ferretec
Abstract: YIG Bandpass Filters teledyne yig oscillator ALQ-172 ferretrac F1333 SMPL26MOTOLB pioneer tuner yig oscillator FT1117
Text: 9 'FILTERS the complete microwave solution YIG Product Introduction History Ferretec was incorporated in the State of California in October 1981. Since its first shipments in early 1983, Ferretec YIG products, part of Teledyne Family serves the microwave community with state-ofthe-art tunable YIG filters, oscillators,
|
Original
|
06-S-1942
ferretec
YIG Bandpass Filters
teledyne yig oscillator
ALQ-172
ferretrac
F1333
SMPL26MOTOLB
pioneer tuner
yig oscillator
FT1117
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Aerospace and Defense Solutions Aerospace and Defense Solutions Table of Contents Aerospace and Defense Product Overview . . . . . . . . 3 Certifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 High Reliability Screening Capabilities . . . . . . . . . . . . 5
|
Original
|
BRO400-13B
|
PDF
|
CLF1G0035-100P
Abstract: sot1228 electromagnetic pulse jammers
Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 1 — 10 December 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
|
Original
|
CLF1G0035-100P;
CLF1G0035S-100P
CLF1G0035-100P
CLF1G0035S-100P
1G0035S-100P
sot1228
electromagnetic pulse jammers
|
PDF
|
ph 4148 zener diode detail
Abstract: sk100 TRANSISTOR REPLACEMENT equivalent transistor sl100 sl100 npn transistor sonar block diagram air conditioner schematic diagram SL100 transistor pin configuration SL100 npn transistor characteristics Cell Phone Jammers project kit SL100 pin configuration
Text: ZiLOG Design Concepts Z8 Application Ideas AN004901-0900 ZILOG WORLDWIDE HEADQUARTERS ¥ 910 E. HAMILTON AVENUE ¥ CAMPBELL, CA 95008 TELEPHONE: 408.558.8500 ¥ FAX: 408.558.8300 ¥ WWW.ZILOG.COM ZiLOG Design Concepts Z8 Application Ideas This publication is subject to replacement by a later edition. To determine whether a later edition
|
Original
|
AN004901-0900
Z86E31
Z86E40
Z86E83
Z8E001
Z8PE001
ph 4148 zener diode detail
sk100 TRANSISTOR REPLACEMENT
equivalent transistor sl100
sl100 npn transistor
sonar block diagram
air conditioner schematic diagram
SL100 transistor pin configuration
SL100 npn transistor characteristics
Cell Phone Jammers project kit
SL100 pin configuration
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
|
Original
|
CLF1G0035-100P;
CLF1G0035S-100P
CLF1G0035-100P
CLF1G0035S-100P
1G0035S-100P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
|
Original
|
CLF1G0060-10;
CLF1G0060S-10
CLF1G0060-10
CLF1G0060S-10
1G0060S-10
|
PDF
|
ATC 600F
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 3 — 27 March 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
|
Original
|
CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
ATC 600F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
|
Original
|
CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
|
Original
|
CLF1G0035S-50
CLF1G0035S-50
|
PDF
|
sot1227
Abstract: 082279 SOT1227A Model 284J 226J
Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
|
Original
|
CLF1G0060-10;
CLF1G0060S-10
CLF1G0060-10
CLF1G0060S-10
1G0060S-10
sot1227
082279
SOT1227A
Model 284J
226J
|
PDF
|
bc857b nxp
Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from
|
Original
|
CLF1G0035-50;
CLF1G0035S-50
CLF1G0035-50
CLF1G0035S-50
1G0035S-50
bc857b nxp
C5750X7S2A106M
Gan transistor
C 1972 transistor
|
PDF
|
PCE3667CT-ND
Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
|
Original
|
CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
PCE3667CT-ND
capacitor 56J pF
a 69154
SOT1227A
200V470
|
PDF
|
SOT1227A
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
|
Original
|
CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
SOT1227A
|
PDF
|
AN11130
Abstract: Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
|
Original
|
CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
AN11130
Micro-coax UT
UT-062C-18
LR12010T0200J
RL7520WT-R005-f
Micro-coax UT-062C-18
RL7520WT-R005
Z5 1512
1001G00
|
PDF
|
|
|
30221
Abstract: LR12010T0200J
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
|
Original
|
CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
30221
LR12010T0200J
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
|
Original
|
CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from
|
Original
|
CLF1G0035-50;
CLF1G0035S-50
CLF1G0035-50
CLF1G0035S-50
1G0035S-50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
|
Original
|
CLF1G0035S-100
CLF1G0035S-100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HIGH POWER 100 WATT DIRECTIONAL COUPLER APPLICATIONS • EW Systems 100 Watt TWT Power Monitor Circuits, BIT Circuits, Jammers • Test Equipment/ATE • Power Amplifier Control • Radar-Transmitter Circuits • 100 W att Miniature Stripline Design FEATURES
|
OCR Scan
|
MIL-C-39012.
|
PDF
|
impatt diode
Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Text: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz
|
OCR Scan
|
b427414
ND487C1-3R
ND487C2-00
ND487C2-3P
ND487C2-3R
ND487R1-00
ND487R1-3P
ND487R1-3R
ND487R2-00
ND487R2-3P
impatt diode
1ST23
ND487
ND8L60W1T
impatt
1ST11
ND8M30-1N
|
PDF
|
HERCULES Graphics Controller
Abstract: ARC M3D Hercules Graphics Card ega controller IBM ega registers ega monitor ltyn GC201 POM CRT MONITOR ega bios
Text: GC201 EGA / MULTI-MODE GRAPHICS CONTROLLER DESCRIPTION FEATURES • 160 pin single chip design • 100% EGA, C G A MDA and Her cules hardware & software com patible • Built in auto mode switch logic • All video modes software switchable and su p p orted on EG A type
|
OCR Scan
|
GC201
GC201
i55--
HERCULES Graphics Controller
ARC M3D
Hercules Graphics Card
ega controller
IBM ega registers
ega monitor
ltyn
POM CRT MONITOR
ega bios
|
PDF
|
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
|
OCR Scan
|
1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
|
PDF
|
TFX-72
Abstract: No abstract text available
Text: 0AVANTEK T F X -7 2L /M /H T h in -F ilm M ixer 2 to 7 G H z D o u ble Balanced FEATURES APPLICATIONS • Double Balanced • All Thin-Film Ceramic Construction • 2 to 7 GHz RF and LO Bandwidth • DC to 1.2 GHz IF Bandwidth • 6 dB Conversion Loss • Low VSWRs All Ports
|
OCR Scan
|
TFX-72
|
PDF
|
impatt diode
Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
Text: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz
|
OCR Scan
|
b427414
ND8N40W
ND8L60W-1T
ND8J80W
ND8G96W-1T
impatt diode
DIODE 5H
impatt
1ST11
d8030
ND8M30-1N
BV-1
1ST22
|
PDF
|