IRF530FP Search Results

IRF530FP

Contextual Info: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY

IRF530FP

Abstract: OT 306 IRF 950
Contextual Info: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF 530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY

Contextual Info: Zjï SGS-THOMSON ¡ILIOTI^OKinei IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP V d s s 100 V R d S o ii < 0.16 a Id 10 A . TYPICAL RDs(on) =0.12 £2 . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW GATE CHARGE