uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
|
Original
|
PDF
|
14-Apr-04
uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
|
BPW21R
Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al
|
Original
|
PDF
|
|
TSAL6200
Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si
|
Original
|
PDF
|
|
BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
|
Original
|
PDF
|
|
uv phototransistor
Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200
|
Original
|
PDF
|
|
EPS-4430
Abstract: 4430 4431 EPS-4431 EPS-4432
Text: ELEKON Phtodiode EPS - 4430 Photodiode commonly referred to as 'sidelooker'. Features high output power IRED and high speed and wide angular response. Available in 2 spectral sensitive ranges. Note: Sidelooking plastic package with daylight. Applications:
|
Original
|
PDF
|
000Lux
EPS-4430
EPS-4431
EPS-4432*
EPS-4430
4430
4431
EPS-4431
EPS-4432
|
hp 940
Abstract: HP-5FR3
Text: Photo diodes KODENSHI HP-5FR4・HP-5FR3 DIMENSIONS Unit : mm The HP-5FR3, and 5FR4 are high-output, high-speed silicon photodiodes mounted in sidelooking plastic packages with daylight filter. FEATURES •High-output power for IRED •High-speed response
|
Original
|
PDF
|
000lx
2856K
hp 940
HP-5FR3
|
"tilt sensor"
Abstract: SUN POSITION SENSOR tilt sensor SG-302
Text: Tilt Sensor KODENSHI SG-302 DIMENSIONS Unit : mm The SG-302 reflective sensor for paper sensing combine high-output GaAs IRED with high sensitivity photodiode. It is most applicable to tilt sensor. FEATURES •High performance •High-speed response APPLICATIONS
|
Original
|
PDF
|
SG-302
SG-302
"tilt sensor"
SUN POSITION SENSOR
tilt sensor
|
Untitled
Abstract: No abstract text available
Text: TFBS6614 VISHAY Vishay Semiconductors Lowest Profile 4 Mbit/s FIR Infrared Transceiver Module Description The Vishay TFBS6614 is the lowest profile (2.7 mm) 4 Mbit/s Infrared Data Transceiver module available. A PIN photodiode, an infrared emitter (IRED) and a
|
Original
|
PDF
|
TFBS6614
TFBS6614
D-74025
25-Jun-04
|
MID-85H1C
Abstract: No abstract text available
Text: SIDE LOOK PACKAGE PIN PHOTODIODE MID-85H1C Description Package Dimensions The MID-85H1C is a photodiode mounted in special 5.00 .200 dark plastic package and suitable for the IRED Unit: mm ( inches ) (850nm/880nm) Type. 6.60 (.260) 4.00 (.160) 4.00 (.160)
|
Original
|
PDF
|
MID-85H1C
MID-85H1C
850nm/880nm)
850nm/880nm
00MIN.
|
Untitled
Abstract: No abstract text available
Text: CLE390 Clairex 850nm IRED with Photodiode Monitored Output Technologies, Inc. July, 2006 0.156 3.96 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.100 (2.54) dia. 0.50(25.4) (12.7)min. min. 1.00 0.215 (5.46) 0.205 (5.21) PHOTODIODE CATHODE ANODE COMMON 0.190 (4.83)
|
Original
|
PDF
|
CLE390
850nm
CLE390
100mA
200mW
|
MID-73A1C
Abstract: mid ir photodiode
Text: SIDE-LOOK PACKAGE PIN PHOTODIODE MID-73A1C Description Package Dimensions Unit : mm inches The MID-73A1C is a photodiode mounted in special dark plastic package and suitable for the IRED (940nm) Type. 3.05 (.120) 7.5±0.12 (.295 3.00+0.120 (.118±.005)
|
Original
|
PDF
|
MID-73A1C
MID-73A1C
940nm)
00MIN.
mid ir photodiode
|
"tilt sensor"
Abstract: GaAs photodiode 10G optical devices in dvd pick-up "laser picK up" KU168 laser pickup tilt sensor 6H010
Text: KU168 Tilt Sensor Features Function Product features Disk Tilt Sensor Analog Output ・Outer Dimension : 7 x 3 x 5mm (L x W x H) (The pin for positioning is excluded.) ・Integrated IRED and Photodiode ・Small Package ・No lead package ・RoHS compliant
|
Original
|
PDF
|
KU168
"tilt sensor"
GaAs photodiode 10G
optical devices in dvd pick-up
"laser picK up"
KU168
laser pickup
tilt sensor
6H010
|
Untitled
Abstract: No abstract text available
Text: TFBS6614 VISHAY Vishay Semiconductors Lowest Profile 4 Mbit/s FIR Infrared Transceiver Module Description The Vishay TFBS6614 is the lowest profile (2.7 mm) 4 Mbit/s Infrared Data Transceiver module available. A PIN photodiode, an infrared emitter (IRED) and a
|
Original
|
PDF
|
TFBS6614
TFBS6614
D-74025
01-Dec-03
|
|
|
irtx transmitter led OPERATING VOLTAGE 5 V
Abstract: TFBS6614 TFBS6614-TR3
Text: TFBS6614 VISHAY Vishay Semiconductors Lowest Profile 4 Mbits/s FIR Infrared Transceiver Module Description The Vishay TFBS6614 is the lowest profile (2.7 mm) 4 Mbit/s Infrared Data Transceiver module available. A PIN photodiode, an infrared emitter (IRED) and a
|
Original
|
PDF
|
TFBS6614
TFBS6614
D-74025
28-Oct-03
irtx transmitter led OPERATING VOLTAGE 5 V
TFBS6614-TR3
|
Untitled
Abstract: No abstract text available
Text: OSP-9FR2 PHOTODIODE General Description The OSP-9FR2 is a high output , high speed photodiode mounted in special dark plastic package and suitable for the IRED 900mm type. Features • Lens Appearance : Black • Wide angular response • High speed response
|
Original
|
PDF
|
900mm)
200Hrs
IR940nm
|
MID-85A1C
Abstract: No abstract text available
Text: SIDE LOOK PACKAGE PIN PHOTODIODE MID-85A1C Description Package Dimensions The MID-85A1C is a photodiode mounted in special dark Unit: mm inches 5.00 (.200 plastic package and suitable for the IRED (940nm) Type. 6.60 (.260) 4.00 (.160) 4.00 (.160) 22.60 TYP.
|
Original
|
PDF
|
MID-85A1C
MID-85A1C
940nm)
00MIN.
|
Untitled
Abstract: No abstract text available
Text: Photo diodes KODENSHI HP-2FR4 DIMENSIONS Unit : mm The HP-2FR4 is a high-speed silicon photodiode mounted in a sidelooking plastic package with daylight filter(IR-88). The lensed package permits high-output. FEATURES •High-output power for IRED •High-speed response
|
Original
|
PDF
|
IR-88)
000lx
2856K
|
PIN photodiode 850nm
Abstract: PIN photodiode sensitivity 850nm 850nm MID-54H19
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54H19 Package Dimensions The MID-54H19 is a photodiode mounted in special Unit : mm inches dark end look plastic package and suitable for the ψ5.05 (.200) IRED (850nm/880nm) type. 5.47 (.215) 7.62 (.300)
|
Original
|
PDF
|
MID-54H19
MID-54H19
850nm/880nm)
40MIN.
50TYP.
00MIN.
PIN photodiode 850nm
PIN photodiode sensitivity 850nm
850nm
|
MID-73H1C
Abstract: mid ir photodiode
Text: SIDE-LOOK PACKAGE PIN PHOTODIODE MID-73H1C Description Package Dimensions Unit : mm inches The MID-73H1C is a photodiode mounted in special dark plastic package and suitable for the IRED (850nm / 880nm) Type. 3.05 (.120) 7.5±0.12 (.295 3.00+0.120 (.118±.005)
|
Original
|
PDF
|
MID-73H1C
MID-73H1C
850nm
880nm)
00MIN.
mid ir photodiode
|
Untitled
Abstract: No abstract text available
Text: KU168 Tilt Sensor Features Function Product features Disk Tilt Sensor Analog Output ・Outer Dimension : 7 x 3 x 5mm (L x W x H) (The pin for positioning is excluded.) ・Integrated IRED and Photodiode ・Small Package ・No lead package Die materials (Emitter)
|
Original
|
PDF
|
KU168
|
mid ir photodiode
Abstract: IR led 940nm MID-56A19
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-56A19 Package Dimensions The MID-56A19 is a photodiode mounted in Unit: mm inches ψ5.05 (.200) special dark end look plastic package and suitable for the IRED 940nm type. 5.47 (.215) 7.62 (.300) 5.90 (.230)
|
Original
|
PDF
|
MID-56A19
MID-56A19
940nm
00MIN.
mid ir photodiode
IR led 940nm
|
optomechanical mouse encoder
Abstract: Optical encoder mouse encoder MOUSE ENCODER power detector wheel mouse sensor mouse wheel encoder basic optical mouse basic optical mouse 5v 100ma mouse Phototransistor shadow detector circuits motion DETECTOR flow chart
Text: Application Note Optoelectronics for Mouse and Shaft Encoder Applications Figure 1 Figure 3 IRED/PHOTODIODE CIRCUIT The mouse, a small hand-held device, usually with two or three buttons on top, is by far the most commonly used alternative input device for personal computers. As
|
Original
|
PDF
|
|
HOA0901-11
Abstract: HOA0901-12 HOA0902-11 quadrature mouse phototransistor 2N2222 hfe ir slotted wheel encoder mouse joystick circuit how an INFRARED MOTION DETECTOR works shadow detector circuits HOA0901
Text: Application Notes Application Note Light Emitting Diode IRED Power Output Specifications A method of specifying power output is to measure the power radiated into a cone whose apex is at the IRED. This cone is the solid angle over which the power output
|
OCR Scan
|
PDF
|
|
