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    IRF2807 Search Results

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    IRF2807 Price and Stock

    Rochester Electronics LLC AUIRF2807

    AUTOMOTIVE HEXFET N CHANNEL
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    DigiKey AUIRF2807 Bulk 6,902 213
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    Infineon Technologies AG IRF2807Z

    MOSFET N-CH 75V 75A TO220AB
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    DigiKey IRF2807Z Tube 50
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    Infineon Technologies AG IRF2807S

    MOSFET N-CH 75V 82A D2PAK
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    DigiKey IRF2807S Tube 50
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    Win Source Electronics IRF2807S 37,115
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    Infineon Technologies AG IRF2807L

    MOSFET N-CH 75V 82A TO262
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    DigiKey IRF2807L Tube 50
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    Infineon Technologies AG AUIRF2807

    MOSFET N-CH 75V 75A TO220AB
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    DigiKey AUIRF2807 Tube
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    Newark AUIRF2807 Bulk 1 1
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    Rochester Electronics AUIRF2807 60 1
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    EBV Elektronik AUIRF2807 143 Weeks 1,000
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    Find more IRF2807 price and stock on Findchips.com

    IRF2807 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF2807 International Rectifier HEXFET Power MOSFET Original PDF
    IRF2807 International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF2807 with Standard Packaging Original PDF
    IRF2807 International Rectifier HEXFET Power MOSFET Original PDF
    IRF2807 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF2807 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 75V, 71A, Pkg Style TO-220AB Scan PDF
    IRF2807L International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF2807L with Standard Packaging Original PDF
    IRF2807L International Rectifier HEXFET Power Mosfet Original PDF
    IRF2807L International Rectifier HEXFET Power MOSFET Original PDF
    IRF2807L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF2807LPBF International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF2807L with Lead Free Packaging Original PDF
    IRF2807LPBF International Rectifier Original PDF
    IRF2807PBF International Rectifier Advanced Process Technology Original PDF
    IRF2807PBF International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF2807 with Lead-Free Packaging. Original PDF
    IRF2807S International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF2807S with Standard Packaging Original PDF
    IRF2807S International Rectifier HEXFET Power MOSFET Original PDF
    IRF2807S International Rectifier HEXFET Power MOSFET Original PDF
    IRF2807S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF2807SPBF International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF2807S with Lead Free Packaging Original PDF
    IRF2807SPBF International Rectifier Original PDF
    IRF2807STRL International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF2807S with Tape and Reel Left Packaging Original PDF

    IRF2807 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    igbt 50V 420A

    Abstract: 94659 IRF2807Z AN-994 IRF2807ZL IRF2807ZS
    Text: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET


    Original     		4659A IRF2807Z IRF2807ZS IRF2807ZL Automotive23 EIA-418. O-220AB igbt 50V 420A 94659 IRF2807Z AN-994 IRF2807ZL IRF2807ZS PDF

    60V Single N-Channel HEXFET Power MOSFET in a HEX

    Abstract: AN-994 IRF2807L irf2807s
    Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ


    Original     		IRF2807SPbF IRF2807LPbF EIA-418. 60V Single N-Channel HEXFET Power MOSFET in a HEX AN-994 IRF2807L irf2807s PDF

    IRF2807

    Abstract: No abstract text available
    Text: PD - 91517A IRF2807 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 0.013Ω G Description ID = 82A… S Fifth Generation HEXFETs from International Rectifier


    Original     		1517A IRF2807 O-220 O-220AB IRF2807 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features n n n n n n Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET


    Original     		4659A IRF2807Z IRF2807ZS IRF2807ZL O-220AB PDF

    RF53

    Abstract: No abstract text available
    Text: IRF2807S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL


    Original     		IRF2807S/LPbF EIA-418. RF53 PDF

    AN-994

    Abstract: IRF2807ZPBF
    Text: PD - 95488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original     		5488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF EIA-418. O-220AB AN-994 IRF2807ZPBF PDF

    IRF2807PBF

    Abstract: No abstract text available
    Text: PD - 94970 IRF2807PbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 75V l RDS on = 13mΩ G ID = 82A‡


    Original     		IRF2807PbF O-220 IRF2807PBF PDF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent PDF

    AN-994

    Abstract: IRF2807Z IRF2807ZL IRF2807ZS
    Text: PD - 95488 AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF


    Original     		IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF O-220AB AN-994 IRF2807Z IRF2807ZL IRF2807ZS PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF2807 TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation


    Original     		IRF2807 O-220AB O-220 PDF

    IRF2807PBF

    Abstract: IRF1010
    Text: PD - 94970A IRF2807PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description


    Original     		4970A IRF2807PbF O-220 O-220AB IRF2807PBF IRF1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original     		5488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF EIA-418. O-220AB PDF

    AN-994

    Abstract: IRF2807L IRF2807S
    Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International


    Original     		IRF2807S IRF2807L AN-994 IRF2807L IRF2807S PDF

    Untitled

    Abstract: No abstract text available
    Text: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		IRF2807S) IRF2807L) PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF2807S IRF2807L Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l TO-262 IRF2807L D2Pak IRF2807S l Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve


    Original     		IRF2807S IRF2807L O-262 PDF

    igbt 50V 420A

    Abstract: diode 53a AN-994 IRF2807Z IRF2807ZL IRF2807ZS
    Text: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET


    Original     		4659A IRF2807Z IRF2807ZS IRF2807ZL O-220AB igbt 50V 420A diode 53a AN-994 IRF2807Z IRF2807ZL IRF2807ZS PDF

    IRF2807

    Abstract: DIODE y 12 MOSFET IRF 570
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1517 IRF2807 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 0.013Ω G Description


    Original     		IRF2807 O-220 IRF2807 DIODE y 12 MOSFET IRF 570 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International


    Original     		IRF2807S IRF2807L PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF2807PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


    Original     		IRF2807PbF O-220AB O-220AB. PDF

    IRF2807

    Abstract: irf2807 equivalent 5v 10A regulator
    Text: PD - 91517A IRF2807 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 0.013Ω G Description ID = 82A… S Fifth Generation HEXFETs from International Rectifier


    Original     		1517A IRF2807 O-220 IRF2807 irf2807 equivalent 5v 10A regulator PDF

    mosfet k 61 y1

    Abstract: IRF2807 AN-994 IRF2807L IRF2807S
    Text: PD - 91518A IRF2807S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF2807S Low-profile through-hole (IRF2807L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS(on) = 0.013Ω G ID = 82A†


    Original     		1518A IRF2807S/L IRF2807S) IRF2807L) mosfet k 61 y1 IRF2807 AN-994 IRF2807L IRF2807S PDF

    AN-994

    Abstract: IRF2807Z IRF2807ZL IRF2807ZS
    Text: PD - 95488 AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF


    Original     		IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF EIA-418. O-220AB AN-994 IRF2807Z IRF2807ZL IRF2807ZS PDF

    irf2807

    Abstract: irf2807 equivalent application of IRF2807
    Text: PD - 91517 IRF2807 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original     		IRF2807 O-220 irf2807 irf2807 equivalent application of IRF2807 PDF

    IRF2807

    Abstract: No abstract text available
    Text: PD - 91517 IRF2807 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original     		IRF2807 O-220 O-220AB IRF2807 PDF