IR DIODE TIL Search Results

dalc mark

Abstract: DALC208SC6Y
Contextual Info: DALC208SC6Y Automotive low capacitance diode array for ESD protection Datasheet  production data Features • Protection of 4 lines ■ Peak reverse voltage: VRRM = 9 V per diode ■ Very low capacitance per diode: C < 5 pF ■ Very low leakage current: IR < 1 µA

circuit diagram for scsi to usb

Abstract: PLCDA15
Contextual Info: PLCDAQ3 PROlEK DEVICES fEngineered I—•—lir-i 1-1 r-ir-ir-ii—i « i —til i+-irM-»cs ffo r . ^ri ^ U a V n o w i e i o n f environment a n v y in rM ir i ^ a solutions the transient |R ] thru PLCDA24 HIGH SPEED BIDIRECTIONAL TVS DIODE ARRAY • •

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Contextual Info: MEASUREMENT OF OPTOELECTRONIC DEVICE PARAMETERS IRED PA R A M ETER S M easurem ent o f IR E D param eters is relatively straight forw ard, since the electrical p aram eters are those o f a diode. T hey can be m easured on test equipm ent used to m easure diode param eters, from the

74LS115

Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Contextual Info: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con­ necting first darlington emitter to output should have series resistor. LS33 5-25

telefunken 8010

Abstract: P 600 I 1903
Contextual Info: TELEFUNKEN ELECTRONIC fl'JEOOSb 00D76b3 3 • AL6G RÔD D TCZS 8000 TCZS 8010 TTIlOLilFIliiMlCSiKl electronic T - < //- 7 / Creative Technologies Matchable Pairs - Emitter and Detector Construction: Emitter: Detector. Applications: GaAs IR Emitting Diode Integrated Optoelectronic Circuit with Schmitt-Trigger Logic Output

Contextual Info: 1SS293 TO SHIBA TO SHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fuA (Max.) Small Package • • • = 25°C) CHARACTERISTIC

Contextual Info: 'E t ir j'y v V ? * * - - K 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S30VTQ/S30VTAD 800V 30A Unit • mm i pap ^ t : A 0 r> < H & l i ' - K J g ^ d lM A X X j il . e ) V t o • S30V T A type has solid wire lead term inals. 11MAXX ^ 1 .6 )

Contextual Info: 1SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 • • • 1.25 ± 0.1

Contextual Info: 1SS293 TO SHIBA TO SHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5fuA (Max.) Small Package 0.55M A X CTl 1.27 1.27

Contextual Info: 1SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 • • • 1.25 ± 0.1

Contextual Info: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

Contextual Info: T O SH IB A 1SS348 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS348 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING • • • + 0 .5 2 .5 - 0 .3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package

Contextual Info: 1SS319 T O SH IB A TO SHIBA DIODE 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 2.9 - 0 .3 • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package

Contextual Info: 1SS349 TO SHIBA TO SHIBA DIODE 1 SS349 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/j A (Max.) Small Package : SC-59 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Bridge Diode Dual In-Line Package OUTLINE DIMENSIONS S1NBB80 800V 1A 43 f i • / M Ü D IP /W ir - S ; •S?F^PH3.4mrn^SSffi RATINGS # îf ë $ ÎÎt ^ 5 È Î& Absolute Maximum Ratings fêÂw&v'ilrê-T /= 2 5 'C 1

Contextual Info: B /4 X J U y !f Low Noise Bridge Single In-line Package Bridge Diode •*W fN -äsH OUTLINE DIMENSIONS LN4SB60 TO 600V 4A 45 £1 •U L1S W UL File No,E 1 4 2 4 2 2 •S IP K 'j/ir-y • S I fsm RATINGS Absolute Maximum Ratings 1 a Item Storage Temperature

Til 160

Abstract: TIL111 TIL116 d1607 TIL114 TIL117 752a5
Contextual Info: TIL111, TIL114. TIL116, TIL117 OPTOCOUPLERS SOOS040 D1607, N O V E M B E R 1 9 7 3 -R E V IS E O FEBR U AR Y 19S3 C O M P A T IB L E W IT H S T A N D A R D T T L IN T E G R A T E D C IR C U IT S • G allium Arsenide Diode Infrared Source O ptically Coupled

DIODE N7

Abstract: B20s
Contextual Info: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Bridge Diode Dual In-Line Package •*WfN-äsH OUTLINE DIMENSIONS S1YB 600V 0.4A 43 f i • /j\iU D ip y v " ^ ir - y • B Ä ttic ffin s fllS tt « a ± * n îE o w c B , m e m m *z m m < rc -£ u MMfàM RATINGS

T1L111

Abstract: D1607 TIL117 Tll111 TIL111 TIL116 L111 TIL114 UL117 optocouplers from texas instruments
Contextual Info: m i t t. TILI 14. TIL116, TIL117 OPTOCOUPLERS D 1G 07, N O V E M B E R 1 9 7 3 - R E V I S E D F E B R U A R Y 1983 CO M PA TIBLE WITH STA N D A R D T T L IN T E G R A T E D C IR C U IT S • Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor

Contextual Info: INFRARED EMITTING DIODE GaALAs AL1F1 A L - 1 F H i, DIMENSIONS (Unit:mm) h '£ f t f c « t B r t G a A iA s t - K T to k *> 6 ^ 7 . The A L-1F1 is a high-power G a A £ A s IR E D mounted in a clear p lastic package, whose low profile perm its very accurate centering of light source. Designed for autom a­

FUH -29A001B

Abstract: FUH -29A001F GVC2013PA SVC201SPA
Contextual Info: PutiHpig FKinHnr B j g H j l SVC201SPA, 201 y D u llu ie d J u n c tio n s Tvpw 5 il llç u ii f r o d o Varactor Diode {IOC AP for FM Receiver Electronic Tuning / / Features Package Dimensions Itic 5 V C 2 0 IÍP A . 2 0 ! Y aal vlii «hiciücs a ttu tii j m ieli <m s ir ^ im e ftb ric fljò f) * i ' l i hm mìplim

optointerrupter

Contextual Info: Optointerrupter Specifications H23L1 Matched Emitter-Detector Pair GaAs Infrared Emitting Diode and Microprocessor Compatible Schmitt Trigger T h e H23L.1 is a m a tc h e d e m itte r-d e te c to r p a ir w h ic h c o n sis ts o f a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e a n d a h ig h -s p e e d

AN-994

Abstract: IRLR3303 IRLU3303
Contextual Info: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-98 IRLR3303 HEXFET D-Pak PD - 91316F IRLR/U3303 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive