IRFB4410ZPBF
Abstract: Sl4410 AN-994 mosfet irf 150
Text: PD - 97278C IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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97278C
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
IRFB4410ZPBF
Sl4410
AN-994
mosfet irf 150
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SL4410
Abstract: No abstract text available
Text: PD - 97278D IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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97278D
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
SL4410
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irf 48v mosfet
Abstract: AN-994 IRFB4410ZPBF
Text: PD - 97278D IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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97278D
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
irf 48v mosfet
AN-994
IRFB4410ZPBF
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AN-994
Abstract: No abstract text available
Text: PD - 97278B IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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97278B
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
Maximum73)
AN-994
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MOSFET IRF 941
Abstract: No abstract text available
Text: PD - 97278A IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits
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7278A
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
MOSFET IRF 941
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IRF 450 MOSFET
Abstract: AN-994 IRFB4410Z IRFB4410ZPBF irfs4410z marking 58A
Text: PD - 97278 IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits VDSS RDS on typ.
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IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
EIA-418.
IRF 450 MOSFET
AN-994
IRFB4410Z
IRFB4410ZPBF
irfs4410z
marking 58A
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TO-247AC Package
Abstract: IRFP064V irf 2030
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
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IRFP064V
O-247
TO-247AC Package
IRFP064V
irf 2030
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irf 2030 n
Abstract: irf 2030 IRF 545 IRFP064V
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
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IRFP064V
O-247
O-247AC
irf 2030 n
irf 2030
IRF 545
IRFP064V
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IRF 042
Abstract: irf 540 mosfet IRL3803 IRLI3803
Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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1320B
IRLI3803
O-220
IRF 042
irf 540 mosfet
IRL3803
IRLI3803
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IRFIZ46N
Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ46N
O-220
IRFIZ46N
IRFZ46N
MOSFET IRF 630
IRFZ46N equivalent
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MOSFET IRF 570
Abstract: 40V 14A DPAK 950.83
Text: PD- 95083 IRLR/U2703PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.045Ω
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IRLR/U2703PbF
IRLR2703)
IRLU2703)
O-252AA)
EIA-481
EIA-541.
EIA-481.
MOSFET IRF 570
40V 14A DPAK
950.83
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IRFIZ46N
Abstract: IRFZ46N IRFZ46N equivalent irf 480 IRF 1040
Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ46N
O-220
IRFIZ46N
IRFZ46N
IRFZ46N equivalent
irf 480
IRF 1040
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IRF 850 mosfet
Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF
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OCR Scan
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O-220
IR9523
IRF9522
IRF9513
IRF9511
IRF9512
IRF9510
IRF9623
IRF9621
IRF9622
IRF 850 mosfet
MOSFET IRF 635
MOSFET IRF 630
MOSFET IRF 713
IRF N-Channel Power MOSFETs
IRF 740 N
IRF 840 MOSFET
IRF 450 MOSFET
P Channel Power MOSFET IRF
irf 540 mosfet
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IRF9120
Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET
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OCR Scan
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IRF9120/912110122/9123
IRFP9120/9121
IRF9520/9521
D0054DE
IRF/IRFP9120,
IRF9520
IRF/IRFP9121,
IRF9521
IRF/IRFP9122,
IRF9522
IRF9120
IRFP9120
IRF9120 mosfet
IRF9121
IRF 9520
IRF 9120
IRF912213
IRF 9122
IRFP9121
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F230
Abstract: IRFF230 IRFF231
Text: FUT FIELD EFFECT POWER TRANSISTOR IRFF230.231 5.5 AMPERES 200,150 VOLTS RDS ON = 0.4 il Prelim inary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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OCR Scan
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-IRFF231
F230
IRFF230
IRFF231
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1RFP9240
Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
Text: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number
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OCR Scan
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PDF
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IRF9130/9131/9132/9133
IRFP9130/9131
IRF9530/9531Z9532/9533
UUU54DS
7Tti4145
IRF/IRFP9130,
IRF9530
-100V
IRF/IRFP9131,
IRF9531
1RFP9240
irfp 9640
1RF9540
l 9143
1rfp9140
L 9141
1RF9240
IRF 409
IRFP9I40
IRF95XX
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4N50
Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB
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OCR Scan
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PDF
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34tclt
0e7117
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
t-39-11
O-22QAB
IRF430
IRF431
IRF432
IRF433
4N50
IRF830
irf4321
MTP4N45
IRF430
IRF 5054
MTP4N50
MTM4N50
MK48Z02B-20
IRF431
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irf4321
Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
Text: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB
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OCR Scan
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PDF
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IRF430-433/IRF830-833
MTM/MTP4N45/4N50
T-39-11
O-204AA
O-22QAB
IRF430
IRF431
IRF432
IRF433
MTM4N45
irf4321
4N50
MTM4N50
IRF830
MTP4N50
irf4304
IRF432
IRF430
IRF431
IRF433
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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OCR Scan
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PDF
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IRF9140
IRF9230
IRF9240
irf440
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IRF450R
Abstract: F450 RF-45
Text: £S HARRIS IR f 4 5 0 /4 5 1 /4 5 2 /4 5 3 IR F 4 5 0 R /4 5 1 R /4 5 2 R /4 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features T O -2 0 4 A A • 11A and 13A, 450V - 500V • ros on = 0 .4 i! and 0 .5 fi • Single Pulse Avalanche Energy Rated*
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OCR Scan
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PDF
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IRF450,
IRF451,
IRF452,
IRF453
IRF450R,
IRF451R,
IRF452R
IRF453R
RE14b.
IRF450R
F450
RF-45
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IRF series
Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs
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OCR Scan
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PDF
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f840
Abstract: IRF842R
Text: 3 H A R R IS IR F840/841/842/843 IRF840R/841R/842R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 7A and 8A, 450V - 500V TOP VIEW • rDs on) = 0 .8 5H and 1.1 fl DRAIN (FLANGE) • Single Pulse Avalanche Energy Rated*
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OCR Scan
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PDF
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F840/841/8
IRF840R/841R/842R/843R
IRF840,
IRF841,
IRF842,
IRF843
IRF840R,
IRF841R,
IRF842R
IRF843R
f840
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IRF820
Abstract: P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET IRF821 R 823 motorola IRF n CHANNEL MOSFET
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as sw itching regulators, converters, solenoid
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OCR Scan
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PDF
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IRF820
IRF821
IRF823
Gate-SourcF821,
IRF823
IRF820
IRF820,
P Channel Power MOSFET IRF
IRF 511 MOSfet
IRF P CHANNEL MOSFET
R 823 motorola
IRF n CHANNEL MOSFET
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IRF830
Abstract: IRF 450 MOSFET IRF831 LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF830 IRF831 IRF832 IRF833 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid
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OCR Scan
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PDF
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IRF830
IRF831
IRF832
IRF833
IRF831.
IRF 450 MOSFET
LG diode 831
transistor irf830
TRANSISTOR mosfet IRF830
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