IRF2 Search Results

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

CMD8

Contextual Info: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)

IRF2204L

Abstract: IRF2204S
Contextual Info: PD - 94502 IRF2204S IRF2204L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Electric Power Steering 14 Volts Automotive Electrical Systems D VDSS = 40V Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

IRF240

Abstract: mosfet IRF240
Contextual Info: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

igbt 50V 420A

Abstract: 94659 IRF2807Z AN-994 IRF2807ZL IRF2807ZS
Contextual Info: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

IRF250

Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
Contextual Info: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International

Contextual Info: PD - 97031A IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D RDS on = 3.8mΩ‰ G Description Specifically designed for high current, high reliability

IRF2N60

Abstract: irf*2n60 TO-252 MOSFET irf2n60251to251
Contextual Info: IRF2N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

IRF (10A) 55V

Abstract: IRF2805L IRF2805S 005-T-1 135AV
Contextual Info: PD - 94428 IRF2805S IRF2805L AUTOMOTIVE MOSFET Typical Applications ● ● ● ● HEXFET Power MOSFET Climate Control ABS Electronic Braking Windshield Wipers D VDSS = 55V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

mosfet IRF240

Abstract: IRF242 IRF240 IRF241 IRF243
Contextual Info: Standard Power MOSFETs- IRF240, IRF241, IRF242, IRF243 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 16 A and 18 A, 150 V - 200 V rDsion» - 0.18 Q and 0.22 O

IRF232

Abstract: IRF233
Contextual Info: FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF232,233 8.0 AMPERES 200,150 VOLTS

MTM40N20

Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15

IRF232

Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Contextual Info: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re

250M

Abstract: IRF240
Contextual Info: electrical characteristics T q - 2 5 ° C (unless otherwise specified) CHARACTERISTIC [ off characteristics Drain-Source Breakdown Voltage IRF230/D86DN2 (VGS = 0V, lD = 250 ,uA) IRF231/D86EM2 Zero Gate Voltage Drain Current (Vps = Max Rating, VGs = 0V, T c = 25°C)

60V Single N-Channel HEXFET Power MOSFET in a HEX

Abstract: AN-994 IRF2807L irf2807s
Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ

IRF2807

Contextual Info: PD - 91517A IRF2807 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 0.013Ω G Description ID = 82A… S Fifth Generation HEXFETs from International Rectifier

IRFP250

Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
Contextual Info: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e

IRF230

Contextual Info: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)

IRF2204S

Abstract: IRF2204L
Contextual Info: AUTOMOTIVE MOSFET Typical Applications O O O PD - 95491 IRF2204SPbF IRF2204LPbF HEXFET Power MOSFET Electric Power Steering 14 Volts Automotive Electrical Systems Lead-Free D VDSS = 40V Features O O O O O O Advanced Process Technology Ultra Low On-Resistance

AN-994

Contextual Info: PD - 97031C IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D RDS on = 3.8mΩ‰ G Description Specifically designed for high current, high reliability

IRF2804S-7P

Contextual Info: PD - 96891A AUTOMOTIVE MOSFET IRF2804S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V G RDS on = 1.6mΩ S Description

Contextual Info: PD - 95491A IRF2204SPbF IRF2204LPbF Typical Applications l Industrial Motor Drive HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features n n n n n n Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

AN-994

Contextual Info: PD - 97031C IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D RDS on = 3.8mΩ‰ G Description Specifically designed for high current, high reliability