IRF1010N Search Results

Contextual Info: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

AN-994

Abstract: IRF1010N IRF1010NS IRF530S
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω

IRF1010N

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description

marking code 43a

Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description

Contextual Info: IRF1010NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL

Contextual Info: IRF1010NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)

AN-994

Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description

marking F53

Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
Contextual Info: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†

Contextual Info: PD - 94966A IRF1010NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 11mΩ G ID = 85A‡ S Description

Contextual Info: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!

DIODE S 43a

Abstract: IRF1010N
Contextual Info: PD - 9.1372A nternational I O R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: PD - 9.1278C International IO R Rectifier IRF1010N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = Id = 0 011 £1 84A(D Description

marking 43a

Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS
Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

Contextual Info: IRF1010N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)68# I(DM) Max. (A) Pulsed I(D)48 @Temp (øC)100# IDM Max (@25øC Amb)270# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)115# Minimum Operating Temp (øC)-55õ

marking 43a

Abstract: IRF1010NL AN-994 IRF1010N IRF1010NS
Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

f101on

Abstract: GS 069 LF
Contextual Info: P D -9 1 3 7 2 B International KSR Rectifier IR F 1 0 1 0 N S /L H EXFET Pow er M O S F E T • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF1010NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

DIODE S 43a

Abstract: AN-994 IRF1010N
Contextual Info: IRF1010NS/IRF1010NL Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

marking code 43a

Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ

IRF1010N

Contextual Info: PD - 9.1278C IRF1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.011Ω G ID = 84A… S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRF1010NS IRF1010NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D 2 P ak T O -26 2 IRF1010NL IRF1010NS Description The D2Pak is a surface mount power package capable of

Contextual Info: International [^Rectifier PD 9.1278B IRF1010N PRELIMINARY HEXFET Power M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss - 55V ^ D S o n = 0.012Q lD = 72A

Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

Contextual Info: PD - 94966 IRF1010NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 11mΩ G ID = 85A‡

Contextual Info: PD - 94966 IRF1010NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 11mΩ G ID = 85A‡