IRF 1640
Abstract: GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC
Text: • M fr Qty/Note 7 A0 D3 M5 000035fl ITS ■ Part Num ber M fr Qty/Note Part Num ber Mfr SM C 6658 GAL20V8QS-10LV! NSC 1995 HA1-2541-7 H AR 460 SMC 13390 GAL20V8QS-15LNC NSC 15169 HA1-2541/883 H AR 387 SMC 401 GAL20V8QS-15LVC NSC 1031 HA1-2655-5 H AR 210
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OCR Scan
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FDC92C36BP
FDC92C36P
FDC92C38BP
FDC92C33BT
FDC92C39BUP
FDC92C39BTBI
FDC92C39BTCD
FDC92C39BTLJP
FDC92C39BTP
FDC92C39LJP
IRF 1640
GD4049B
IRF 1640 G
GAL16V8-20LNC
gal22cv10
HA2-2725-5
HA2-2655-5
HA2-2650-2
irf 2030
GAL22CV10-10LVC
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PDF
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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OCR Scan
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IRF9140
IRF9230
IRF9240
irf440
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PDF
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bwh molded wirewound resistor
Abstract: marking S0M IRC SPH bwh series resistor RC32/RC42
Text: GENERAL-PURPOSE FAILSAFE MOLDED WIREWOUND RESISTOR SPH/SPF • • • • • ■ SERIES* Drop-in replacement for BWH/BWF 2 watt rated with 1 watt dimensions ±5%, ±10% tolerance 0.5 ohm to 2400 ohms TCR's as low as ±150 ppm/°C std custom TC's available
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OCR Scan
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RS-344
WIIL-R-11
RC32/RC42
2400U
S7242
bwh molded wirewound resistor
marking S0M
IRC SPH
bwh series resistor
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PDF
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irf 940
Abstract: IRF 470 IRF 860 irf 560 irf 480 irf 680 IRF 47 irf 145 a IRf 425 Application of irf 720
Text: IRF Vishay Dale Inductors, Epoxy Conformal Coated, Uniform Roll Coated, Axial Leaded FEATURES • Flame-retardant coating ELECTRICAL SPECIFICATIONS • Color band identification Inductance Tolerance: ± 5 %, ± 10 %, ± 20 % Other tolerances available on request
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Original
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MIL-STD-202,
RS/296
2002/95/EC
11-Mar-11
irf 940
IRF 470
IRF 860
irf 560
irf 480
irf 680
IRF 47
irf 145 a
IRf 425
Application of irf 720
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PDF
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irf 940
Abstract: irf 540 irf 560
Text: IRF www.vishay.com Vishay Dale Inductors, Epoxy Conformal Coated, Uniform Roll Coated, Axial Leaded FEATURES • Flame-retardant coating • Color band identification ELECTRICAL SPECIFICATIONS • Uniform coating is excellent for automatic insertion Inductance Tolerance: ± 5 %, ± 10 %, ± 20 %
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Original
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MIL-STD-202,
RS/296
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irf 940
irf 540
irf 560
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PDF
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A1060
Abstract: No abstract text available
Text: IRF www.vishay.com Vishay Dale Inductors, Epoxy Conformal Coated, Uniform Roll Coated, Axial Leaded FEATURES • Flame-retardant coating • Color band identification ELECTRICAL SPECIFICATIONS • Uniform coating is excellent for automatic insertion Inductance Tolerance: ± 5 %, ± 10 %, ± 20 %
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Original
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RS/296
MIL-STD-202,
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
A1060
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PDF
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irf 940
Abstract: irf 560 irf 145 a irf 460 transistor IRF 630 irf 680 irf 630 and related IRF 830 equivalent IRF 470
Text: IRF Vishay Dale Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES • Flame-retardant coating and color band identification • Uniform coating is excellent for automatic insertion • Available in bulk, ammo and reel pack per EIA RoHS COMPLIANT
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Original
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RS/296
MIL-STD-202,
08-Apr-05
irf 940
irf 560
irf 145 a
irf 460
transistor IRF 630
irf 680
irf 630 and related
IRF 830 equivalent
IRF 470
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PDF
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IRF 470
Abstract: irf 940 irf 560 irf 480 IRF 830 equivalent
Text: IRF Vishay Dale Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES • Flame-retardant coating and color band identification • Uniform coating is excellent for automatic insertion • Available in bulk, ammo and reel pack per EIA RoHS COMPLIANT
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Original
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RS/296
MIL-STD-202,
18-Jul-08
IRF 470
irf 940
irf 560
irf 480
IRF 830 equivalent
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PDF
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GOBI
Abstract: 073tf-0
Text: . D RA W IN G M A D E LOC _ ^ C M IN T H I R D A N G L E P R O J E C T I O N 1965" by A M P Incorporated, Harrisburg, Pa, R E V IS i O N S ¡ C o p y ri g h t LTR A l l In t e r n a t i o n a l R i g h t s R e s e r v e d . A M P In c o r p o r a t e d
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OCR Scan
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-60s-
00003d
GOBI
073tf-0
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PDF
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800w class d circuit diagram schematics
Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.
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TO-247AC Package
Abstract: IRFP064V irf 2030
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
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IRFP064V
O-247
TO-247AC Package
IRFP064V
irf 2030
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PDF
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2SC1380
Abstract: transistor c1380 2SC13 C1380 2SC1380A transistor qz 2SC1380A-BL z13x Produced by Perfect Crystal Device Technology LTSTS
Text: SILICON O O o o NPN EPITAXIAL TRANSISTOR PCT PROCESS I It I 1 ffl iftft&ittHA & £ ! * £ * # « • £ (26C1380A) High Frequency Amplifier Applications INDUSTRIAL APPLICATIONS Low Noise Amplifier Applications (2SC1380A) «StŒtt : U n i t i n mm 0&8MAX.
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OCR Scan
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2SC1380A)
2SC1380A
100Hz)
-I100M
2SC1380
transistor c1380
2SC13
C1380
2SC1380A
transistor qz
2SC1380A-BL
z13x
Produced by Perfect Crystal Device Technology
LTSTS
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PDF
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MOSFET IRF 570
Abstract: marking 31A 035H IRFP31N50L IRFPE30 PE30 irf 2030
Text: PD - 94081A IRFP31N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 0.15Ω 500V Features and Benefits
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Original
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4081A
IRFP31N50L
170ns
O-247AC
O-247AC
MOSFET IRF 570
marking 31A
035H
IRFP31N50L
IRFPE30
PE30
irf 2030
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PDF
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IRF 042
Abstract: irf 540 mosfet IRL3803 IRLI3803
Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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Original
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1320B
IRLI3803
O-220
IRF 042
irf 540 mosfet
IRL3803
IRLI3803
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PDF
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W922
Abstract: IRFIZ24E IRFZ24N EV700 irf*24n
Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24E
O-220
W922
IRFIZ24E
IRFZ24N
EV700
irf*24n
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PDF
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IRFIZ34N
Abstract: IRFZ34N MOSFET 150 N IRF
Text: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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IRFIZ34N
O-220
IRFIZ34N
IRFZ34N
MOSFET 150 N IRF
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PDF
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IRFIZ46N
Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier
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Original
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IRFIZ46N
O-220
IRFIZ46N
IRFZ46N
MOSFET IRF 630
IRFZ46N equivalent
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PDF
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schematic diagram inverter 12v to 24v 1000w
Abstract: 1000w class d circuit diagram schematics IRF 9234 schematic diagram inverter 12v to 24v 30a 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics laptop LCD inverter SCHEMATIC 12vdc to 230vac mosfet inverter 700w audio amplifier circuit diagram schematic diagram inverter 2000w
Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 1 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.
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Original
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PDF
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irf 44 n
Abstract: 1329B IRLIZ34N IRLZ34N
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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Original
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1329B
IRLIZ34N
O-220
irf 44 n
1329B
IRLIZ34N
IRLZ34N
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PDF
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IRFIZ24N
Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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Original
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IRFIZ24N
O-220
IRFIZ24N
1501a
IRFZ24N
irf 480
irf 044 mosfet
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PDF
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1501a
Abstract: IRFZ24N IRFIZ24N irf 480
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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Original
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IRFIZ24N
O-220
1501a
IRFZ24N
IRFIZ24N
irf 480
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PDF
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Equivalent IRF 44
Abstract: ultra low igss pA IRL2505 IRLI2505
Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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Original
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IRLI2505
O-220
Equivalent IRF 44
ultra low igss pA
IRL2505
IRLI2505
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PDF
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EMW3165
Abstract: EMW3165-P
Text: 上海庆科信息技术有限公司 产品文档 QK-QW-001 DS0007E_EMW3165 版本：1.0 版 编制 / 日期：李旸 ； 2015 年 01 月 20 日 会审/ 日期：/ ； 年 / 审核 / 日期：沈建华任建宏 ； 2015 年 01 月 26 日 批准 / 日期：王永虹
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Original
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QK-QW-001
DS0007E
EMW3165
EMW3165
EMW3165-P
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PDF
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Equivalent IRF 44
Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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Original
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1329B
IRLIZ34N
O-220
Equivalent IRF 44
IRLIZ34N
1329B
IRLZ34N
e4019
mosfet irf 150
irliz34
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PDF
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