IRF530N APPLICATIONS Search Results

IRF530N

Abstract: IRF530N applications IRF1010 irf1010 applications
Contextual Info: PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier

IRF530N

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description

IRF530N

Abstract: MOSFET IRF530n
Contextual Info: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

IRF530N

Contextual Info: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: Internationa! P D - 9.1351 SRectifier IRF530N PRELIMINARY H EXFET Pow er M O S FE T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V o s s = 100V R DS on = 0 . 1 1 Q

IRF530N

Abstract: IRF530N applications
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ

Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International

IRF530N

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International

IRF530N

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International

R54 Transistor

Abstract: R52 transistor DPA424P J22 transistor IRF530N applications VC51 DI-70 TRANSISTOR R52 in4148 zener diode zener diode c25
Contextual Info: Design Idea DI-70 DPA-Switch Power Over Ethernet Interface Circuit and DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424P 15 W 36-75 VDC 5 V / 7.5 V / 20 V Forward Design Highlights The second “Classification” phase occurs at input voltages

12v 200W AUDIO AMPLIFIER

Abstract: IR2011 8ohm 1W speaker 12v 100w TRANSISTOR AUDIO AMPLIFIER stereo amplifier 100W 24v C40C ir2011 application IRF530N applications 48V 100W zener diode 12v 100w amplifier
Contextual Info: LX1722HV EVALUATION BOARD USER GUIDE LXE1722HV AUDIOMAX EVALUATION KIT USER’S GUIDE TM Copyright 2000 Rev. 0.2, 2002-01-25 Microsemi Inc. Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1

DI-70

Abstract: TRANSISTOR R52 C22-C24 BAV19WS D101 DI-69 DL4002 DPA424P "Power over Ethernet" VR51
Contextual Info: Design Idea DI-70 DPA-Switch PoE Detection and Classification Class 0 Interface Circuit Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424P 12.94 W 34-57 VDC 5 V / 7.5 V / 20 V Forward Design Highlights • • •

DPA424PN

Abstract: DI-70 D108 transistor PC357 BAV19WS D101 DI-69 IN4148 VR51 tip29
Contextual Info: DI-70 Design Idea DPA-Switch PoE Detection and Classification Class 0 Interface Circuit Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424PN 12.94 W 34 – 57 VDC 5 V, 7.5 V, 20 V Forward Design Highlights • Simple, low-cost, discrete PoE interface circuit

TPS2330

Abstract: TPS2300 TPS2331 GMK316F475Z schematic diagram 48V telecom 12061C104KAT2A
Contextual Info: TPS2330 48ĆV Telecom Hot Swap Evaluation Module and Interface Card User’s Guide April 2001 PMP PD & PS SLVU048 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

PHP18NQ10T

Abstract: IRF540 MOSFET datasheet PHP18NQ20T PHB27NQ10T PHB23NQ10T IRF540 p-channel MOSFET PHP45 MOSFET IRF540 PHP30NQ15T TO247
Contextual Info: High performance MOSFETs for DC-DC conversion 100 V / 200 V MOSFETs Solutions for power in Communications SMPS Optimized solutions for 100 V Output power W Optimal Philips Semiconductors’ TrenchMOS technology exhibits significantly lower gate charge for a given RDS(on), thus delivering far better

Contextual Info: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A

IRF530N

Abstract: IRFI530N IRFI840G
Contextual Info: PD -9.1353 IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 11A Description

IRF530NS

Abstract: 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator
Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description

TPS23XX

Abstract: UC3914 UCC3913 UCC3917 UCC3921 Z9.1 zener DIODE
Contextual Info: Power Management Texas Instruments Incorporated –48-V/+48-V hot-swap applications By Heping Dai Systems Design Engineering, Power Management Products, AAP Introduction The rapid growth of telecommunications and Internet access systems that run continuously has increased the

conclusion of zener diode voltage report

Abstract: 1N47 series zener diodes 1N47 Zener 1N47 series diodes DIODE 1N47 IRF530N ZENER DIODE 5.1V TPS2330 UC3914 UCC3913
Contextual Info: Application Report SLVA097 – May 2001 ±48-V Hot-Swap Applications With TPS23xx Hot-Swap Controllers Heping Dai Power Management Products, AAP ABSTRACT The rapid development of telecommunication and networked systems has accelerated the growth of products requiring the hot-plug capability demanded by systems with a

Contextual Info: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating

Contextual Info: PD - 95419 HEXFET Power MOSFET l l l l l l IRFI530NPbF PRELIMINARY Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description

IRF530N

Abstract: 4.5V to 100V input regulator
Contextual Info: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier

IRF530N

Abstract: IRFI530N IRFI840G JS t 15 IRFI530 ScansUX32
Contextual Info: PD -9.1353 IRFI530N P R E LIM IN A R Y HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S <9 Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated V dss - 100V R D S o n = 0 .1 1 £2