IRF 250V 100A Search Results

IRF Power MOSFET code marking

Abstract: EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC
Contextual Info: PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRF Power MOSFET code marking

Abstract: IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076B IRFR430APbF IRFU430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

Contextual Info: IRF614 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 .0 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

IRF 870

Abstract: mosfet IRF 870 IRFR9214 IRFU9214
Contextual Info: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S

EIA-541

Abstract: IRFR420A IRFU120 IRFU420A R120 U120 U420
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple

Contextual Info: IRF614A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 .0 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

AN-1001

Abstract: IRFR420A EIA-541 IRFU120 IRFU420A R120 U120
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple

Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple

Contextual Info: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S

IRF MOSFET 100A 200v

Abstract: IRF MOSFET driver IRF 250V 100A IRf 48 MOSFET MOSFET 150 N IRF IRF 100A MOSFET IRF power mosfet IRF soc 8a mosfet irf 150
Contextual Info: IRFW/I614A A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^D S o n = ♦ Lower Input Capacitance _Q ♦ Improved Gate Charge CO c\i II ♦ Rugged Gate Oxide Technology 250 V 2.0 a A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

IRF 870

Abstract: HEXFET Power MOSFET P-Channel IRFR9214 IRFU9214 IRF MOSFET 260
Contextual Info: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S

MOSFET IRF 570

Abstract: marking 31A 035H IRFP31N50L IRFPE30 PE30 irf 2030
Contextual Info: PD - 94081A IRFP31N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 0.15Ω 500V Features and Benefits

IRF 810

Abstract: IRF 545 ac power control applications 400v 16a IRF 640 mosfet 035H IRFP17N50L IRFPE30 PE30 t 125 16a 250v 99AF
Contextual Info: PD - 94322A IRFP17N50L SMPS MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications HEXFET Power MOSFET VDSS RDS on typ. Trr typ. ID 0.28Ω 500V Features and Benefits

MOSFET IRF 940

Abstract: IRF 50A MOSFET IRF 635 4.5V TO 100V INPUT REGULATOR
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076 IRFR430APbF IRFU430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

all transistor IRF 310

Abstract: transistor irf 645 irf mosfet 12A 600V MOSFET IRF 940 MOSFET IRF 635 MOSFET IRF 380 TRANSISTOR MOSFET IRF all transistor IRF 312 IRF 730 TRANSISTOR MOSFET IRF VDs 600v
Contextual Info: SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

MOSFET IRF 1018

Abstract: DAT 1018 P irf 1490 DAT 1018
Contextual Info: IRF840APbF Static @ TJ = 25°C unless otherwise specified Parameter Min. Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage

IRF 810

Abstract: 95353A IRFU12N25DPBF IRFR12N25DPBF
Contextual Info: PD - 95353A IRFR12N25DPbF IRFU12N25DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRF 810

Abstract: Avalanche diodes U120 200V AUTOMOTIVE MOSFET AN1001 EIA-541 IRFR120 IRFR12N25D IRFU120 IRFU12N25D
Contextual Info: PD - 95353A IRFR12N25DPbF IRFU12N25DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

transistor IRF 610

Abstract: transistor irf 647 TO-220aB 11A TO-220aB DIODE 11A
Contextual Info: PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

035H

Abstract: IRFPE30 PE30
Contextual Info: PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

SEC IRF 640

Contextual Info: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRFS440A Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

sec irf840

Abstract: IRF840 MOSFET SEC IRF 640
Contextual Info: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

HA1190

Contextual Info: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V