SI3443DV
AN1001
diode MARKING CODE 3J
marking code 46 tsop-6
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IRF P CHANNEL MOSFET
Abstract: irf p channel IRF5851 IRF5800 IRF5850 SI3443DV
Text: PD-93998 IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International
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PD-93998
IRF5851
requi05
IRF5806
IRF P CHANNEL MOSFET
irf p channel
IRF5851
IRF5800
IRF5850
SI3443DV
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Untitled
Abstract: No abstract text available
Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier
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-94029A
IRF5805
OT-23.
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IRF5802
Abstract: No abstract text available
Text: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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IRF5802
AN1001)
IRF5802
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Untitled
Abstract: No abstract text available
Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -3.0A Description These P-channel MOSFETs from International Rectifier
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3997A
IRF5806
OT-23.
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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IRF MOSFET 100A 200v
Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
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IRF5801PbF
10sec.
IRF MOSFET 100A 200v
IRF 100A
IRF n 30v
IRF5851
MOSFET 150 N IRF
IRF5802
IRF5803
IRF5804
IRF5805
IRF5806
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Untitled
Abstract: No abstract text available
Text: FOR REVIEW ONLY IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -20V 90@VGS = -4.5V 135@VGS = -2.5V -2.9A -2.3A Description These P-channel HEXFET® Power MOSFETs from
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IRF5810
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Untitled
Abstract: No abstract text available
Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 40 mΩ 66 mΩ 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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6411A
IRFTS9342PbF
IRFTS9342TRPbF
D-020D
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0.5-4A
Abstract: AN1001 IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
Text: PD- 95475A IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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5475A
IRF5802PbF
AN1001)
0.5-4A
AN1001
IRF5800
IRF5801
IRF5806
IRF5810
IRF5850
IRF5851
IRF5852
SI3443DV
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IRF Power MOSFET code marking
Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
Text: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier
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IRF5800PbF
OT-23.
IRF Power MOSFET code marking
IRF 535
IRF5800
IRF5850
SI3443DV
IRF MOSFET 10A P
MOSFET IRF 94
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IRFTS9342TRPBF
Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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6411A
IRFTS9342PbF
IRFTS9342TRPbF
D-020D
IRFTS9342TRPBF
8342T
IRFTS9342
6342T
TSOP6 Marking Code 17
IRF 840 MOSFET
IRF n 30v
IRF5803
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IRLTS6342TRPBF
Abstract: IRLTS6342 m4570 irlts6342tr irf5850
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
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IRLTS6342PbF
IRLTS6342TRPBF
D-020D
IRLTS6342TRPBF
IRLTS6342
m4570
irlts6342tr
irf5850
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international rectifier code
Abstract: MO-193AA IRF5850 IRF5852 IRF5800 IRF5805 IRF5806 IRF5851 IRF7702 SI3443DV
Text: TS0P6 MO-193AA W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR Y = YEAR PART NUMBER a i r " W =W EEK AYWLC TOP PART NUMBER CODE REFERENCE Ä = SI3443DV B= C= D= E= IRF5800 IRF5850 IRF5851 IRF5852 7 = IRF5805 7 = IRF5806 LOT CODE 2001 2002 2003
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OCR Scan
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MO-193AA)
SI3443DV
IRF5800
IRF5850
IRF5851
IRF5852
IRF5805
IRF5806
MO-153AA)
IRF7702
international rectifier code
MO-193AA
IRF5806
IRF5851
IRF7702
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